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Title: Aspects of the synthesis of thin film superconducting infinite-layer nickelates

Journal Article · · APL Materials
DOI: https://doi.org/10.1063/5.0005103 · OSTI ID:1614861

The recent observation of superconductivity in Nd0.8Sr0.2NiO2 calls for further investigation and optimization of the synthesis of this infinite-layer nickelate structure. Here, we present our current understanding of important aspects of the growth of the parent perovskite compound via pulsed laser deposition on SrTiO3 (001) substrates and the subsequent topotactic reduction. We find that to achieve single-crystalline, single-phase superconducting Nd0.8Sr0.2NiO2, it is essential that the precursor perovskite Nd0.8Sr0.2NiO3 thin film is stabilized with no visible impurity phases; in particular, a Ruddlesden–Popper-type secondary phase is often observed. We have further investigated the evolution of the soft-chemistry topotactic reduction conditions to realize full transformation to the infinite-layer structure with no film decomposition or formation of other phases. We find that capping the nickelate film with a subsequent SrTiO3 layer provides an epitaxial template to the top region of the nickelate film, much like the substrate. Thus, for currently optimized growth conditions, we can stabilize superconducting single-phase Nd0.8Sr0.2NiO2 (001) epitaxial thin films up to ~10 nm.

Research Organization:
SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States); Stanford Univ., CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; Swiss National Science Foundation (SNF); Gordon and Betty Moore Foundation; US Air Force Office of Scientific Research (AFOSR); Packard Foundation; National Science Foundation (NSF); Weill Institute; Kavli Institute at Cornell; USDOE
Grant/Contract Number:
AC02-76SF00515; P2GEP2_168277; GBMF4415; FA 9550-16-1-0305; DMR-1539918; DMR-1719875; NSF-MRI-1429155
OSTI ID:
1614861
Alternate ID(s):
OSTI ID: 1632934
Journal Information:
APL Materials, Vol. 8, Issue 4; ISSN 2166-532X
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 92 works
Citation information provided by
Web of Science

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