Quantum Hall stripes in high-density GaAs/AlGaAs quantum wells

Journal Article · 25 November 2018 · Physical Review B

DOI: https://doi.org/10.1103/physrevb.98.205418 · OSTI ID:1610712

Fu, X. ^[1]; Shi, Q. ^[2]; Zudov, M. A. ^[2]; Chung, Y. J. ^[3]; Baldwin, K. W. ^[3]; Pfeiffer, L. N. ^[3]; West, K. W. ^[3]

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1. Univ. of Minnesota, Minneapolis, MN (United States); DOE/OSTI
2. Univ. of Minnesota, Minneapolis, MN (United States)
3. Princeton Univ., NJ (United States)

We report on quantum Hall stripes (QHSs) formed in higher Landau levels of GaAs/AlGaAs quantum wells with high carrier density (n_e > 4 × 10¹¹ cm^–2) which is expected to favor QHS orientation along the unconventional < 1¯10 > crystal axis and along the in-plane magnetic field B_∥. Surprisingly, we find that at B_∥ = 0 QHSs in our samples are aligned along the < 110 > direction and can be reoriented only perpendicular to B_∥. Furthermore, these findings suggest that high density alone is not a decisive factor for either abnormal native QHS orientation or alignment with respect to B_∥, while quantum confinement of the 2DEG likely plays an important role.

• Research Organization: Univ. of Minnesota, Minneapolis, MN (United States)
• Sponsoring Organization: Gordon and Betty Moore Foundation; National Science Foundation MRSEC; USDOE; USDOE Office of Science (SC)
• Grant/Contract Number: SC0002567
• OSTI ID: 1610712
• Journal Information: Physical Review B, Journal Name: Physical Review B Journal Issue: 20 Vol. 98; ISSN 2469-9950
• Publisher: American Physical Society (APS)Copyright Statement
• Country of Publication: United States
• Language: English