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Title: Dual wavelength operation of the GaSb-based Y-branch distributed Bragg reflector lasers near 2.1 μm

Abstract

The GaSb-based diode lasers operating simultaneously at two wavelengths near 2.1 μm have been designed and fabricated. The Y-branch devices used the 6th order distributed Bragg reflectors (DBR) to provide spectrally selective feedback. The laser active region contained two asymmetric quantum wells with allowed optical transitions between two lowest electron (e1 and e2) and top hole (hh1) subbands. The laser emission lines loosely matched the e1-hh1 and e2-hh1 optical transitions with separation corresponding to ~3.1 THz. Finally, the 10 μm wide deeply etched straight ridge DBR lasers demonstrated stable single mode operation with more than 50 mW of output power.

Authors:
ORCiD logo [1];  [1];  [1]; ORCiD logo [2];  [3];  [1];  [1]
+ Show Author Affiliations
  1. State Univ. of New York (SUNY), Stony Brook, NY (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
  3. Texas A & M Univ., College Station, TX (United States)
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
OSTI Identifier:
1615593
Report Number(s):
BNL-213824-2020-JAAM
Journal ID: ISSN 0268-1242
Grant/Contract Number:  
SC0012704; ECCS-1707317US
Resource Type:
Accepted Manuscript
Journal Name:
Semiconductor Science and Technology
Additional Journal Information:
Journal Volume: 35; Journal Issue: 2; Journal ID: ISSN 0268-1242
Publisher:
IOP Publishing
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats

Jiang, J., Shterengas, L., Hosoda, T., Stein, A., Belyanin, A., Kipshidze, G., and Belenky, G. Dual wavelength operation of the GaSb-based Y-branch distributed Bragg reflector lasers near 2.1 μm. United States: N. p., 2020. Web. doi:10.1088/1361-6641/ab63bc.
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Jiang, J., Shterengas, L., Hosoda, T., Stein, A., Belyanin, A., Kipshidze, G., & Belenky, G. Dual wavelength operation of the GaSb-based Y-branch distributed Bragg reflector lasers near 2.1 μm. United States. https://doi.org/10.1088/1361-6641/ab63bc
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Jiang, J., Shterengas, L., Hosoda, T., Stein, A., Belyanin, A., Kipshidze, G., and Belenky, G. Fri . "Dual wavelength operation of the GaSb-based Y-branch distributed Bragg reflector lasers near 2.1 μm". United States. https://doi.org/10.1088/1361-6641/ab63bc. https://www.osti.gov/servlets/purl/1615593.
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@article{osti_1615593,
title = {Dual wavelength operation of the GaSb-based Y-branch distributed Bragg reflector lasers near 2.1 μm},
author = {Jiang, J. and Shterengas, L. and Hosoda, T. and Stein, A. and Belyanin, A. and Kipshidze, G. and Belenky, G.},
abstractNote = {The GaSb-based diode lasers operating simultaneously at two wavelengths near 2.1 μm have been designed and fabricated. The Y-branch devices used the 6th order distributed Bragg reflectors (DBR) to provide spectrally selective feedback. The laser active region contained two asymmetric quantum wells with allowed optical transitions between two lowest electron (e1 and e2) and top hole (hh1) subbands. The laser emission lines loosely matched the e1-hh1 and e2-hh1 optical transitions with separation corresponding to ~3.1 THz. Finally, the 10 μm wide deeply etched straight ridge DBR lasers demonstrated stable single mode operation with more than 50 mW of output power.},
doi = {10.1088/1361-6641/ab63bc},
journal = {Semiconductor Science and Technology},
number = 2,
volume = 35,
place = {United States},
year = {2020},
month = {1}
}
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Journal Article:
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Publisher's Version of Record
https://doi.org/10.1088/1361-6641/ab63bc
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Works referenced in this record:

Properties and fabrication of high-order Bragg gratings for wavelength stabilization of diode lasers
journal, April 2012

GaSb-based diode lasers with asymmetric coupled quantum wells
journal, August 2018

  • Jiang, Jiang; Shterengas, Leon; Hosoda, Takashi
  • Applied Physics Letters, Vol. 113, Issue 7
  • DOI: 10.1063/1.5046426

High-temperature, high-power, continuous-wave operation of buried heterostructure quantum-cascade lasers
journal, January 2004

  • Evans, A.; Yu, J. S.; David, J.
  • Applied Physics Letters, Vol. 84, Issue 3
  • DOI: 10.1063/1.1641174

Recent progress in terahertz difference-frequency quantum cascade laser sources
journal, September 2018

Room temperature continuous-wave operation of quantum-cascade lasers grown by metal organic vapour phase epitaxy
journal, January 2005

  • Troccoli, M.; Corzine, S.; Bour, D.
  • Electronics Letters, Vol. 41, Issue 19
  • DOI: 10.1049/el:20052626

High-Power 2.2-$\mu$m Diode Lasers With Heavily Strained Active Region
journal, May 2011

  • Liang, Rui; Chen, Jianfeng; Kipshidze, Gela
  • IEEE Photonics Technology Letters, Vol. 23, Issue 10
  • DOI: 10.1109/lpt.2011.2114647

Dual-wavelength diode laser with electrically adjustable wavelength distance at 785  nm
journal, January 2016

  • Sumpf, Bernd; Kabitzke, Julia; Fricke, Jörg
  • Optics Letters, Vol. 41, Issue 16
  • DOI: 10.1364/ol.41.003694
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