skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Quantum transport properties of monolayer graphene with antidot lattice

Abstract

Quantum transport properties in monolayer graphene are sensitive to structural modifications. In this work we find that the introduction of a hexagonal lattice of antidots has a wide impact on weak localization and Shubnikov-de Haas (SdH) oscillation of graphene. The antidot lattice reduces both phase coherence and intervalley scattering length. Remarkably, even with softened intervalley scattering, i.e., the phase-breaking time is shorter than intervalley scattering time, coherence between time reversed states remains adequate to retain weak localization, an offbeat and rarely reported occurrence. Whereas SdH oscillation is boosted by the antidot lattice, the amplitude of the SdH signal rises rapidly with the increasing antidot radius. But both effective mass and carrier density are reduced in a larger antidot lattice. A bandgap of ~10 meV is opened. The antidot lattice is an effective dopant-free way to manipulate electronic properties in graphene.

Authors:
ORCiD logo [1];  [2];  [3];  [4];  [2];  [3]
  1. Yale Univ. West Campus, West Haven, CT (United States); Univ. of South Carolina, Columbia, SC (United States)
  2. Benedict College, Columbia, SC (United States)
  3. Univ. of South Carolina, Columbia, SC (United States)
  4. Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)
Publication Date:
Research Org.:
Florida A & M University, Tallahassee, FL (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF); State of Florida
OSTI Identifier:
1614546
Alternate Identifier(s):
OSTI ID: 1558710
Grant/Contract Number:  
NA0002630; DMR-1157490
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 126; Journal Issue: 8; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Physics; Crystal lattices; Magnetic ordering; Electronic bandstructure; Transport properties; Shubnikov-de Haas effect; Graphene; Resistivity measurements; Landau levels; Quantum coherence; Geometric phases

Citation Formats

Wang, Leizhi, Yin, Ming, Zhong, Bochen, Jaroszynski, Jan, Mbamalu, Godwin, and Datta, Timir. Quantum transport properties of monolayer graphene with antidot lattice. United States: N. p., 2019. Web. https://doi.org/10.1063/1.5100813.
Wang, Leizhi, Yin, Ming, Zhong, Bochen, Jaroszynski, Jan, Mbamalu, Godwin, & Datta, Timir. Quantum transport properties of monolayer graphene with antidot lattice. United States. https://doi.org/10.1063/1.5100813
Wang, Leizhi, Yin, Ming, Zhong, Bochen, Jaroszynski, Jan, Mbamalu, Godwin, and Datta, Timir. Fri . "Quantum transport properties of monolayer graphene with antidot lattice". United States. https://doi.org/10.1063/1.5100813. https://www.osti.gov/servlets/purl/1614546.
@article{osti_1614546,
title = {Quantum transport properties of monolayer graphene with antidot lattice},
author = {Wang, Leizhi and Yin, Ming and Zhong, Bochen and Jaroszynski, Jan and Mbamalu, Godwin and Datta, Timir},
abstractNote = {Quantum transport properties in monolayer graphene are sensitive to structural modifications. In this work we find that the introduction of a hexagonal lattice of antidots has a wide impact on weak localization and Shubnikov-de Haas (SdH) oscillation of graphene. The antidot lattice reduces both phase coherence and intervalley scattering length. Remarkably, even with softened intervalley scattering, i.e., the phase-breaking time is shorter than intervalley scattering time, coherence between time reversed states remains adequate to retain weak localization, an offbeat and rarely reported occurrence. Whereas SdH oscillation is boosted by the antidot lattice, the amplitude of the SdH signal rises rapidly with the increasing antidot radius. But both effective mass and carrier density are reduced in a larger antidot lattice. A bandgap of ~10 meV is opened. The antidot lattice is an effective dopant-free way to manipulate electronic properties in graphene.},
doi = {10.1063/1.5100813},
journal = {Journal of Applied Physics},
number = 8,
volume = 126,
place = {United States},
year = {2019},
month = {8}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 2 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Experimental observation of the quantum Hall effect and Berry's phase in graphene
journal, November 2005

  • Zhang, Yuanbo; Tan, Yan-Wen; Stormer, Horst L.
  • Nature, Vol. 438, Issue 7065, p. 201-204
  • DOI: 10.1038/nature04235

Weak Localization in Bilayer Graphene
journal, April 2007


Giant negative magnetoresistance and a transition from strong to weak localization in hydrogenated graphene
journal, May 2012


Bandgap Opening in Graphene Antidot Lattices: The Missing Half
journal, April 2011

  • Ouyang, Fangping; Peng, Shenglin; Liu, Zhongfan
  • ACS Nano, Vol. 5, Issue 5
  • DOI: 10.1021/nn200580w

Inelastic scattering in a monolayer graphene sheet: A weak-localization study
journal, September 2008


Evidence for Spin-Flip Scattering and Local Moments in Dilute Fluorinated Graphene
journal, June 2012


Weak-Localization Magnetoresistance and Valley Symmetry in Graphene
journal, October 2006


Transition between Electron Localization and Antilocalization in Graphene
journal, November 2009


Quantum oscillations and quantum Hall effect in epitaxial graphene
journal, May 2010


