Aluminum Oxide Passivating Tunneling Interlayers for Molybdenum Oxide Hole-Selective Contacts
Abstract
Aluminum oxide thin films fabricated via atomic layer deposition are introduced as passivating tunneling interlayers between hole-selective molybdenum oxide contacts and silicon absorbers. Surface recombination velocity and specific contact resistivity are reported as a function of Al2O3 thickness. The effects of substrate chemical pretreatment, the thermal history of the Al2O3 layers prior to MoOx deposition, and the thermal history of the completed Al2O3/MoOx stacks were also investigated. When an SiOx/Al2O3 passivating stack was incorporated and the completed test structure was annealed at 200 °C, the observed recombination velocities were reduced from ~10 000 cm/s for an unpassivated (initially hydrogen-terminated) Si/MoOx direct contact to ~500 cm/s, while maintaining a contact resistivity at or below 0.1 Ω·cm2. Finally, the data demonstrate the capability of ultrathin Al2O3 to improve Si/MoOx contact properties and may be of interest in the design of future Si heterojunctions.
- Publication Date:
- Research Org.:
- Lehigh Univ., Bethlehem, PA (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- OSTI Identifier:
- 1615673
- Grant/Contract Number:
- EE0008176
- Resource Type:
- Accepted Manuscript
- Journal Name:
- IEEE Journal of Photovoltaics
- Additional Journal Information:
- Journal Volume: 10; Journal Issue: 3; Journal ID: ISSN 2156-3381
- Publisher:
- IEEE
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; tunneling; silicon; passivation; molybdenum oxide; photovoltaics; aluminum oxide; atomic layer deposition; contact passivation
Citation Formats
Davis, Benjamin E., and Strandwitz, Nicholas C. Aluminum Oxide Passivating Tunneling Interlayers for Molybdenum Oxide Hole-Selective Contacts. United States: N. p., 2020.
Web. doi:10.1109/JPHOTOV.2020.2973447.
Davis, Benjamin E., & Strandwitz, Nicholas C. Aluminum Oxide Passivating Tunneling Interlayers for Molybdenum Oxide Hole-Selective Contacts. United States. https://doi.org/10.1109/JPHOTOV.2020.2973447
Davis, Benjamin E., and Strandwitz, Nicholas C. Wed .
"Aluminum Oxide Passivating Tunneling Interlayers for Molybdenum Oxide Hole-Selective Contacts". United States. https://doi.org/10.1109/JPHOTOV.2020.2973447. https://www.osti.gov/servlets/purl/1615673.
@article{osti_1615673,
title = {Aluminum Oxide Passivating Tunneling Interlayers for Molybdenum Oxide Hole-Selective Contacts},
author = {Davis, Benjamin E. and Strandwitz, Nicholas C.},
abstractNote = {Aluminum oxide thin films fabricated via atomic layer deposition are introduced as passivating tunneling interlayers between hole-selective molybdenum oxide contacts and silicon absorbers. Surface recombination velocity and specific contact resistivity are reported as a function of Al2O3 thickness. The effects of substrate chemical pretreatment, the thermal history of the Al2O3 layers prior to MoOx deposition, and the thermal history of the completed Al2O3/MoOx stacks were also investigated. When an SiOx/Al2O3 passivating stack was incorporated and the completed test structure was annealed at 200 °C, the observed recombination velocities were reduced from ~10 000 cm/s for an unpassivated (initially hydrogen-terminated) Si/MoOx direct contact to ~500 cm/s, while maintaining a contact resistivity at or below 0.1 Ω·cm2. Finally, the data demonstrate the capability of ultrathin Al2O3 to improve Si/MoOx contact properties and may be of interest in the design of future Si heterojunctions.},
doi = {10.1109/JPHOTOV.2020.2973447},
journal = {IEEE Journal of Photovoltaics},
number = 3,
volume = 10,
place = {United States},
year = {Wed Feb 26 00:00:00 EST 2020},
month = {Wed Feb 26 00:00:00 EST 2020}
}
Search WorldCat to find libraries that may hold this journalWeb of Science