Robust Coupling between Structural and Electronic Transitions in a Mott Material

Kalcheim, Yoav; Butakov, Nikita; Vargas, Nicolas M.; Lee, Min-Han; del Valle, Javier; Trastoy, Juan; Salev, Pavel; Schuller, Jon; Schuller, Ivan K.

doi:10.1103/physrevlett.122.057601

Title: Robust Coupling between Structural and Electronic Transitions in a Mott Material

Journal Article · 04 February 2019 · Physical Review Letters

DOI: https://doi.org/10.1103/physrevlett.122.057601 · OSTI ID:1613163

Kalcheim, Yoav ^[1]; Butakov, Nikita ^[2]; Vargas, Nicolas M. ^[1]; Lee, Min-Han ^[1]; del Valle, Javier ^[1]; Trastoy, Juan ^[3]; Salev, Pavel ^[1]; Schuller, Jon ^[2]; Schuller, Ivan K. ^[1]

Univ. of California, San Diego, La Jolla, CA (United States)
Univ. of California, Santa Barbara, CA (United States)
Univ. of California, San Diego, La Jolla, CA (United States); Univ. Paris-Saclay, Palaiseau (France)

The interdependences of different phase transitions in Mott materials are fundamental to the understanding of the mechanisms behind them. One of the most important relations is between the ubiquitous structural and electronic transitions. Using IR spectroscopy, optical reflectivity, and x-ray diffraction, we show that the metal-insulator transition is coupled to the structural phase transition in V₂O₃ films. This coupling persists even in films with widely varying transition temperatures and strains. Our findings are in contrast to recent experimental findings and theoretical predictions. Using V₂O₃ as a model system, we discuss the pitfalls in measurements of the electronic and structural states of Mott materials in general, calling for a critical examination of previous work in this field. Furthermore, our findings also have important implications for the performance of Mott materials in next-generation neuromorphic computing technology.

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Quantum Materials for Energy Efficient Neuromorphic Computing (Q-MEEN-C); Univ. of California, San Diego, CA (United States); University of California, San Diego, CA (United States)

Sponsoring Organization:: Office of Naval Research (ONR); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0019273

OSTI ID:: 1613163

Journal Information:: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 5 Vol. 122; ISSN 0031-9007

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Robust Coupling between Structural and Electronic Transitions in a Mott Material

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