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Title: Bandgap tuning of two-dimensional materials by sphere diameter engineering

Abstract

Developing a precise and reproducible bandgap tuning method that enables tailored design of materials is of crucial importance for optoelectronic devices. Towards this end, we report a sphere diameter engineering (SDE) technique to manipulate the bandgap of two-dimensional (2D) materials. A one-to-one correspondence with an ideal linear working curve is established between the bandgap of MoS2 and the sphere diameter in a continuous range as large as 360 meV. Fully uniform bandgap tuning of all the as-grown MoS2 crystals is realized due to the isotropic characteristic of the sphere. More intriguingly, both a decrease and an increase of the bandgap can be achieved by constructing a positive or negative curvature. By fusing individual spheres in the melted state, post-synthesis bandgap adjustment of the supported 2D materials can be realized. In conclusion, this SDE technique, showing good precision, uniformity and reproducibility with high efficiency, may further accelerate the potential applications of 2D materials.

Authors:
 [1];  [1];  [1];  [2];  [3];  [4]; ORCiD logo [4];  [5];  [5];  [6]; ORCiD logo [6];  [6]; ORCiD logo [6]; ORCiD logo [7];  [1];  [4];  [8]; ORCiD logo [5]; ORCiD logo [1]
  1. Wuhan Univ. (China)
  2. Leibniz Inst. for Solid State and Materials Research (IFW), Dresden (Germany); Soochow Univ., Suzhou (China)
  3. Argonne National Lab. (ANL), Argonne, IL (United States); Univ. of Science and Technology of China, Hefei (China)
  4. Peking Univ., Beijing (China)
  5. Argonne National Lab. (ANL), Argonne, IL (United States)
  6. Chinese Academy of Sciences (CAS), Shanghai (China)
  7. Soochow Univ., Suzhou (China)
  8. Leibniz Inst. for Solid State and Materials Research (IFW), Dresden (Germany); Soochow Univ., Suzhou (China); Polish Academy of Sciences (PAS), Zabrze (Poland)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); Natural Science Foundation of China; Sino-German Center for Research Promotion; Postdoctoral Innovation Talent Support Program of China
OSTI Identifier:
1616692
Grant/Contract Number:  
AC02-06CH11357; 21673161; 21905210; 21473124; GZ 1400; BX20180224
Resource Type:
Accepted Manuscript
Journal Name:
Nature Materials
Additional Journal Information:
Journal Volume: 19; Journal Issue: 5; Journal ID: ISSN 1476-1122
Publisher:
Springer Nature - Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Zeng, Mengqi, Liu, Jinxin, Zhou, Lu, Mendes, Rafael G., Dong, Yongqi, Zhang, Min-Ye, Cui, Zhi-Hao, Cai, Zhonghou, Zhang, Zhan, Zhu, Daming, Yang, Tieying, Li, Xiaolong, Wang, Jianqiang, Zhao, Liang, Chen, Guoxian, Jiang, Hong, Rümmeli, Mark H., Zhou, Hua, and Fu, Lei. Bandgap tuning of two-dimensional materials by sphere diameter engineering. United States: N. p., 2020. Web. doi:10.1038/s41563-020-0622-y.
Zeng, Mengqi, Liu, Jinxin, Zhou, Lu, Mendes, Rafael G., Dong, Yongqi, Zhang, Min-Ye, Cui, Zhi-Hao, Cai, Zhonghou, Zhang, Zhan, Zhu, Daming, Yang, Tieying, Li, Xiaolong, Wang, Jianqiang, Zhao, Liang, Chen, Guoxian, Jiang, Hong, Rümmeli, Mark H., Zhou, Hua, & Fu, Lei. Bandgap tuning of two-dimensional materials by sphere diameter engineering. United States. doi:https://doi.org/10.1038/s41563-020-0622-y
Zeng, Mengqi, Liu, Jinxin, Zhou, Lu, Mendes, Rafael G., Dong, Yongqi, Zhang, Min-Ye, Cui, Zhi-Hao, Cai, Zhonghou, Zhang, Zhan, Zhu, Daming, Yang, Tieying, Li, Xiaolong, Wang, Jianqiang, Zhao, Liang, Chen, Guoxian, Jiang, Hong, Rümmeli, Mark H., Zhou, Hua, and Fu, Lei. Mon . "Bandgap tuning of two-dimensional materials by sphere diameter engineering". United States. doi:https://doi.org/10.1038/s41563-020-0622-y. https://www.osti.gov/servlets/purl/1616692.
@article{osti_1616692,
title = {Bandgap tuning of two-dimensional materials by sphere diameter engineering},
author = {Zeng, Mengqi and Liu, Jinxin and Zhou, Lu and Mendes, Rafael G. and Dong, Yongqi and Zhang, Min-Ye and Cui, Zhi-Hao and Cai, Zhonghou and Zhang, Zhan and Zhu, Daming and Yang, Tieying and Li, Xiaolong and Wang, Jianqiang and Zhao, Liang and Chen, Guoxian and Jiang, Hong and Rümmeli, Mark H. and Zhou, Hua and Fu, Lei},
abstractNote = {Developing a precise and reproducible bandgap tuning method that enables tailored design of materials is of crucial importance for optoelectronic devices. Towards this end, we report a sphere diameter engineering (SDE) technique to manipulate the bandgap of two-dimensional (2D) materials. A one-to-one correspondence with an ideal linear working curve is established between the bandgap of MoS2 and the sphere diameter in a continuous range as large as 360 meV. Fully uniform bandgap tuning of all the as-grown MoS2 crystals is realized due to the isotropic characteristic of the sphere. More intriguingly, both a decrease and an increase of the bandgap can be achieved by constructing a positive or negative curvature. By fusing individual spheres in the melted state, post-synthesis bandgap adjustment of the supported 2D materials can be realized. In conclusion, this SDE technique, showing good precision, uniformity and reproducibility with high efficiency, may further accelerate the potential applications of 2D materials.},
doi = {10.1038/s41563-020-0622-y},
journal = {Nature Materials},
number = 5,
volume = 19,
place = {United States},
year = {2020},
month = {2}
}

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