Determination of background doping polarity of unintentionally doped semiconductor layers

Fink, D. R.; Lee, S.; Kodati, S. H.; Rogers, V.; Ronningen, T. J.; Winslow, M.; Grein, C. H.; Jones, A. H.; Campbell, J. C.; Klem, J. F.; Krishna, S.

doi:10.1063/1.5142377

Title: Determination of background doping polarity of unintentionally doped semiconductor layers

Journal Article · 19 February 2020 · Applied Physics Letters

DOI: https://doi.org/10.1063/1.5142377 · OSTI ID:1617309

Fink, D. R. ^[1]; Lee, S. ^[1]; Kodati, S. H. ^[1]; Rogers, V. ^[1];

^[1]; Winslow, M. ^[2]; Grein, C. H. ^[2]; Jones, A. H. ^[3]; Campbell, J. C. ^[3]; Klem, J. F. ^[4];

^[1]

The Ohio State Univ., Columbus, OH (United States)
Univ. of Illinois, Chicago, IL (United States)
Univ. of Virginia, Charlottesville, VA (United States)
Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

Here, we present a method of determining the background doping type in semiconductors using capacitance–voltage measurements on overetched double mesa p–i–n or n–i–p structures. Unlike Hall measurements, this method is not limited by the conductivity of the substrate. By measuring the capacitance of devices with varying top and bottom mesa sizes, we were able to conclusively determine which mesa contained the p–n junction, revealing the polarity of the intrinsic layer. This method, when demonstrated on GaSb p–i–n and n–i–p structures, concluded that the material is residually doped p-type, which is well established by other sources. The method was then applied to a 10 monolayer InAs/10 monolayer AlSb superlattice, for which the doping polarity was unknown, and indicated that this material is also p-type.

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Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000; NA0003525

OSTI ID:: 1617309

Report Number(s):: SAND--2019-15119J; 682173

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 7 Vol. 116; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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