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Title: Modulating Blue Phosphorene by Synergetic Codoping: Indirect to Direct Gap Transition and Strong Bandgap Bowing

Journal Article · · Advanced Functional Materials
ORCiD logo [1];  [2];  [2];  [2];  [3];  [2]; ORCiD logo [2];  [4]
  1. Shenzhen Univ. (China); Hong Kong University of Science and Technology (HKUST) (Hong Kong); DOE/OSTI
  2. Shenzhen Univ. (China)
  3. Hong Kong University of Science and Technology (HKUST) (Hong Kong)
  4. Rice Univ., Houston, TX (United States)

The structural and electronic properties of synergistically modified blue phosphorene (BP) is investigated. The inversion and threefold rotational symmetries of BP are broken. The codoping of group IV and VI impurities can turn monolayer BP into direct bandgap semiconductors. The underlying physical mechanism is that group IV and VI impurities tailor the valence band maximum and conduction band minimum, respectively, and move them to Γ. All the bandgaps of monolayer, nanoribbons, and quantum dots of BP can be modulated in a wide range, and the strong bandgap bowing is found. In addition, the Coulomb interactions between the screened impurities are revealed. Lower formation energies indicate the fabricating practicability of synergeticly modified BP. Finally, spin–orbit coupling (SOC) can also be tuned by the introduction of impurities.

Research Organization:
Rice Univ., Houston, TX (United States)
Sponsoring Organization:
Hong Kong RGC; National Natural Sciences Foundation of China (NSFC); National Science Foundation (NSF) of Guangdong; R. Welch Foundation; US Army Research Office (ARO); US Department of the Navy, Office of Naval Research (ONR); USDOE; USDOE Office of Science (SC)
Grant/Contract Number:
SC0012547
OSTI ID:
1611843
Journal Information:
Advanced Functional Materials, Journal Name: Advanced Functional Materials Journal Issue: 11 Vol. 29; ISSN 1616-301X
Publisher:
WileyCopyright Statement
Country of Publication:
United States
Language:
English

References (33)

Properties of Semiconductor Alloys: Group‐IV, III–V and II–VI Semiconductors book January 2009
Sodium-Induced Reordering of Atomic Stacks in Black Phosphorus journal January 2017
Tunable Chemical Sensing Performance of Black Phosphorus by Controlled Functionalization with Noble Metals journal August 2017
Electron Doping of Ultrathin Black Phosphorus with Cu Adatoms journal March 2016
Epitaxial Growth of Single Layer Blue Phosphorus: A New Phase of Two-Dimensional Phosphorus journal July 2016
Strain-Modulated Bandgap and Piezo-Resistive Effect in Black Phosphorus Field-Effect Transistors journal September 2017
Two-Dimensional SnS: A Phosphorene Analogue with Strong In-Plane Electronic Anisotropy journal February 2017
Growth of Quasi-Free-Standing Single-Layer Blue Phosphorus on Tellurium Monolayer Functionalized Au(111) journal April 2017
Implanting Germanium into Graphene journal April 2018
Band Gap Modulated by Electronic Superlattice in Blue Phosphorene journal April 2018
Magic Carbon Clusters in the Chemical Vapor Deposition Growth of Graphene journal December 2011
Single-Layer Single-Crystalline SnSe Nanosheets journal January 2013
Synthesis and Crystallographic Analysis of Shape-Controlled SnS Nanocrystal Photocatalysts: Evidence for a Pseudotetragonal Structural Modification journal July 2013
GeSe Thin-Film Solar Cells Fabricated by Self-Regulated Rapid Thermal Sublimation journal January 2017
Strain-Engineering the Anisotropic Electrical Conductance of Few-Layer Black Phosphorus journal April 2014
Coulomb engineering of the bandgap and excitons in two-dimensional materials journal May 2017
Silicene field-effect transistors operating at room temperature journal February 2015
QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials journal September 2009
Quasiparticle excitations in GaAs 1 − x N x and AlAs 1 − x N x ordered alloys journal February 1995
Tunable Optical Gap at a Fixed Lattice Constant in Group-IV Semiconductor Alloys journal March 2009
Strain-Induced Gap Modification in Black Phosphorus journal May 2014
Semiconducting Layered Blue Phosphorus: A Computational Study journal May 2014
Alloy Engineering of Defect Properties in Semiconductors: Suppression of Deep Levels in Transition-Metal Dichalcogenides journal September 2015
Light-Induced Exciton Spin Hall Effect in van der Waals Heterostructures journal October 2015
Giant and Composition-Dependent Optical Bowing Coefficient in GaAsN Alloys journal January 1996
Generalized Gradient Approximation Made Simple journal October 1996
Giant Spin-Orbit Bowing in GaAs 1 − x Bi x journal August 2006
Strong Valence-Band Offset Bowing of ZnO 1 − x S x Enhances p -Type Nitrogen Doping of ZnO-like Alloys journal October 2006
One-dimensional phosphorus chain and two-dimensional blue phosphorene grown on Au(111) by molecular-beam epitaxy journal November 2017
Observation of tunable band gap and anisotropic Dirac semimetal state in black phosphorus journal August 2015
Semiconducting layered blue phosphorus: A computational study text January 2014
One-dimensional phosphorus chain and two-dimensional blue phosphorene grown on Au(111) by molecular-beam epitaxy text January 2017
Coulomb engineering of the bandgap and excitons in two-dimensional materials text January 2017

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