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Title: Performance of new radiation-tolerant thin planar and 3D columnar n + on p silicon pixel sensors up to a maximum fluence of ~ 5 × 1 0 15 n eq /cm 2

Abstract

The High Luminosity upgrade of the CERN Large Hadron Collider (HL-LHC) calls for new high radiation-tolerant solid-state pixel sensors, capable of surviving irradiation fluences up to a few 1 0 16 n eq /cm 2 at ~ 3 cm from the interaction point. The INFN ATLAS-CMS joint research activity, in collaboration with Fondazione Bruno Kessler, is aiming at the development of thin n + on p type pixel sensors to be operated at the HL-LHC. The R&D covers both planar and 3D pixel devices made on substrates obtained by the Direct Wafer Bonding technique. The active thickness of the planar sensors studied in this paper is 100 μ m or 130 μ m , that of 3D sensors 130 μ m . First prototypes of hybrid modules, bump-bonded to the present CMS readout chips (PSI46 digital), have been characterized in beam tests. Finally, first results on their performance before and after irradiation up to a maximum fluence of ~ 5 × 1 0 15 n eq /cm 2 are reported in this article.

Authors:
 [1];  [2];  [3];  [4];  [5];  [6];  [7];  [3];  [8];  [9];  [7];  [10];  [6];  [3];  [10];  [8];  [11];  [5]
  1. Fondazione Bruno Kessler, Trento (Italy); TIFPA-INFN, Trenton (Italy)
  2. Univ. degli Studi (Italy); National Inst. of Nuclear Physics (INFN), Firenze (Italy)
  3. TIFPA-INFN, Trenton (Italy); Univ. di Trento (Italy)
  4. National Inst. of Nuclear Physics (INFN), Genova (Italy)
  5. Univ. degli Studi di Milano-Bicocca, Milano (Italy); INFN-Bicocca, Milano (Italy)
  6. Fondazione Bruno Kessler, Trento (Italy)
  7. INFN-Bicocca, Milano (Italy)
  8. National Inst. of Nuclear Physics (INFN), Firenze (Italy)
  9. Univ. degli Studi di Pisa (Italy); National Inst. of Nuclear Physics (INFN), Pisa (Italy)
  10. Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
  11. Hamburg Univ. (Germany)
Publication Date:
Research Org.:
Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), High Energy Physics (HEP)
OSTI Identifier:
1616318
Report Number(s):
FERMILAB-PUB-20-147-SCD
Journal ID: ISSN 0168-9002; oai:inspirehep.net:1770383
Grant/Contract Number:  
AC02-07CH11359; 654168
Resource Type:
Accepted Manuscript
Journal Name:
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
Additional Journal Information:
Journal Volume: 953; Journal Issue: C; Journal ID: ISSN 0168-9002
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; pixel; silicon; sensor; planar; 3D; radiatoin hard; HL-LHC

Citation Formats

Boscardin, M., Ceccarelli, R., Dalla Betta, G. F., Darbo, G., Dinardo, M. E., Giacomini, G., Menasce, D., Mendicino, R., Meschini, M., Messineo, A., Moroni, L., Rivera, R., Ronchin, S., Sultan, D. M. S., Uplegger, L., Viliani, L., Zoi, I., and Zuolo, D.. Performance of new radiation-tolerant thin planar and 3D columnar n + on p silicon pixel sensors up to a maximum fluence of ~5×1015 n eq /cm 2. United States: N. p., 2019. Web. https://doi.org/10.1016/j.nima.2019.163222.
Boscardin, M., Ceccarelli, R., Dalla Betta, G. F., Darbo, G., Dinardo, M. E., Giacomini, G., Menasce, D., Mendicino, R., Meschini, M., Messineo, A., Moroni, L., Rivera, R., Ronchin, S., Sultan, D. M. S., Uplegger, L., Viliani, L., Zoi, I., & Zuolo, D.. Performance of new radiation-tolerant thin planar and 3D columnar n + on p silicon pixel sensors up to a maximum fluence of ~5×1015 n eq /cm 2. United States. https://doi.org/10.1016/j.nima.2019.163222
Boscardin, M., Ceccarelli, R., Dalla Betta, G. F., Darbo, G., Dinardo, M. E., Giacomini, G., Menasce, D., Mendicino, R., Meschini, M., Messineo, A., Moroni, L., Rivera, R., Ronchin, S., Sultan, D. M. S., Uplegger, L., Viliani, L., Zoi, I., and Zuolo, D.. Wed . "Performance of new radiation-tolerant thin planar and 3D columnar n + on p silicon pixel sensors up to a maximum fluence of ~5×1015 n eq /cm 2". United States. https://doi.org/10.1016/j.nima.2019.163222. https://www.osti.gov/servlets/purl/1616318.
@article{osti_1616318,
title = {Performance of new radiation-tolerant thin planar and 3D columnar n + on p silicon pixel sensors up to a maximum fluence of ~5×1015 n eq /cm 2},
author = {Boscardin, M. and Ceccarelli, R. and Dalla Betta, G. F. and Darbo, G. and Dinardo, M. E. and Giacomini, G. and Menasce, D. and Mendicino, R. and Meschini, M. and Messineo, A. and Moroni, L. and Rivera, R. and Ronchin, S. and Sultan, D. M. S. and Uplegger, L. and Viliani, L. and Zoi, I. and Zuolo, D.},
abstractNote = {The High Luminosity upgrade of the CERN Large Hadron Collider (HL-LHC) calls for new high radiation-tolerant solid-state pixel sensors, capable of surviving irradiation fluences up to a few 1016 neq/cm2 at ~3 cm from the interaction point. The INFN ATLAS-CMS joint research activity, in collaboration with Fondazione Bruno Kessler, is aiming at the development of thin n+ on p type pixel sensors to be operated at the HL-LHC. The R&D covers both planar and 3D pixel devices made on substrates obtained by the Direct Wafer Bonding technique. The active thickness of the planar sensors studied in this paper is 100μm or 130μm, that of 3D sensors 130μm. First prototypes of hybrid modules, bump-bonded to the present CMS readout chips (PSI46 digital), have been characterized in beam tests. Finally, first results on their performance before and after irradiation up to a maximum fluence of ~5×1015 neq/cm2 are reported in this article.},
doi = {10.1016/j.nima.2019.163222},
journal = {Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment},
number = C,
volume = 953,
place = {United States},
year = {2019},
month = {12}
}

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