The role of transient surface morphology on composition control in AlGaN layers and wells

Houston Dycus, J.; Washiyama, Shun; Eldred, Tim B.; Guan, Yan; Kirste, Ronny; Mita, Seiji; Sitar, Zlatko; Collazo, Ramon; LeBeau, James M.

doi:10.1063/1.5063933

Title: The role of transient surface morphology on composition control in AlGaN layers and wells

Abstract

The mechanisms governing “compositional pulling” during the growth of Al_xGa_1-_xN wells are investigated. Gallium-rich Al_xGa_1-_xN wells grown on high dislocation density AlN/sapphire templates exhibit asymmetric and diffuse composition profiles, while those grown on low dislocation density native AlN substrates do not. Furthermore, strain in all Al_xGa_1-_xN wells is found to be pseudomorphic, ruling it out as the dominating driving force. Rather, the high threading dislocation density of the AlN template is considered to play the defining role. We propose that a transient surface morphology is introduced during dislocation mediated spiral growth, which, in conjunction with process supersaturation, determines the Ga incorporation. Finally, these findings provide insights into compositional pulling in high Ga content Al_xGa_1-_xN grown on AlN and provide a route to grow thicker wells with very abrupt interfaces on native AlN substrates.

Authors:

Houston Dycus, J. ^[1]; Washiyama, Shun ^[1]; Eldred, Tim B. ^[1]; Guan, Yan ^[1]; Kirste, Ronny ^[2]; Mita, Seiji ^[2];

^[3]; Collazo, Ramon ^[1]; LeBeau, James M. ^[1]

North Carolina State Univ., Raleigh, NC (United States)
Adroit Materials, Inc., Cary, NC (United States)
North Carolina State Univ., Raleigh, NC (United States); Adroit Materials, Inc., Cary, NC (United States)

Publication Date:: Wed Jan 23 00:00:00 EST 2019

Research Org.:: Adroit Materials, Cary, NC (United States)

Sponsoring Org.:: USDOE Office of Science (SC); National Science Foundation (NSF); US Army Research Office (ARO); US Air Force Office of Scientific Research (AFOSR); US Department of the Navy, Office of Naval Research (ONR)

OSTI Identifier:: 1611696

Grant/Contract Number:: SC0011883; ECCS-1508854; ECCS-1610992; DMR-1508191; ECCS-1653383; W911NF-15-2-0068; W911NF-16-C-0101; FA9550-17-1-0225; FA9550-14-1-0182; N62909-17-1-2004; DGE-1252376

Resource Type:: Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 114; Journal Issue: 3; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; physics

Citation Formats


                    Houston Dycus, J., Washiyama, Shun, Eldred, Tim B., Guan, Yan, Kirste, Ronny, Mita, Seiji, Sitar, Zlatko, Collazo, Ramon, and LeBeau, James M. The role of transient surface morphology on composition control in AlGaN layers and wells.  United States: N. p., 2019. 
Web.  doi:10.1063/1.5063933.

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                    Houston Dycus, J., Washiyama, Shun, Eldred, Tim B., Guan, Yan, Kirste, Ronny, Mita, Seiji, Sitar, Zlatko, Collazo, Ramon, & LeBeau, James M. The role of transient surface morphology on composition control in AlGaN layers and wells.  United States.  https://doi.org/10.1063/1.5063933

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                    Houston Dycus, J., Washiyama, Shun, Eldred, Tim B., Guan, Yan, Kirste, Ronny, Mita, Seiji, Sitar, Zlatko, Collazo, Ramon, and LeBeau, James M. Wed .  
"The role of transient surface morphology on composition control in AlGaN layers and wells".  United States.  https://doi.org/10.1063/1.5063933.  https://www.osti.gov/servlets/purl/1611696.

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@article{osti_1611696,

  title        = {The role of transient surface morphology on composition control in AlGaN layers and wells},

  author       = {Houston Dycus, J. and Washiyama, Shun and Eldred, Tim B. and Guan, Yan and Kirste, Ronny and Mita, Seiji and Sitar, Zlatko and Collazo, Ramon and LeBeau, James M.},

  abstractNote = {The mechanisms governing “compositional pulling” during the growth of AlxGa1-xN wells are investigated. Gallium-rich AlxGa1-xN wells grown on high dislocation density AlN/sapphire templates exhibit asymmetric and diffuse composition profiles, while those grown on low dislocation density native AlN substrates do not. Furthermore, strain in all AlxGa1-xN wells is found to be pseudomorphic, ruling it out as the dominating driving force. Rather, the high threading dislocation density of the AlN template is considered to play the defining role. We propose that a transient surface morphology is introduced during dislocation mediated spiral growth, which, in conjunction with process supersaturation, determines the Ga incorporation. Finally, these findings provide insights into compositional pulling in high Ga content AlxGa1-xN grown on AlN and provide a route to grow thicker wells with very abrupt interfaces on native AlN substrates.},

  doi          = {10.1063/1.5063933},

  journal      = {Applied Physics Letters},

  number       = 3,

  volume       = 114,

  place        = {United States},

  year         = {Wed Jan 23 00:00:00 EST 2019},

  month        = {Wed Jan 23 00:00:00 EST 2019}

}

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Works referencing / citing this record:

