Title: Metamorphic narrow-gap InSb/InAsSb superlattices with ultra-thin layers

Journal Article · · Applied Physics Letters
DOI: https://doi.org/10.1063/1.5051767 · OSTI ID:1609904
ORCiD logo [1]; ORCiD logo [2];  [2];  [2];  [3];  [4]; ORCiD logo [4];  [4];  [5];  [5]
  1. State Univ. of New York (SUNY), Stony Brook, NY (United States); DOE/OSTI
  2. State Univ. of New York (SUNY), Stony Brook, NY (United States)
  3. Hebrew Univ. of Jerusalem (Israel). Racah Inst. of Physics
  4. Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)
  5. Army Research Lab., Adelphi, MD (United States)

Metamorphic strain compensated InSb/InAsSb0.52 superlattices (SLs) with ultrathin layers and different periods grown on GaSb substrate were designed, fabricated, and characterized. It was shown that a period increase from 3 to 6.2 nm reduced the effective bandgap energy from 70 to 0 meV. A further increase in the period leads to inversion of the valence and conduction bands. Magneto-optical experiments demonstrated that Dirac-like carrier dispersion is characteristic of almost gapless InSb/InAsSb0.52 SLs. Indication of hole transport enhancement over that found in InAsSb/InAsSb SL structures is presented.

Research Organization:
Florida State Univ., Tallahassee, FL (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
Grant/Contract Number:
FG02-07ER46451
OSTI ID:
1609904
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 21 Vol. 113; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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Cited By (2)

Dirac energy spectrum and inverted bandgap in metamorphic InAsSb/InSb superlattices journal January 2020
Dirac energy spectrum and inverted band gap in metamorphic InAsSb/InSb superlattices text January 2019