Enhanced Shubnikov–De Haas Oscillation in Nitrogen-Doped Graphene
journal, June 2015


Weak localization and transport gap in graphene antidot lattices
journal, September 2009


Strong Suppression of Weak Localization in Graphene
journal, July 2006


Control of Carrier Type and Density in Exfoliated Graphene by Interface Engineering
journal, December 2010

  • Wang, Rui; Wang, Shengnan; Zhang, Dongdong
  • ACS Nano, Vol. 5, Issue 1
  • DOI: 10.1021/nn102236x

Lithographic band structure engineering of graphene
journal, February 2019

  • Jessen, Bjarke S.; Gammelgaard, Lene; Thomsen, Morten R.
  • Nature Nanotechnology, Vol. 14, Issue 4
  • DOI: 10.1038/s41565-019-0376-3

Direct observation of a widely tunable bandgap in bilayer graphene
journal, June 2009

  • Zhang, Yuanbo; Tang, Tsung-Ta; Girit, Caglar
  • Nature, Vol. 459, Issue 7248
  • DOI: 10.1038/nature08105

Electronic properties of disordered graphene antidot lattices
journal, February 2013


Carbon Nanotubes--the Route Toward Applications
journal, August 2002

  • Baughman, Ray H.; Zakhidov, Anvar A.; de Heer, Walt A.
  • Science, Vol. 297, Issue 5582, p. 787-792
  • DOI: 10.1126/science.1060928

Geometric dependence of transport and universal behavior in three dimensional carbon nanostructures
journal, September 2016

  • Wang, Leizhi; Yin, Ming; Jaroszynski, Jan
  • Applied Physics Letters, Vol. 109, Issue 12
  • DOI: 10.1063/1.4963261

Energy loss rates of hot Dirac fermions in epitaxial, exfoliated, and CVD graphene
journal, January 2013


Weak Localization in Graphene Flakes
journal, February 2008


Graphene nanomesh
journal, February 2010

  • Bai, Jingwei; Zhong, Xing; Jiang, Shan
  • Nature Nanotechnology, Vol. 5, Issue 3
  • DOI: 10.1038/nnano.2010.8

Electronic Confinement and Coherence in Patterned Epitaxial Graphene
journal, May 2006


Electron–Hole Symmetry Breaking in Charge Transport in Nitrogen-Doped Graphene
journal, April 2017


The rise of graphene
journal, March 2007

  • Geim, A. K.; Novoselov, K. S.
  • Nature Materials, Vol. 6, Issue 3, p. 183-191
  • DOI: 10.1038/nmat1849

Fabrication and Characterization of Large-Area, Semiconducting Nanoperforated Graphene Materials
journal, April 2010

  • Kim, Myungwoong; Safron, Nathaniel S.; Han, Eungnak
  • Nano Letters, Vol. 10, Issue 4, p. 1125-1131
  • DOI: 10.1021/nl9032318

Graphene Antidot Lattices: Designed Defects and Spin Qubits
journal, April 2008


Electronic and transport properties in geometrically disordered graphene antidot lattices
journal, March 2015


Quantum Transport Evidence for the Three-Dimensional Dirac Semimetal Phase in Cd 3 As 2
journal, December 2014


The electronic properties of graphene
journal, January 2009

  • Castro Neto, A. H.; Guinea, F.; Peres, N. M. R.
  • Reviews of Modern Physics, Vol. 81, Issue 1, p. 109-162
  • DOI: 10.1103/RevModPhys.81.109

Ballistic Transport in Graphene Antidot Lattices
journal, November 2015


Raman Spectrum of Graphene and Graphene Layers
journal, October 2006


Direct Observation of a Gate Tunable Band Gap in Electrical Transport in ABC-Trilayer Graphene
journal, June 2015


Perspectives on Carbon Nanotubes and Graphene Raman Spectroscopy
journal, March 2010

  • Dresselhaus, Mildred S.; Jorio, Ado; Hofmann, Mario
  • Nano Letters, Vol. 10, Issue 3
  • DOI: 10.1021/nl904286r

Scatterings and Quantum Effects in ( Al , In ) N / GaN Heterostructures for High-Power and High-Frequency Electronics
journal, February 2018


Epitaxial Graphene Nanoribbon Array Fabrication Using BCP-Assisted Nanolithography
journal, July 2012

  • Liu, Guanxiong; Wu, Yanqing; Lin, Yu-Ming
  • ACS Nano, Vol. 6, Issue 8
  • DOI: 10.1021/nn301515a

Strain-induced suppression of weak localization in CVD-grown graphene
journal, November 2012


Two-dimensional gas of massless Dirac fermions in graphene
journal, November 2005

  • Novoselov, K. S.; Geim, A. K.; Morozov, S. V.
  • Nature, Vol. 438, Issue 7065, p. 197-200
  • DOI: 10.1038/nature04233

The rise of graphene
book, August 2009

  • Rodgers, Peter; Geim, A. K.; Novoselov, K. S.
  • Nanoscience and Technology: A Collection of Reviews from Nature Journals, p. 11-19
  • DOI: 10.1142/9789814287005_0002