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Title: Inorganic vacancy-ordered perovskite Cs2SnCl6:Bi/GaN heterojunction photodiode for narrowband, visible-blind UV detection

Abstract

In this work, a heterojunction photodiode was fabricated from Bi doped Cs2SnCl6 nanoparticles (Cs2SnCl6:Bi NPs) spin-coated on an epitaxially grown GaN substrate. With the back illumination configuration, the heterojunction photodiode demonstrated excellent narrow-band UV sensing capability with a full wavelength of half maximum of 18 nm and a maximum detectivity of 1.2 × 1012 jones, which is promising for biomedical applications. In addition to the excellent narrow band UV sensitivity, the device also demonstrated a large linear dynamic range of 71 decibels (dB) and a fast photoresponse speed (a rise time of 0.75 μs and a fall time of 0.91 μs). The excellent performance is attributed to excellent carrier separation efficiency at the heterojunction interface and improved carrier collection efficiency through the multi-walled carbon nanotube (MWCNT) network. All the above advantages are of great importance for commercial deployment of perovskite-based photodetectors.

Authors:
ORCiD logo [1]; ORCiD logo [1];  [1];  [1];  [1]
  1. Rensselaer Polytechnic Inst., Troy, NY (United States)
Publication Date:
Research Org.:
The Ohio State Univ., Columbus, OH (United States); Energy Frontier Research Centers (EFRC) (United States). Center for Performance and Design of Nuclear Waste Forms and Containers (WastePD)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1612667
Alternate Identifier(s):
OSTI ID: 1562336
Grant/Contract Number:  
SC0016584
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 115; Journal Issue: 12; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Physics; Photodetectors; Heterostructures; Perovskites; Nanoparticles

Citation Formats

Shao, Dali, Zhu, Weiguang, Xin, Guoqing, Lian, Jie, and Sawyer, Shayla. Inorganic vacancy-ordered perovskite Cs2SnCl6:Bi/GaN heterojunction photodiode for narrowband, visible-blind UV detection. United States: N. p., 2019. Web. https://doi.org/10.1063/1.5123226.
Shao, Dali, Zhu, Weiguang, Xin, Guoqing, Lian, Jie, & Sawyer, Shayla. Inorganic vacancy-ordered perovskite Cs2SnCl6:Bi/GaN heterojunction photodiode for narrowband, visible-blind UV detection. United States. https://doi.org/10.1063/1.5123226
Shao, Dali, Zhu, Weiguang, Xin, Guoqing, Lian, Jie, and Sawyer, Shayla. Tue . "Inorganic vacancy-ordered perovskite Cs2SnCl6:Bi/GaN heterojunction photodiode for narrowband, visible-blind UV detection". United States. https://doi.org/10.1063/1.5123226. https://www.osti.gov/servlets/purl/1612667.
@article{osti_1612667,
title = {Inorganic vacancy-ordered perovskite Cs2SnCl6:Bi/GaN heterojunction photodiode for narrowband, visible-blind UV detection},
author = {Shao, Dali and Zhu, Weiguang and Xin, Guoqing and Lian, Jie and Sawyer, Shayla},
abstractNote = {In this work, a heterojunction photodiode was fabricated from Bi doped Cs2SnCl6 nanoparticles (Cs2SnCl6:Bi NPs) spin-coated on an epitaxially grown GaN substrate. With the back illumination configuration, the heterojunction photodiode demonstrated excellent narrow-band UV sensing capability with a full wavelength of half maximum of 18 nm and a maximum detectivity of 1.2 × 1012 jones, which is promising for biomedical applications. In addition to the excellent narrow band UV sensitivity, the device also demonstrated a large linear dynamic range of 71 decibels (dB) and a fast photoresponse speed (a rise time of 0.75 μs and a fall time of 0.91 μs). The excellent performance is attributed to excellent carrier separation efficiency at the heterojunction interface and improved carrier collection efficiency through the multi-walled carbon nanotube (MWCNT) network. All the above advantages are of great importance for commercial deployment of perovskite-based photodetectors.},
doi = {10.1063/1.5123226},
journal = {Applied Physics Letters},
number = 12,
volume = 115,
place = {United States},
year = {2019},
month = {9}
}

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