skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Influence of substrate misorientation on the optical properties of Mg-doped GaN

Authors:
ORCiD logo [1]; ORCiD logo [1];  [2];  [2]; ORCiD logo [1]
  1. Department of Physics, Arizona State University, Tempe, Arizona 85287-1504, USA
  2. HC SemiTek Corporation, Wuhan 430223, People’s Republic of China
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1618950
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 127 Journal Issue: 19; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Liu, Hanxiao, Su, Po-Yi, Wu, Zhihao, Liu, Rong, and Ponce, Fernando A. Influence of substrate misorientation on the optical properties of Mg-doped GaN. United States: N. p., 2020. Web. doi:10.1063/5.0001482.
Liu, Hanxiao, Su, Po-Yi, Wu, Zhihao, Liu, Rong, & Ponce, Fernando A. Influence of substrate misorientation on the optical properties of Mg-doped GaN. United States. doi:https://doi.org/10.1063/5.0001482
Liu, Hanxiao, Su, Po-Yi, Wu, Zhihao, Liu, Rong, and Ponce, Fernando A. Thu . "Influence of substrate misorientation on the optical properties of Mg-doped GaN". United States. doi:https://doi.org/10.1063/5.0001482.
@article{osti_1618950,
title = {Influence of substrate misorientation on the optical properties of Mg-doped GaN},
author = {Liu, Hanxiao and Su, Po-Yi and Wu, Zhihao and Liu, Rong and Ponce, Fernando A.},
abstractNote = {},
doi = {10.1063/5.0001482},
journal = {Journal of Applied Physics},
number = 19,
volume = 127,
place = {United States},
year = {2020},
month = {5}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: https://doi.org/10.1063/5.0001482

Citation Metrics:
Cited by: 1 work
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Temperature quenching of photoluminescence intensities in undoped and doped GaN
journal, October 1999

  • Leroux, M.; Grandjean, N.; Beaumont, B.
  • Journal of Applied Physics, Vol. 86, Issue 7
  • DOI: 10.1063/1.371242

Observation of Mg-Rich Precipitates in the p-Type Doping of GaN-Based Laser Diodes
journal, November 2001


Dopant profiling in p-i-n GaN structures using secondary electrons
journal, July 2019

  • Alugubelli, Shanthan R.; Fu, Houqiang; Fu, Kai
  • Journal of Applied Physics, Vol. 126, Issue 1
  • DOI: 10.1063/1.5096273

Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics
journal, February 2019

  • Liu, Hanxiao; Fu, Houqiang; Fu, Kai
  • Applied Physics Letters, Vol. 114, Issue 8
  • DOI: 10.1063/1.5088168

Scanning Electron Microscopy and X-ray Microanalysis
book, January 2003


Activation of acceptors in Mg‐doped GaN grown by metalorganic chemical vapor deposition
journal, January 1996

  • Götz, W.; Johnson, N. M.; Walker, J.
  • Applied Physics Letters, Vol. 68, Issue 5
  • DOI: 10.1063/1.116503

Vertical Power p-n Diodes Based on Bulk GaN
journal, February 2015

  • Kizilyalli, Isik C.; Edwards, Andrew P.; Aktas, Ozgur
  • IEEE Transactions on Electron Devices, Vol. 62, Issue 2
  • DOI: 10.1109/TED.2014.2360861

Self-compensation in Mg doped p-type GaN grown by MOCVD
journal, December 1998


The 2018 GaN power electronics roadmap
journal, March 2018

  • Amano, H.; Baines, Y.; Beam, E.
  • Journal of Physics D: Applied Physics, Vol. 51, Issue 16
  • DOI: 10.1088/1361-6463/aaaf9d

Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy
journal, October 2008

  • Suski, T.; Litwin-Staszewska, E.; Piotrzkowski, R.
  • Applied Physics Letters, Vol. 93, Issue 17
  • DOI: 10.1063/1.3013352

Behavior and mechanism of step bunching during metalorganic vapor phase epitaxy of GaAs
journal, April 1995

  • Shinohara, Masanori; Inoue, Naohisa
  • Applied Physics Letters, Vol. 66, Issue 15
  • DOI: 10.1063/1.113282

Hole conductivity and compensation in epitaxial GaN:Mg layers
journal, October 2000


Penetration and energy-loss theory of electrons in solid targets
journal, January 1972


Origin of defect-related photoluminescence bands in doped and nominally undoped GaN
journal, February 1999


Investigation of the formation of the 2.8 eV luminescence band in p -type GaN:Mg
journal, May 2000

  • Shahedipour, F.; Wessels, B. W.
  • Applied Physics Letters, Vol. 76, Issue 21
  • DOI: 10.1063/1.126562

Magnesium induced changes in the selective growth of GaN by metalorganic vapor phase epitaxy
journal, February 1998

  • Beaumont, B.; Haffouz, S.; Gibart, P.
  • Applied Physics Letters, Vol. 72, Issue 8
  • DOI: 10.1063/1.120874

Mg-doped GaN: Similar defects in bulk crystals and layers grown on Al2O3 by metal–organic chemical-vapor deposition
journal, December 1999

  • Liliental-Weber, Z.; Benamara, M.; Swider, W.
  • Applied Physics Letters, Vol. 75, Issue 26
  • DOI: 10.1063/1.125568

Growth and Luminescence Properties of Mg-Doped GaN Prepared by MOVPE
journal, January 1990

  • Amano, Hiroshi
  • Journal of The Electrochemical Society, Vol. 137, Issue 5
  • DOI: 10.1149/1.2086742

Nature of the 2.8 eV photoluminescence band in Mg doped GaN
journal, March 1998

  • Kaufmann, U.; Kunzer, M.; Maier, M.
  • Applied Physics Letters, Vol. 72, Issue 11
  • DOI: 10.1063/1.120983