Challenges for reliable internal quantum efficiency determination in AlGaN-based multi-quantum-well structures posed by carrier transport effects and morphology issues
journal, August 2019

Frankerl, Christian; Hoffmann, Marc P.; Nippert, Felix
Journal of Applied Physics, Vol. 126, Issue 7
DOI: 10.1063/1.5100498

Design of AlGaN-based quantum structures for low threshold UVC lasers
journal, December 2019

Guo, Qiang; Kirste, Ronny; Mita, Seiji
Journal of Applied Physics, Vol. 126, Issue 22
DOI: 10.1063/1.5125256

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Title: The role of transient surface morphology on composition control in AlGaN layers and wells

Abstract

Citation Formats

A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition journal, September 2018

Accurate Nanoscale Crystallography in Real-Space Using Scanning Transmission Electron Microscopy journal, July 2015

Revolving scanning transmission electron microscopy: Correcting sample drift distortion without prior knowledge journal, March 2014

Direct evidence of compositional pulling effect in AlxGa1−xN epilayers journal, April 2006

Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition journal, August 2010

AlGaN/GaN quantum well ultraviolet light emitting diodes journal, September 1998

Seeded growth of AlN bulk crystals in m- and c-orientation journal, December 2009

Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes journal, September 2014

Investigation of the “composition-pulling or lattice-latching” effect in LPE journal, April 2005

Imaging individual atoms inside crystals with ADF-STEM journal, September 2003

Composition pulling effect and strain relief mechanism in AlGaN/AlN distributed Bragg reflectors journal, June 2011

Seeded growth of AlN single crystals by physical vapor transport journal, January 2006

Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system journal, April 2016

Influence of strain relaxation of the AlxGa1−xN barrier on transport properties of the two-dimensional electron gas in modulation-doped AlxGa1−xN/GaN heterostructures journal, May 2000

AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10% journal, July 2012

A reliable approach to prepare brittle semiconducting materials for cross-sectional transmission electron microscopy: A RELIABLE APPROACH TO PREPARE BRITTLE SEMICONDUCTING MATERIALS journal, July 2017

Extremely high internal quantum efficiencies from AlGaN/AlN quantum wells emitting in the deep ultraviolet spectral region journal, July 2011

III–V Nitrides—thermodynamics and crystal growth at high N2 pressure journal, March 1995

Fundamental chemistry and modeling of group-III nitride MOVPE journal, January 2007

The Growth of Crystals and the Equilibrium Structure of their Surfaces journal, June 1951

Reaction Pathways of GaN (0001) Growth from Trimethylgallium and Ammonia versus Triethylgallium and Hydrazine Using First Principle Calculations journal, February 2015

High-quality AlGaN layers over pulsed atomic-layer epitaxially grown AlN templates for deep ultraviolet light-emitting diodes journal, May 2003

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Strain management of AlGaN-based distributed Bragg reflectors with GaN interlayer grown by metalorganic chemical vapor deposition journal, August 2016

Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures journal, April 2013

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Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides journal, March 2016

Large area strain analysis using scanning transmission electron microscopy across multiple images journal, January 2015

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The role of surface kinetics on composition and quality of AlGaN journal, October 2016

Migration enhanced MOCVD (MEMOCVDTM) buffers for increased carrier lifetime in GaN and AlGaN epilayers on sapphire and SiC substrate journal, May 2005

Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications journal, May 2011

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Challenges for reliable internal quantum efficiency determination in AlGaN-based multi-quantum-well structures posed by carrier transport effects and morphology issues journal, August 2019

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A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition
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Accurate Nanoscale Crystallography in Real-Space Using Scanning Transmission Electron Microscopy
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Revolving scanning transmission electron microscopy: Correcting sample drift distortion without prior knowledge
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Direct evidence of compositional pulling effect in AlxGa1−xN epilayers
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Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition
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AlGaN/GaN quantum well ultraviolet light emitting diodes
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Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes
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Investigation of the “composition-pulling or lattice-latching” effect in LPE
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Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system
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III–V Nitrides—thermodynamics and crystal growth at high N2 pressure
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journal, June 1951

Reaction Pathways of GaN (0001) Growth from Trimethylgallium and Ammonia versus Triethylgallium and Hydrazine Using First Principle Calculations
journal, February 2015

High-quality AlGaN layers over pulsed atomic-layer epitaxially grown AlN templates for deep ultraviolet light-emitting diodes
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Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD
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Strain management of AlGaN-based distributed Bragg reflectors with GaN interlayer grown by metalorganic chemical vapor deposition
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Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures
journal, April 2013

Monte Carlo simulation of In surface segregation during the growth of ${In}_{x}$ ${Ga}_{1 - x}$ As on GaAs(001)
journal, January 1996

Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides
journal, March 2016

Large area strain analysis using scanning transmission electron microscopy across multiple images
journal, January 2015

Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells
journal, August 1992

The role of surface kinetics on composition and quality of AlGaN
journal, October 2016

Migration enhanced MOCVD (MEMOCVDTM) buffers for increased carrier lifetime in GaN and AlGaN epilayers on sapphire and SiC substrate
journal, May 2005

Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications
journal, May 2011

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journal, October 2016

Challenges for reliable internal quantum efficiency determination in AlGaN-based multi-quantum-well structures posed by carrier transport effects and morphology issues
journal, August 2019

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