Inorganic vacancy-ordered perovskite Cs2SnCl6:Bi/GaN heterojunction photodiode for narrowband, visible-blind UV detection

Shao, Dali; Zhu, Weiguang; Xin, Guoqing; Lian, Jie; Sawyer, Shayla

doi:10.1063/1.5123226

Title: Inorganic vacancy-ordered perovskite Cs₂SnCl₆:Bi/GaN heterojunction photodiode for narrowband, visible-blind UV detection

Abstract

In this work, a heterojunction photodiode was fabricated from Bi doped Cs₂SnCl₆ nanoparticles (Cs₂SnCl₆:Bi NPs) spin-coated on an epitaxially grown GaN substrate. With the back illumination configuration, the heterojunction photodiode demonstrated excellent narrow-band UV sensing capability with a full wavelength of half maximum of 18 nm and a maximum detectivity of 1.2 × 10¹² jones, which is promising for biomedical applications. In addition to the excellent narrow band UV sensitivity, the device also demonstrated a large linear dynamic range of 71 decibels (dB) and a fast photoresponse speed (a rise time of 0.75 μs and a fall time of 0.91 μs). The excellent performance is attributed to excellent carrier separation efficiency at the heterojunction interface and improved carrier collection efficiency through the multi-walled carbon nanotube (MWCNT) network. All the above advantages are of great importance for commercial deployment of perovskite-based photodetectors.

Authors:

^[1];

^[1]; Xin, Guoqing ^[1]; Lian, Jie ^[1]; Sawyer, Shayla ^[1]

Rensselaer Polytechnic Inst., Troy, NY (United States)

Publication Date:: 2019-09-17

Research Org.:: The Ohio State Univ., Columbus, OH (United States); Energy Frontier Research Centers (EFRC) (United States). Center for Performance and Design of Nuclear Waste Forms and Containers (WastePD); Rensselaer Polytechnic Inst., Troy, NY (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1612667

Alternate Identifier(s):: OSTI ID: 1562336; OSTI ID: 1865542

Grant/Contract Number:: SC0016584

Resource Type:: Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 115; Journal Issue: 12; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Physics; Photodetectors; Heterostructures; Perovskites; Nanoparticles; 12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE WASTES FROM NUCLEAR FACILITIES

Citation Formats


                    Shao, Dali, Zhu, Weiguang, Xin, Guoqing, Lian, Jie, and Sawyer, Shayla. Inorganic vacancy-ordered perovskite Cs2SnCl6:Bi/GaN heterojunction photodiode for narrowband, visible-blind UV detection.  United States: N. p., 2019. 
Web.  doi:10.1063/1.5123226.

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                    Shao, Dali, Zhu, Weiguang, Xin, Guoqing, Lian, Jie, & Sawyer, Shayla. Inorganic vacancy-ordered perovskite Cs2SnCl6:Bi/GaN heterojunction photodiode for narrowband, visible-blind UV detection.  United States.  https://doi.org/10.1063/1.5123226

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                    Shao, Dali, Zhu, Weiguang, Xin, Guoqing, Lian, Jie, and Sawyer, Shayla. Tue .  
"Inorganic vacancy-ordered perovskite Cs2SnCl6:Bi/GaN heterojunction photodiode for narrowband, visible-blind UV detection".  United States.  https://doi.org/10.1063/1.5123226.  https://www.osti.gov/servlets/purl/1612667.

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@article{osti_1612667,

  title        = {Inorganic vacancy-ordered perovskite Cs2SnCl6:Bi/GaN heterojunction photodiode for narrowband, visible-blind UV detection},

  author       = {Shao, Dali and Zhu, Weiguang and Xin, Guoqing and Lian, Jie and Sawyer, Shayla},

  abstractNote = {In this work, a heterojunction photodiode was fabricated from Bi doped Cs2SnCl6 nanoparticles (Cs2SnCl6:Bi NPs) spin-coated on an epitaxially grown GaN substrate. With the back illumination configuration, the heterojunction photodiode demonstrated excellent narrow-band UV sensing capability with a full wavelength of half maximum of 18 nm and a maximum detectivity of 1.2 × 1012 jones, which is promising for biomedical applications. In addition to the excellent narrow band UV sensitivity, the device also demonstrated a large linear dynamic range of 71 decibels (dB) and a fast photoresponse speed (a rise time of 0.75 μs and a fall time of 0.91 μs). The excellent performance is attributed to excellent carrier separation efficiency at the heterojunction interface and improved carrier collection efficiency through the multi-walled carbon nanotube (MWCNT) network. All the above advantages are of great importance for commercial deployment of perovskite-based photodetectors.},

  doi          = {10.1063/1.5123226},

  journal      = {Applied Physics Letters},

  number       = 12,

  volume       = 115,

  place        = {United States},

  year         = {2019},

  month        = {9}

}

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