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Title: Scaling growth rates for perovskite oxide virtual substrates on silicon

Journal Article · · Nature Communications
 [1];  [2]; ORCiD logo [1];  [1];  [1];  [3]
  1. Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, 16802, USA
  2. Materials Science and Technology, Oak Ridge National Lab, Oak Ridge, TN, 37831, USA; Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, 16802, USA
  3. Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, 16802, USA; Department of Physics, Pennsylvania State University, University Park, PA, 16802, USA; Department of Chemistry, Pennsylvania State University, University Park, PA, 16802, USA

The availability of native substrates is a cornerstone in the development of microelectronic technologies relying on epitaxial films. If native substrates are not available, virtual substrates - crystalline buffer layers epitaxially grown on a structurally dissimilar substrate - offer a solution. Realizing commercially viable virtual substrates requires the growth of high-quality films at high growth rates for large-scale production. We report the stoichiometric growth of SrTiO3 exceeding 600 nm hr-1. This tenfold increase in growth rate compared to SrTiO3 grown on silicon by conventional methods is enabled by a self-regulated growth window accessible in hybrid molecular beam epitaxy. Overcoming the materials integration challenge for complex oxides on silicon using virtual substrates opens a path to develop new electronic devices in the More than Moore era and silicon integrated quantum computation hardware.

Research Organization:
Pennsylvania State Univ., University Park, PA (United States)
Sponsoring Organization:
USDOE Office of Science (SC); National Science Foundation (NSF); Pennsylvania State University; USDOE
Grant/Contract Number:
SC0012375; DMR-1420620; DMR-1629477; DMR-1352502
OSTI ID:
1619519
Alternate ID(s):
OSTI ID: 1624157
Journal Information:
Nature Communications, Vol. 10, Issue 1; ISSN 2041-1723
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United States
Language:
English

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journal November 2009
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journal May 2010
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journal November 2015
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