Strain-fluctuation-induced near quantization of valley Hall conductivity in graphene systems

Shan, Wen-Yu; Xiao, Di

doi:10.1103/physrevb.99.205416

Title: Strain-fluctuation-induced near quantization of valley Hall conductivity in graphene systems

Journal Article · 14 May 2019 · Physical Review. B

DOI: https://doi.org/10.1103/physrevb.99.205416 · OSTI ID:1613235

Shan, Wen-Yu ^[1]; Xiao, Di ^[2]

Guangzhou Univ. (China); Carnegie Mellon Univ., Pittsburgh, PA (United States)
Carnegie Mellon Univ., Pittsburgh, PA (United States)

We develop a theory of the valley Hall effect in high-quality graphene samples, in which strain-fluctuation-induced random gauge potentials have been suggested as the dominant source of disorder. We find a near-quantized value of valley Hall conductivity in the band transport regime, which originates from an enhanced side jump of a Dirac electron when it scatters off the gauge potential. By assuming a small residue charge density our theory reproduces qualitatively the temperature and gap dependence of the observed valley Hall effect at the charge neutral point. Furthermore, our study suggests that the valley Hall effect in graphene systems represents a new paradigm for the anomalous Hall physics where gauge disorder plays an important role.

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Programmable Quantum Materials (Pro-QM); Columbia Univ., New York, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0019443; Pro-QM EFRC (DE-SC0019443)

OSTI ID:: 1613235

Alternate ID(s):: OSTI ID: 1512548

Journal Information:: Physical Review. B, Vol. 99, Issue 20; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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75 CONDENSED MATTER PHYSICS
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Title: Strain-fluctuation-induced near quantization of valley Hall conductivity in graphene systems

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