Dual wavelength operation of the GaSb-based Y-branch distributed Bragg reflector lasers near 2.1 μm

Journal Article · 16 January 2020 · Semiconductor Science and Technology

DOI: https://doi.org/10.1088/1361-6641/ab63bc · OSTI ID:1615593

Jiang, J.  ^[1]; Shterengas, L. ^[1]; Hosoda, T. ^[1]; Stein, A.  ^[2]; Belyanin, A. ^[3]; Kipshidze, G. ^[1]; Belenky, G. ^[1]

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1. State Univ. of New York (SUNY), Stony Brook, NY (United States)
2. Brookhaven National Lab. (BNL), Upton, NY (United States)
3. Texas A & M Univ., College Station, TX (United States)

The GaSb-based diode lasers operating simultaneously at two wavelengths near 2.1 μm have been designed and fabricated. The Y-branch devices used the 6th order distributed Bragg reflectors (DBR) to provide spectrally selective feedback. The laser active region contained two asymmetric quantum wells with allowed optical transitions between two lowest electron (e1 and e2) and top hole (hh1) subbands. The laser emission lines loosely matched the e1-hh1 and e2-hh1 optical transitions with separation corresponding to ~3.1 THz. Finally, the 10 μm wide deeply etched straight ridge DBR lasers demonstrated stable single mode operation with more than 50 mW of output power.

• Research Organization: Brookhaven National Laboratory (BNL), Upton, NY (United States)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Science Foundation (NSF)
• Grant/Contract Number: SC0012704
• OSTI ID: 1615593
• Report Number(s): BNL--213824-2020-JAAM
• Journal Information: Semiconductor Science and Technology, Journal Name: Semiconductor Science and Technology Journal Issue: 2 Vol. 35; ISSN 0268-1242
• Publisher: IOP PublishingCopyright Statement
• Country of Publication: United States
• Language: English