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Title: Giant defect emission enhancement from ZnO nanowires through desulfurization process

Abstract

Zinc oxide (ZnO) is a stable, direct bandgap semiconductor emitting in the UV with a multitude of technical applications. It is well known that ZnO emission can be shifted into the green for visible light applications through the introduction of defects. However, generating consistent and efficient green emission through this process is challenging, particularly given that the chemical or atomic origin of the green emission in ZnO is still under debate. In this work we present a new method, for which we coin term desulfurization, for creating green emitting ZnO with significantly enhanced quantum efficiency. Solution grown ZnO nanowires are partially converted to ZnS, then desulfurized back to ZnO, resulting in a highly controlled concentration of oxygen defects as determined by X-ray photoelectron spectroscopy and electron paramagnetic resonance. Using this controlled placement of oxygen vacancies we observe a greater than 40-fold enhancement of integrated emission intensity and explore the nature of this enhancement through low temperature photoluminescence experiments.

Authors:
ORCiD logo [1];  [2];  [2];  [3];  [4];  [5]; ORCiD logo [5];  [2]
+ Show Author Affiliations
  1. Univ. de Technologie de Troyes, Troyes (France). Inst. Charles Delaunay; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  2. Univ. de Technologie de Troyes, Troyes (France). Inst. Charles Delaunay
  3. Univ. de Versailles, Saint Quentin-en-Yveline, Versailles, (France)
  4. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  5. National Central Univ., Taoyuan (Taiwan)
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC); Chinese Scholarship Council; Ministry of Science and Technology of Taiwan (MOST); European Regional Development Fund
OSTI Identifier:
1615318
Grant/Contract Number:  
AC02-05CH11231; MOST-106-2112-M-008- 003-MY3
Resource Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 10; Journal Issue: 1; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Zhou, Junze, Nomenyo, Komla, Cesar, Clotaire Chevalier, Lusson, Alain, Schwartzberg, Adam, Yen, Chun-Chieh, Woon, Wei-Yen, and Lerondel, Gilles. Giant defect emission enhancement from ZnO nanowires through desulfurization process. United States: N. p., 2020. Web. doi:10.1038/s41598-020-61189-7.
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Zhou, Junze, Nomenyo, Komla, Cesar, Clotaire Chevalier, Lusson, Alain, Schwartzberg, Adam, Yen, Chun-Chieh, Woon, Wei-Yen, & Lerondel, Gilles. Giant defect emission enhancement from ZnO nanowires through desulfurization process. United States. https://doi.org/10.1038/s41598-020-61189-7
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Zhou, Junze, Nomenyo, Komla, Cesar, Clotaire Chevalier, Lusson, Alain, Schwartzberg, Adam, Yen, Chun-Chieh, Woon, Wei-Yen, and Lerondel, Gilles. Fri . "Giant defect emission enhancement from ZnO nanowires through desulfurization process". United States. https://doi.org/10.1038/s41598-020-61189-7. https://www.osti.gov/servlets/purl/1615318.
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@article{osti_1615318,
title = {Giant defect emission enhancement from ZnO nanowires through desulfurization process},
author = {Zhou, Junze and Nomenyo, Komla and Cesar, Clotaire Chevalier and Lusson, Alain and Schwartzberg, Adam and Yen, Chun-Chieh and Woon, Wei-Yen and Lerondel, Gilles},
abstractNote = {Zinc oxide (ZnO) is a stable, direct bandgap semiconductor emitting in the UV with a multitude of technical applications. It is well known that ZnO emission can be shifted into the green for visible light applications through the introduction of defects. However, generating consistent and efficient green emission through this process is challenging, particularly given that the chemical or atomic origin of the green emission in ZnO is still under debate. In this work we present a new method, for which we coin term desulfurization, for creating green emitting ZnO with significantly enhanced quantum efficiency. Solution grown ZnO nanowires are partially converted to ZnS, then desulfurized back to ZnO, resulting in a highly controlled concentration of oxygen defects as determined by X-ray photoelectron spectroscopy and electron paramagnetic resonance. Using this controlled placement of oxygen vacancies we observe a greater than 40-fold enhancement of integrated emission intensity and explore the nature of this enhancement through low temperature photoluminescence experiments.},
doi = {10.1038/s41598-020-61189-7},
journal = {Scientific Reports},
number = 1,
volume = 10,
place = {United States},
year = {2020},
month = {3}
}
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Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1038/s41598-020-61189-7
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Figures / Tables:

Figure 1 Figure 1: Sulfurization characterization: (a) XRD patterns of the as grown ZnO and sulfurized ZnO. The point symbols denote the (002) and (103) crystalline planes of the hexagonal structure of ZnO and the star symbols for that of ZnS. (b) The SEM images of as grown ZnO and sulfurized ZnOmore » taken from the top and cross-section (inset) sides, the scale bars are 250 nm.« less
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