Quantum Hall–based superconducting interference device
Abstract
We present a study of a graphene-based Josephson junction with dedicated side gates carved from the same sheet of graphene as the junction itself. These side gates are highly efficient and allow us to modulate carrier density along either edge of the junction in a wide range. In particular, in magnetic fields in the 1- to 2-T range, we are able to populate the next Landau level, resulting in Hall plateaus with conductance that differs from the bulk filling factor. When counter-propagating quantum Hall edge states are introduced along either edge, we observe a supercurrent localized along that edge of the junction. Here, we study these supercurrents as a function of magnetic field and carrier density.
- Authors:
-
[1];
[1];
[2];
[2];
[3];
[2];
[1]
- Duke Univ., Durham, NC (United States)
- Univ. of Appalachia, Boone, NC (United States)
- National Inst. for Materials Science (NIMS), Tsukuba (Japan)
- Publication Date:
- Research Org.:
- Duke Univ., Durham, NC (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1610734
- Grant/Contract Number:
- SC0002765
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Science Advances
- Additional Journal Information:
- Journal Volume: 5; Journal Issue: 9; Journal ID: ISSN 2375-2548
- Publisher:
- AAAS
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Science & Technology - Other Topics
Citation Formats
Seredinski, Andrew, Draelos, Anne W., Arnault, Ethan G., Wei, Ming-Tso, Li, Hengming, Fleming, Tate, Watanabe, Kenji, Taniguchi, Takashi, Amet, François, and Finkelstein, Gleb. Quantum Hall–based superconducting interference device. United States: N. p., 2019.
Web. doi:10.1126/sciadv.aaw8693.
Seredinski, Andrew, Draelos, Anne W., Arnault, Ethan G., Wei, Ming-Tso, Li, Hengming, Fleming, Tate, Watanabe, Kenji, Taniguchi, Takashi, Amet, François, & Finkelstein, Gleb. Quantum Hall–based superconducting interference device. United States. https://doi.org/10.1126/sciadv.aaw8693
Seredinski, Andrew, Draelos, Anne W., Arnault, Ethan G., Wei, Ming-Tso, Li, Hengming, Fleming, Tate, Watanabe, Kenji, Taniguchi, Takashi, Amet, François, and Finkelstein, Gleb. Fri .
"Quantum Hall–based superconducting interference device". United States. https://doi.org/10.1126/sciadv.aaw8693. https://www.osti.gov/servlets/purl/1610734.
@article{osti_1610734,
title = {Quantum Hall–based superconducting interference device},
author = {Seredinski, Andrew and Draelos, Anne W. and Arnault, Ethan G. and Wei, Ming-Tso and Li, Hengming and Fleming, Tate and Watanabe, Kenji and Taniguchi, Takashi and Amet, François and Finkelstein, Gleb},
abstractNote = {We present a study of a graphene-based Josephson junction with dedicated side gates carved from the same sheet of graphene as the junction itself. These side gates are highly efficient and allow us to modulate carrier density along either edge of the junction in a wide range. In particular, in magnetic fields in the 1- to 2-T range, we are able to populate the next Landau level, resulting in Hall plateaus with conductance that differs from the bulk filling factor. When counter-propagating quantum Hall edge states are introduced along either edge, we observe a supercurrent localized along that edge of the junction. Here, we study these supercurrents as a function of magnetic field and carrier density.},
doi = {10.1126/sciadv.aaw8693},
journal = {Science Advances},
number = 9,
volume = 5,
place = {United States},
year = {2019},
month = {9}
}
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