Strong correlations elucidate the electronic structure and phase diagram of LaAlO3/SrTiO3 interface
Abstract
The interface between the two band insulators SrTiO3 and LaAlO3 has the unexpected properties of a two-dimensional electron gas. It is even superconducting with a transition temperature, Tc, that can be tuned using gate bias Vg, which controls the number of electrons added or removed from the interface. The gate bias–temperature (Vg, T) phase diagram is characterized by a dome-shaped region where superconductivity occurs, that is, Tc has a non-monotonic dependence on Vg, similar to many unconventional superconductors. Here, we report, the frequency of the quantum resistance-oscillations versus inverse magnetic field for various Vg. This frequency follows the same non-monotonic behaviour as Tc; a similar trend is seen in the low field limit of the Hall coefficient. We theoretically show that electronic correlations result in a non-monotonic population of the mobile band, which can account for the experimental behaviour of the normal transport properties and the superconducting dome.
- Authors:
-
- Tel-Aviv Univ. (Israel). Raymond and Beverly Sackler School of Physics and Astronomy
- Publication Date:
- Research Org.:
- Tel-Aviv Univ. (Israel)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1624003
- Grant/Contract Number:
- FG02-00ER41132
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nature Communications
- Additional Journal Information:
- Journal Volume: 6; Journal Issue: 1; Journal ID: ISSN 2041-1723
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Science & Technology - Other Topics
Citation Formats
Maniv, E., Shalom, M. Ben, Ron, A., Mograbi, M., Palevski, A., Goldstein, M., and Dagan, Y. Strong correlations elucidate the electronic structure and phase diagram of LaAlO3/SrTiO3 interface. United States: N. p., 2015.
Web. doi:10.1038/ncomms9239.
Maniv, E., Shalom, M. Ben, Ron, A., Mograbi, M., Palevski, A., Goldstein, M., & Dagan, Y. Strong correlations elucidate the electronic structure and phase diagram of LaAlO3/SrTiO3 interface. United States. https://doi.org/10.1038/ncomms9239
Maniv, E., Shalom, M. Ben, Ron, A., Mograbi, M., Palevski, A., Goldstein, M., and Dagan, Y. Fri .
"Strong correlations elucidate the electronic structure and phase diagram of LaAlO3/SrTiO3 interface". United States. https://doi.org/10.1038/ncomms9239. https://www.osti.gov/servlets/purl/1624003.
@article{osti_1624003,
title = {Strong correlations elucidate the electronic structure and phase diagram of LaAlO3/SrTiO3 interface},
author = {Maniv, E. and Shalom, M. Ben and Ron, A. and Mograbi, M. and Palevski, A. and Goldstein, M. and Dagan, Y.},
abstractNote = {The interface between the two band insulators SrTiO3 and LaAlO3 has the unexpected properties of a two-dimensional electron gas. It is even superconducting with a transition temperature, Tc, that can be tuned using gate bias Vg, which controls the number of electrons added or removed from the interface. The gate bias–temperature (Vg, T) phase diagram is characterized by a dome-shaped region where superconductivity occurs, that is, Tc has a non-monotonic dependence on Vg, similar to many unconventional superconductors. Here, we report, the frequency of the quantum resistance-oscillations versus inverse magnetic field for various Vg. This frequency follows the same non-monotonic behaviour as Tc; a similar trend is seen in the low field limit of the Hall coefficient. We theoretically show that electronic correlations result in a non-monotonic population of the mobile band, which can account for the experimental behaviour of the normal transport properties and the superconducting dome.},
doi = {10.1038/ncomms9239},
journal = {Nature Communications},
number = 1,
volume = 6,
place = {United States},
year = {Fri Sep 11 00:00:00 EDT 2015},
month = {Fri Sep 11 00:00:00 EDT 2015}
}
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Figure 1: Superconducting phase diagram. A colour map of the normalized resistance plotted as a function of gate bias and temperature. Each resistance value is divided by the resistance at T= 800mK (above $T_c$) and the same value of $V$g (Sample A).
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