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Title: Asymmetric hot-carrier thermalization and broadband photoresponse in graphene-2D semiconductor lateral heterojunctions

Abstract

The massless Dirac electron transport in graphene has led to a variety of unique light-matter interaction phenomena, which promise many novel optoelectronic applications. Most of the effects are only accessible by breaking the spatial symmetry, through introducing edges, p-n junctions, or heterogeneous interfaces. The recent development of direct synthesis of lateral heterostructures offers new opportunities to achieve the desired asymmetry. As a proof of concept, we study the photothermoelectric effect in an asymmetric lateral heterojunction between the Dirac semimetallic monolayer graphene and the parabolic semiconducting monolayer MoS2. Very different hot-carrier cooling mechanisms on the graphene and the MoS2sides allow us to resolve the asymmetric thermalization pathways of photoinduced hot carriers spatially with electrostatic gate tunability. We also demonstrate the potential of graphene-2D semiconductor lateral heterojunctions as broadband infrared photodetectors. The proposed structure shows an extreme in-plane asymmetry and provides a new platform to study light-matter interactions in low-dimensional systems.

Authors:
ORCiD logo [1];  [1]; ORCiD logo [1]; ORCiD logo [1];  [1];  [1];  [1]; ORCiD logo [2];  [1];  [1];  [1]; ORCiD logo [1]; ORCiD logo [3]; ORCiD logo [4];  [1]; ORCiD logo [1]; ORCiD logo [1];  [5]; ORCiD logo [1]; ORCiD logo [1]
  1. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
  2. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Beihang Univ., Beijing (China)
  3. Beihang Univ., Beijing (China)
  4. Pennsylvania State Univ., University Park, PA (United States)
  5. Boston Univ., MA (United States)
Publication Date:
Research Org.:
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Univ. of Washington, Seattle, WA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1610524
Grant/Contract Number:  
SC0001088; SC0012509
Resource Type:
Accepted Manuscript
Journal Name:
Science Advances
Additional Journal Information:
Journal Volume: 5; Journal Issue: 6; Journal ID: ISSN 2375-2548
Publisher:
AAAS
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Science & Technology - Other Topics

Citation Formats

Lin, Yuxuan, Ma, Qiong, Shen, Pin-Chun, Ilyas, Batyr, Bie, Yaqing, Liao, Albert, Ergeçen, Emre, Han, Bingnan, Mao, Nannan, Zhang, Xu, Ji, Xiang, Zhang, Yuhao, Yin, Jihao, Huang, Shengxi, Dresselhaus, Mildred, Gedik, Nuh, Jarillo-Herrero, Pablo, Ling, Xi, Kong, Jing, and Palacios, Tomás. Asymmetric hot-carrier thermalization and broadband photoresponse in graphene-2D semiconductor lateral heterojunctions. United States: N. p., 2019. Web. doi:10.1126/sciadv.aav1493.
Lin, Yuxuan, Ma, Qiong, Shen, Pin-Chun, Ilyas, Batyr, Bie, Yaqing, Liao, Albert, Ergeçen, Emre, Han, Bingnan, Mao, Nannan, Zhang, Xu, Ji, Xiang, Zhang, Yuhao, Yin, Jihao, Huang, Shengxi, Dresselhaus, Mildred, Gedik, Nuh, Jarillo-Herrero, Pablo, Ling, Xi, Kong, Jing, & Palacios, Tomás. Asymmetric hot-carrier thermalization and broadband photoresponse in graphene-2D semiconductor lateral heterojunctions. United States. doi:10.1126/sciadv.aav1493.
Lin, Yuxuan, Ma, Qiong, Shen, Pin-Chun, Ilyas, Batyr, Bie, Yaqing, Liao, Albert, Ergeçen, Emre, Han, Bingnan, Mao, Nannan, Zhang, Xu, Ji, Xiang, Zhang, Yuhao, Yin, Jihao, Huang, Shengxi, Dresselhaus, Mildred, Gedik, Nuh, Jarillo-Herrero, Pablo, Ling, Xi, Kong, Jing, and Palacios, Tomás. Fri . "Asymmetric hot-carrier thermalization and broadband photoresponse in graphene-2D semiconductor lateral heterojunctions". United States. doi:10.1126/sciadv.aav1493. https://www.osti.gov/servlets/purl/1610524.
@article{osti_1610524,
title = {Asymmetric hot-carrier thermalization and broadband photoresponse in graphene-2D semiconductor lateral heterojunctions},
author = {Lin, Yuxuan and Ma, Qiong and Shen, Pin-Chun and Ilyas, Batyr and Bie, Yaqing and Liao, Albert and Ergeçen, Emre and Han, Bingnan and Mao, Nannan and Zhang, Xu and Ji, Xiang and Zhang, Yuhao and Yin, Jihao and Huang, Shengxi and Dresselhaus, Mildred and Gedik, Nuh and Jarillo-Herrero, Pablo and Ling, Xi and Kong, Jing and Palacios, Tomás},
abstractNote = {The massless Dirac electron transport in graphene has led to a variety of unique light-matter interaction phenomena, which promise many novel optoelectronic applications. Most of the effects are only accessible by breaking the spatial symmetry, through introducing edges, p-n junctions, or heterogeneous interfaces. The recent development of direct synthesis of lateral heterostructures offers new opportunities to achieve the desired asymmetry. As a proof of concept, we study the photothermoelectric effect in an asymmetric lateral heterojunction between the Dirac semimetallic monolayer graphene and the parabolic semiconducting monolayer MoS2. Very different hot-carrier cooling mechanisms on the graphene and the MoS2sides allow us to resolve the asymmetric thermalization pathways of photoinduced hot carriers spatially with electrostatic gate tunability. We also demonstrate the potential of graphene-2D semiconductor lateral heterojunctions as broadband infrared photodetectors. The proposed structure shows an extreme in-plane asymmetry and provides a new platform to study light-matter interactions in low-dimensional systems.},
doi = {10.1126/sciadv.aav1493},
journal = {Science Advances},
number = 6,
volume = 5,
place = {United States},
year = {2019},
month = {6}
}

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