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Title: Flexural phonons in supported graphene: from pinning to localization

Journal Article · · Scientific Reports
ORCiD logo [1]; ORCiD logo [2];  [3]
  1. Texas A & M Univ., College Station, TX (United States); DOE/OSTI
  2. L. D. Landau Inst. for Theoretical Physics, Moscow (Russian Federation); Skolkovo Institute of Science and Technology (Russian Federation)
  3. Texas A & M Univ., College Station, TX (United States); Weizmann Inst. of Science, Rehovot (Israel)

We identify graphene layer on a disordered substrate as a system where localization of phonons can be observed. Generally, observation of localization for scattering waves is not simple, because the Rayleigh scattering is inversely proportional to a high power of wavelength. The situation is radically different for the out of plane vibrations, so-called flexural phonons, scattered by pinning centers induced by a substrate. In this case, the scattering time for vanishing wave vector tends to a finite limit. One may, therefore, expect that physics of the flexural phonons exhibits features characteristic for electron localization in two dimensions, albeit without complications caused by the electron-electron interactions. We confirm this idea by calculating statistical properties of the Anderson localization of flexural phonons for a model of elastic sheet in the presence of the pinning centers. Finally, we discuss possible manifestations of the flexural phonons, including the localized ones, in the electronic thermal conductance.

Research Organization:
Texas A & M Univ., College Station, TX (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
Grant/Contract Number:
SC0014154
OSTI ID:
1612099
Journal Information:
Scientific Reports, Journal Name: Scientific Reports Journal Issue: 1 Vol. 8; ISSN 2045-2322
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United States
Language:
English

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