Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques
Abstract
The attachment of dopant precursor molecules to depassivated areas of hydrogen-terminated silicon templated with a scanning tunneling microscope (STM) has been used to create electronic devices with sub-nanometer precision, typically for quantum physics demonstrations, and to dope silicon past the solid-solubility limit, with potential applications in microelectronics and plasmonics. However, this process, which we call atomic precision advanced manufacturing (APAM), currently lacks the throughput required to develop sophisticated applications because there is no proven scalable hydrogen lithography pathway. Here, we demonstrate and characterize an APAM device workflow where STM lithography has been replaced with photolithography. An ultraviolet laser is shown to locally heat silicon controllably above the temperature required for hydrogen depassivation. STM images indicate a narrow range of laser energy density where hydrogen has been depassivated, and the surface remains well-ordered. A model for photothermal heating of silicon predicts a local temperature which is consistent with atomic-scale STM images of the photo-patterned regions. Finally, a simple device made by exposing photo-depassivated silicon to phosphine is found to have a carrier density and mobility similar to that produced by similar devices patterned by STM.
- Authors:
-
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Univ. of Arizona, Tucson, AZ (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1619225
- Report Number(s):
- SAND-2020-2754J
Journal ID: ISSN 0277-786X; 684514
- Grant/Contract Number:
- AC04-94AL85000; NA0003525
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Proceedings of SPIE - The International Society for Optical Engineering
- Additional Journal Information:
- Journal Volume: 11324; Conference: Novel Patterning Technologies for Semiconductors, MEMS/NEMS and MOEMS 2020, San Jose, CA (United States), 23-27 Feb 2020; Journal ID: ISSN 0277-786X
- Publisher:
- SPIE
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; photolithography; photothermal effects; hydrogen lithography; surface morphology; nanoscale devices; scanned probe lithography
Citation Formats
Katzenmeyer, Aaron, Dmitrovic, Sanja, Baczewski, Andrew, Bussmann, Ezra, Lu, Tzu-Ming, Anderson, Evan, Schmucker, Scott, Ivie, Jeff, Campbell, DeAnna, Ward, Daniel, Wang, George, and Misra, Shashank. Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques. United States: N. p., 2020.
Web. doi:10.1117/12.2551455.
Katzenmeyer, Aaron, Dmitrovic, Sanja, Baczewski, Andrew, Bussmann, Ezra, Lu, Tzu-Ming, Anderson, Evan, Schmucker, Scott, Ivie, Jeff, Campbell, DeAnna, Ward, Daniel, Wang, George, & Misra, Shashank. Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques. United States. https://doi.org/10.1117/12.2551455
Katzenmeyer, Aaron, Dmitrovic, Sanja, Baczewski, Andrew, Bussmann, Ezra, Lu, Tzu-Ming, Anderson, Evan, Schmucker, Scott, Ivie, Jeff, Campbell, DeAnna, Ward, Daniel, Wang, George, and Misra, Shashank. Mon .
"Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques". United States. https://doi.org/10.1117/12.2551455. https://www.osti.gov/servlets/purl/1619225.
@article{osti_1619225,
title = {Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques},
author = {Katzenmeyer, Aaron and Dmitrovic, Sanja and Baczewski, Andrew and Bussmann, Ezra and Lu, Tzu-Ming and Anderson, Evan and Schmucker, Scott and Ivie, Jeff and Campbell, DeAnna and Ward, Daniel and Wang, George and Misra, Shashank},
abstractNote = {The attachment of dopant precursor molecules to depassivated areas of hydrogen-terminated silicon templated with a scanning tunneling microscope (STM) has been used to create electronic devices with sub-nanometer precision, typically for quantum physics demonstrations, and to dope silicon past the solid-solubility limit, with potential applications in microelectronics and plasmonics. However, this process, which we call atomic precision advanced manufacturing (APAM), currently lacks the throughput required to develop sophisticated applications because there is no proven scalable hydrogen lithography pathway. Here, we demonstrate and characterize an APAM device workflow where STM lithography has been replaced with photolithography. An ultraviolet laser is shown to locally heat silicon controllably above the temperature required for hydrogen depassivation. STM images indicate a narrow range of laser energy density where hydrogen has been depassivated, and the surface remains well-ordered. A model for photothermal heating of silicon predicts a local temperature which is consistent with atomic-scale STM images of the photo-patterned regions. Finally, a simple device made by exposing photo-depassivated silicon to phosphine is found to have a carrier density and mobility similar to that produced by similar devices patterned by STM.},
doi = {10.1117/12.2551455},
journal = {Proceedings of SPIE - The International Society for Optical Engineering},
number = ,
volume = 11324,
place = {United States},
year = {Mon Mar 23 00:00:00 EDT 2020},
month = {Mon Mar 23 00:00:00 EDT 2020}
}
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