Metamorphic narrow-gap InSb/InAsSb superlattices with ultra-thin layers
Journal Article
·
· Applied Physics Letters
- State Univ. of New York (SUNY), Stony Brook, NY (United States); DOE/OSTI
- State Univ. of New York (SUNY), Stony Brook, NY (United States)
- Hebrew Univ. of Jerusalem (Israel). Racah Inst. of Physics
- Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)
- Army Research Lab., Adelphi, MD (United States)
Metamorphic strain compensated InSb/InAsSb0.52 superlattices (SLs) with ultrathin layers and different periods grown on GaSb substrate were designed, fabricated, and characterized. It was shown that a period increase from 3 to 6.2 nm reduced the effective bandgap energy from 70 to 0 meV. A further increase in the period leads to inversion of the valence and conduction bands. Magneto-optical experiments demonstrated that Dirac-like carrier dispersion is characteristic of almost gapless InSb/InAsSb0.52 SLs. Indication of hole transport enhancement over that found in InAsSb/InAsSb SL structures is presented.
- Research Organization:
- Florida State Univ., Tallahassee, FL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- Grant/Contract Number:
- FG02-07ER46451
- OSTI ID:
- 1609904
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 21 Vol. 113; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Dirac energy spectrum and inverted bandgap in metamorphic InAsSb/InSb superlattices
|
journal | January 2020 |
| Dirac energy spectrum and inverted band gap in metamorphic InAsSb/InSb superlattices | text | January 2019 |
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