Nanoscale groove textured β-Ga2 O 3 by room temperature inverse metal-assisted chemical etching and photodiodes with enhanced responsivity

Kim, Munho; Huang, Hsien-Chih; Kim, Jeong Dong; Chabak, Kelson D.; Kalapala, Akhil Raj Kumar; Zhou, Weidong; Li, Xiuling

doi:10.1063/1.5053219

Title: Nanoscale groove textured β-Ga₂ O ₃ by room temperature inverse metal-assisted chemical etching and photodiodes with enhanced responsivity

Journal Article · 29 November 2018 · Applied Physics Letters

DOI: https://doi.org/10.1063/1.5053219 · OSTI ID:1609924

^[1]; Huang, Hsien-Chih ^[2]; Kim, Jeong Dong ^[2]; Chabak, Kelson D. ^[3]; Kalapala, Akhil Raj Kumar ^[4]; Zhou, Weidong ^[4]; Li, Xiuling ^[2]

Univ. of Illinois at Urbana-Champaign, IL (United States); DOE/OSTI
Univ. of Illinois at Urbana-Champaign, IL (United States)
Air Force Research Lab. (AFRL), Wright-Patterson AFB, OH (United States)
Univ. of Texas, Arlington, TX (United States)

β-Ga₂O₃ is an emerging wide band-gap semiconductor that holds great promise for next generation power electronics and optoelectronics. β-Ga₂O₃ based ultraviolet photodetectors have been the subject of active research for the last few years. However, no micro and nanostructure surface texturing has been demonstrated for efficient light management in β-Ga₂O₃ optoelectronic applications yet. We hereby present nanoscale groove textured β-Ga₂O₃ metal-semiconductor-metal photodiodes, enabled by the unique metal-assisted chemical etching (MacEtch) method at room temperature in liquid. Although the textured surface stoichiometry shows ~10% oxygen deficiency which results in a reduced Schottky barrier height and increased dark current, clear enhancement of the responsivity is demonstrated, compared to the planar untreated surface. Overall, the realization of MacEtch's applicability to β-Ga₂O₃ opens the door for producing more sophisticated device structures for this material, without resorting to conventional dry etch and potential damage.

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Research Organization:: Univ. of Illinois at Urbana-Champaign, IL (United States)

Sponsoring Organization:: National Science Foundation (NSF); US Air Force Office of Scientific Research (AFOSR); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

Grant/Contract Number:: FG02-07ER46471

OSTI ID:: 1609924

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 113; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Nanoscale groove textured β-Ga2 O 3 by room temperature inverse metal-assisted chemical etching and photodiodes with enhanced responsivity

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