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Title: Noise processes in InAs/Ga(In)Sb Corbino structures

 [1];  [2]; ORCiD logo [3]; ORCiD logo [1]
  1. Rice Univ., Houston, TX (United States)
  2. Cornell Univ., Ithaca, NY (United States)
  3. Rice Univ., Houston, TX (United States); Peking Univ., Beijing (China)
Publication Date:
Research Org.:
Rice Univ., Houston, TX (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
Alternate Identifier(s):
OSTI ID: 1546102
Grant/Contract Number:  
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 115; Journal Issue: 5; Journal ID: ISSN 0003-6951
American Institute of Physics (AIP)
Country of Publication:
United States
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Physics; Electronic noise; Semiconductor devices; Quantum wells; Contact impedance; Topological insulator

Citation Formats

Stevens, Loah A., Li, Tingxin, Du, Rui-Rui, and Natelson, Douglas. Noise processes in InAs/Ga(In)Sb Corbino structures. United States: N. p., 2019. Web.
Stevens, Loah A., Li, Tingxin, Du, Rui-Rui, & Natelson, Douglas. Noise processes in InAs/Ga(In)Sb Corbino structures. United States.
Stevens, Loah A., Li, Tingxin, Du, Rui-Rui, and Natelson, Douglas. Mon . "Noise processes in InAs/Ga(In)Sb Corbino structures". United States.
title = {Noise processes in InAs/Ga(In)Sb Corbino structures},
author = {Stevens, Loah A. and Li, Tingxin and Du, Rui-Rui and Natelson, Douglas},
abstractNote = {},
doi = {10.1063/1.5111626},
journal = {Applied Physics Letters},
number = 5,
volume = 115,
place = {United States},
year = {2019},
month = {7}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Figures / Tables:

FIG. 1 FIG. 1: (a) Colorized SEM image; yellow indicates inner and outer gold electrodes, and blue denotes the top gate; (b) diagram of the device structure; and (c) band structure of the QWs.

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    Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.