Reflectivity and PDE of VUV4 Hamamatsu SiPMs in liquid xenon

Nakarmi, P.; Ostrovskiy, I.; Soma, A. K.; Retière, F.; Kharusi, S. Al; Alfaris, M.; Anton, G.; Arnquist, I. J.; Badhrees, I.; Barbeau, P. S.; Beck, D.; Belov, V.; Bhatta, T.; Blatchford, J.; Breur, P. A.; Brodsky, J. P.; Brown, E.; Brunner, T.; Mamahit, S. Byrne; Caden, E.; Cao, G. F.; Cao, L.; Chambers, C.; Chana, B.; Charlebois, S. A.; Chiu, M.; Cleveland, B.; Coon, M.; Craycraft, A.; Dalmasson, J.; Daniels, T.; Darroch, L.; Croix, A. De St.; Mesrobian-Kabakian, A. Der; DeVoe, R.; Vacri, M. L.  Di; Dilling, J.; Ding, Y. Y.; Dolinski, M. J.; Doria, L.; Dragone, A.; Echevers, J.; Edaltafar, F.; Elbeltagi, M.; Fabris, L.; Fairbank, D.; Fairbank, W.; Farine, J.; Ferrara, S.; Feyzbakhsh, S.; Fontaine, R.; Fucarino, A.; Gallina, G.; Gautam, P.; Giacomini, G.; Goeldi, D.; Gornea, R.; Gratta, G.; Hansen, E. V.; Heffner, M.; Hoppe, E. W.; Hößl, J.; House, A.; Hughes, M.; Iverson, A.; Jamil, A.; Jewell, M. J.; Jiang, X. S.; Karelin, A.; Kaufman, L. J.; Koffas, T.; Krücken, R.; Kuchenkov, A.; Kumar, K. S.; Lan, Y.; Larson, A.; Leach, K. G.; Lenardo, B. G.; Leonard, D. S.; Li, G.; Li, S.; Li, Z.; Licciardi, C.; Lv, P.; MacLellan, R.; Massacret, N.; McElroy, T.; Medina-Peregrina, M.; Michel, T.; Mong, B.; Moore, D. C.; Murray, K.; Natzke, C. R.; Newby, R. J.; Ning, Z.; Njoya, O.; Nolet, F.; Nusair, O.; Odgers, K.; Odian, A.; Oriunno, M.; Orrell, J. L.; Ortega, G. S.; Overman, C. T.; Parent, S.; Piepke, A.; Pocar, A.; Pratte, J. -F.; Radeka, V.; Raguzin, E.; Rescia, S.; Richman, M.; Robinson, A.; Rossignol, T.; Rowson, P. C.; Roy, N.; Runge, J.; Saldanha, R.; Sangiorgio, S.; VIII, K. Skarpaas; St-Hilaire, G.; Stekhanov, V.; Stiegler, T.; Sun, X. L.; Tarka, M.; Todd, J.; Totev, T. I.; Tsang, R.; Tsang, T.; Vachon, F.; Veeraraghavan, V.; Viel, S.; Visser, G.; Vivo-Vilches, C.; Vuilleumier, J. -L.; Wagenpfeil, M.; Wager, T.; Walent, M.; Wang, Q.; Ward, M.; Watkins, J.; Weber, M.; Wei, W.; Wen, L. J.; Wichoski, U.; Wu, S. X.; Wu, W. H.; Wu, X.; Xia, Q.; Yang, H.; Yang, L.; Zeldovich, O.; Zhao, J.; Zhou, Y.; Ziegler, T.

doi:10.1088/1748-0221/15/01/p01019

Title: Reflectivity and PDE of VUV4 Hamamatsu SiPMs in liquid xenon

Journal Article · 16 January 2020 · Journal of Instrumentation

DOI: https://doi.org/10.1088/1748-0221/15/01/p01019 · OSTI ID:1617159

Nakarmi, P.; Ostrovskiy, I.; Soma, A. K.; Retière, F.; Kharusi, S. Al; Alfaris, M.; Anton, G.; Arnquist, I. J.; Badhrees, I.; Barbeau, P. S.; Beck, D.; Belov, V.; Bhatta, T.; Blatchford, J.; Breur, P. A.; Brodsky, J. P.; Brown, E.; Brunner, T.; Mamahit, S. Byrne; Caden, E. more »

Considering reflective properties of materials and photodetection efficiency (PDE) of photodetectors is important for optimizing energy resolution and sensitivity of the next generation neutrinoless double beta decay, direct detection dark matter, and neutrino oscillation experiments that will use noble liquid gases, such as nEXO, DARWIN, DarkSide-20k, and DUNE . Little information is currently available about reflectivity and PDE in liquid noble gases, because such measurements are difficult to conduct in a cryogenic environment and at short enough wavelengths. Here we report a measurement of specular reflectivity and relative PDE of Hamamatsu VUV4 silicon photomultipliers (SiPMs) with 50 μm micro-cells conducted with xenon scintillation light (~175 nm) in liquid xenon. The specular reflectivity at 15^o incidence of three samples of VUV4 SiPMs is found to be 30.4±1.4%, 28.6±1.3%, and 28.0±1.3%, respectively. The PDE at normal incidence differs by ±8% (standard deviation) among the three devices. The angular dependence of the reflectivity and PDE was further measured for one of the SiPMs. Both the reflectivity and PDE decrease as the angle of incidence increases. This is the first measurement of an angular dependence of PDE and reflectivity of a SiPM in liquid xenon.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States); Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States); SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States); Stanford Univ., CA (United States); Univ. of Alabama, Tuscaloosa, AL (United States)

Sponsoring Organization:: Canada Foundation for Innovation (CFI); Chinese Academy of Sciences (CAS); Fonds de recherche du Québec – Nature et technologies (FRQNT); Institute for Basic Science (IBS); McDonald Institute (CFREF); National Natural Science Foundation of China (NSFC); National Research Council Canada (NRC); National Science Foundation (NSF); Natural Sciences and Engineering Research Council of Canada (NSERC); Nvidia Corporation; Russian Foundation for Basic Research (RFBR); USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Nuclear Physics (NP)

Contributing Organization:: nEXO Collaboration; nEXO collaboration

Grant/Contract Number:: AC02-76SF00515; AC52-07NA27344; FG02-01ER41166; SC0017970; SC0019261

OSTI ID:: 1617159

Report Number(s):: BNL--215996-2020-JAAM; LLNL-JRNL--822165

Journal Information:: Journal of Instrumentation, Journal Name: Journal of Instrumentation Journal Issue: 01 Vol. 15; ISSN 1748-0221

Publisher:: Institute of Physics (IOP)Copyright Statement

Country of Publication:: United States

Language:: English

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73 NUCLEAR PHYSICS AND RADIATION PHYSICS
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Title: Reflectivity and PDE of VUV4 Hamamatsu SiPMs in liquid xenon

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