Cyclotron resonance in the high mobility GaAs/AlGaAs 2D electron system over the microwave, mm-wave, and terahertz- bands
Abstract
Abstract The reflected microwave power from the photo-excited high mobility GaAs/AlGaAs 2D device has been measured over the wide frequency band spanning from 30 to 330 GHz simultaneously along with diagonal magnetoresistance as a function of the magnetic field. Easily distinguishable resonances in the reflected power signal are observed at the same magnetic fields as a reduced amplitude in the Shubnikov-de Haas (SdH) oscillations of the diagonal magnetoresistance. The reflection resonances with concurrent amplitude reduction in SdH oscillations are correlated with cyclotron resonance induced by microwave, mm-wave, and terahertz photoexcitation. The magnetoplasma effect was also investigated. The results suggest a finite frequency zero-magnetic-field intercept, providing an estimate for the plasma frequency. The experimentally measured plasma frequency appears to be somewhat lower than the estimated plasma frequency for these Hall bars. The results, in sum, are consistent with an effective mass ratio of m*/m = 0.067, the standard value, even in these high mobility GaAs/AlGaAs devices, at very large filling factors. Preliminary findings from this article have been published as conference proceedings, see Kriisa, A., et al ., J. of Phys. Conf. Ser . 864 , 012057 (2017).
- Authors:
- Publication Date:
- Research Org.:
- Georgia State Univ., Atlanta, GA (United States)
- Sponsoring Org.:
- USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Science Foundation (NSF); Army Research Office (ARO)
- OSTI Identifier:
- 1619500
- Alternate Identifier(s):
- OSTI ID: 1610572
- Grant/Contract Number:
- SC0001762; W911NF-14-2-0076; W911NF-15-1-0433; ECCS-1710302
- Resource Type:
- Published Article
- Journal Name:
- Scientific Reports
- Additional Journal Information:
- Journal Name: Scientific Reports Journal Volume: 9 Journal Issue: 1; Journal ID: ISSN 2045-2322
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United Kingdom
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Science & Technology - Other Topics
Citation Formats
Kriisa, A., Samaraweera, R. L., Heimbeck, M. S., Everitt, H. O., Reichl, C., Wegscheider, W., and Mani, R. G. Cyclotron resonance in the high mobility GaAs/AlGaAs 2D electron system over the microwave, mm-wave, and terahertz- bands. United Kingdom: N. p., 2019.
Web. doi:10.1038/s41598-019-39186-2.
Kriisa, A., Samaraweera, R. L., Heimbeck, M. S., Everitt, H. O., Reichl, C., Wegscheider, W., & Mani, R. G. Cyclotron resonance in the high mobility GaAs/AlGaAs 2D electron system over the microwave, mm-wave, and terahertz- bands. United Kingdom. https://doi.org/10.1038/s41598-019-39186-2
Kriisa, A., Samaraweera, R. L., Heimbeck, M. S., Everitt, H. O., Reichl, C., Wegscheider, W., and Mani, R. G. Wed .
"Cyclotron resonance in the high mobility GaAs/AlGaAs 2D electron system over the microwave, mm-wave, and terahertz- bands". United Kingdom. https://doi.org/10.1038/s41598-019-39186-2.
@article{osti_1619500,
title = {Cyclotron resonance in the high mobility GaAs/AlGaAs 2D electron system over the microwave, mm-wave, and terahertz- bands},
author = {Kriisa, A. and Samaraweera, R. L. and Heimbeck, M. S. and Everitt, H. O. and Reichl, C. and Wegscheider, W. and Mani, R. G.},
abstractNote = {Abstract The reflected microwave power from the photo-excited high mobility GaAs/AlGaAs 2D device has been measured over the wide frequency band spanning from 30 to 330 GHz simultaneously along with diagonal magnetoresistance as a function of the magnetic field. Easily distinguishable resonances in the reflected power signal are observed at the same magnetic fields as a reduced amplitude in the Shubnikov-de Haas (SdH) oscillations of the diagonal magnetoresistance. The reflection resonances with concurrent amplitude reduction in SdH oscillations are correlated with cyclotron resonance induced by microwave, mm-wave, and terahertz photoexcitation. The magnetoplasma effect was also investigated. The results suggest a finite frequency zero-magnetic-field intercept, providing an estimate for the plasma frequency. The experimentally measured plasma frequency appears to be somewhat lower than the estimated plasma frequency for these Hall bars. The results, in sum, are consistent with an effective mass ratio of m*/m = 0.067, the standard value, even in these high mobility GaAs/AlGaAs devices, at very large filling factors. Preliminary findings from this article have been published as conference proceedings, see Kriisa, A., et al ., J. of Phys. Conf. Ser . 864 , 012057 (2017).},
doi = {10.1038/s41598-019-39186-2},
journal = {Scientific Reports},
number = 1,
volume = 9,
place = {United Kingdom},
year = {Wed Feb 20 00:00:00 EST 2019},
month = {Wed Feb 20 00:00:00 EST 2019}
}
https://doi.org/10.1038/s41598-019-39186-2
Web of Science
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