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Title: Topological properties of SnSe/EuS and SnTe/CaTe interfaces

Abstract

Herein, we use density functional theory calculations to study the electronic structure of epitaxial (111) interfaces of the topological crystalline insulators SnSe and SnTe with the magnetic insulator EuS and the non-magnetic insulator CaTe, respectively. We further consider both interface slab models with a vacuum region and periodic heterostructures without vacuum. We find that gaps of 21 meV at the Γ point and 9 meV at the M point arise in the topological state at the SnSe/EuS interface, due to the magnetic proximity effect, which breaks the time reversal symmetry. The surface state at Γ is shifted below the Fermi level by 88 meV and the surface state at M is shifted above the Fermi level by 47 meV, owing to band bending at the interface. By comparison, the topological state at the interface of SnTe/CaTe is unperturbed by the presence of non-magnetic CaTe.

Authors:
ORCiD logo [1];  [1]; ORCiD logo [1]
  1. Carnegie Mellon Univ., Pittsburgh, PA (United States)
Publication Date:
Research Org.:
Univ. of Minnesota, Minneapolis, MN (United States); Univ. of California, Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Science Foundation (NSF)
OSTI Identifier:
1618854
Alternate Identifier(s):
OSTI ID: 1605961
Grant/Contract Number:  
SC0019274; OISE-1743717; AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Volume: 4; Journal Issue: 3; Journal ID: ISSN 2475-9953
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DFT; topological materials; interfaces

Citation Formats

Yang, Shuyang, Wu, Chunzhi, and Marom, Noa. Topological properties of SnSe/EuS and SnTe/CaTe interfaces. United States: N. p., 2020. Web. doi:10.1103/PhysRevMaterials.4.034203.
Yang, Shuyang, Wu, Chunzhi, & Marom, Noa. Topological properties of SnSe/EuS and SnTe/CaTe interfaces. United States. doi:https://doi.org/10.1103/PhysRevMaterials.4.034203
Yang, Shuyang, Wu, Chunzhi, and Marom, Noa. Mon . "Topological properties of SnSe/EuS and SnTe/CaTe interfaces". United States. doi:https://doi.org/10.1103/PhysRevMaterials.4.034203. https://www.osti.gov/servlets/purl/1618854.
@article{osti_1618854,
title = {Topological properties of SnSe/EuS and SnTe/CaTe interfaces},
author = {Yang, Shuyang and Wu, Chunzhi and Marom, Noa},
abstractNote = {Herein, we use density functional theory calculations to study the electronic structure of epitaxial (111) interfaces of the topological crystalline insulators SnSe and SnTe with the magnetic insulator EuS and the non-magnetic insulator CaTe, respectively. We further consider both interface slab models with a vacuum region and periodic heterostructures without vacuum. We find that gaps of 21 meV at the Γ point and 9 meV at the M point arise in the topological state at the SnSe/EuS interface, due to the magnetic proximity effect, which breaks the time reversal symmetry. The surface state at Γ is shifted below the Fermi level by 88 meV and the surface state at M is shifted above the Fermi level by 47 meV, owing to band bending at the interface. By comparison, the topological state at the interface of SnTe/CaTe is unperturbed by the presence of non-magnetic CaTe.},
doi = {10.1103/PhysRevMaterials.4.034203},
journal = {Physical Review Materials},
number = 3,
volume = 4,
place = {United States},
year = {2020},
month = {3}
}

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