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Title: Creating localized plasma waves by ionization of doped semiconductors

Journal Article · · Physical Review E

Localized plasma waves can be generated by suddenly ionizing extrinsic semiconductors with spatially periodic dopant densities. The built-in electrostatic potentials at the metallurgical junctions, combined with electron density ripples, offer the exact initial condition for exciting long-lasting plasma waves upon ionization. This method can create plasma waves with a frequency between a few terahertz to subpetahertz without substantial damping. Here, the lingering plasma waves can seed backward Raman amplification in a wide range of resonance frequencies up to the extreme ultraviolet regime. Chirped wave vectors and curved wave fronts allow focusing the amplified beam in both longitudinal and transverse dimensions. The main limitation to this method appears to be obtaining sufficiently low plasma density from solid-state materials to avoid collisional damping.

Research Organization:
Princeton Univ., NJ (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
NA0003871; NA0002948
OSTI ID:
1614435
Alternate ID(s):
OSTI ID: 1524468
Journal Information:
Physical Review E, Vol. 99, Issue 6; ISSN 2470-0045
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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