High-mobility indirect excitons in wide single quantum well

Dorow, C. J.; Hasling, M. W.; Choksy, D. J.; Leonard, J. R.; Butov, L. V.; West, K. W.; Pfeiffer, L. N.

doi:10.1063/1.5063844

Title: High-mobility indirect excitons in wide single quantum well

Journal Article · 18 November 2018 · Applied Physics Letters

DOI: https://doi.org/10.1063/1.5063844 · OSTI ID:1609901

Dorow, C. J. ^[1]; Hasling, M. W. ^[1]; Choksy, D. J. ^[1]; Leonard, J. R. ^[1]; Butov, L. V. ^[1]; West, K. W. ^[2]; Pfeiffer, L. N. ^[2]

Univ. of California, San Diego, CA (United States)
Princeton Univ., NJ (United States)

Indirect excitons (IXs) are bound pairs of electrons and holes confined in spatially separated layers. We present wide single quantum well (WSQW) heterostructures with high IX mobility, spectrally narrow IX emission, voltage-controllable IX energy, and long and voltage-controllable IX lifetime. This set of properties shows that WSQW heterostructures provide an advanced platform both for studying basic properties of IXs in low-disorder environments and for the development of high-mobility excitonic devices.

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Research Organization:: Univ. of California, San Diego, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: FG02-07ER46449

OSTI ID:: 1609901

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 21 Vol. 113; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
Emission spectroscopy
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Quantum wells
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Title: High-mobility indirect excitons in wide single quantum well

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