skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Noise processes in InAs/Ga(In)Sb Corbino structures

Authors:
 [1];  [2]; ORCiD logo [3]; ORCiD logo [1]
  1. Rice Univ., Houston, TX (United States)
  2. Cornell Univ., Ithaca, NY (United States)
  3. Rice Univ., Houston, TX (United States); Peking Univ., Beijing (China)
Publication Date:
Research Org.:
Rice Univ., Houston, TX (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1609761
Alternate Identifier(s):
OSTI ID: 1546102
Grant/Contract Number:  
FG02-06ER46337
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 115; Journal Issue: 5; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Physics; Electronic noise; Semiconductor devices; Quantum wells; Contact impedance; Topological insulator

Citation Formats

Stevens, Loah A., Li, Tingxin, Du, Rui-Rui, and Natelson, Douglas. Noise processes in InAs/Ga(In)Sb Corbino structures. United States: N. p., 2019. Web. https://doi.org/10.1063/1.5111626.
Stevens, Loah A., Li, Tingxin, Du, Rui-Rui, & Natelson, Douglas. Noise processes in InAs/Ga(In)Sb Corbino structures. United States. https://doi.org/10.1063/1.5111626
Stevens, Loah A., Li, Tingxin, Du, Rui-Rui, and Natelson, Douglas. Mon . "Noise processes in InAs/Ga(In)Sb Corbino structures". United States. https://doi.org/10.1063/1.5111626. https://www.osti.gov/servlets/purl/1609761.
@article{osti_1609761,
title = {Noise processes in InAs/Ga(In)Sb Corbino structures},
author = {Stevens, Loah A. and Li, Tingxin and Du, Rui-Rui and Natelson, Douglas},
abstractNote = {},
doi = {10.1063/1.5111626},
journal = {Applied Physics Letters},
number = 5,
volume = 115,
place = {United States},
year = {2019},
month = {7}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Figures / Tables:

FIG. 1 FIG. 1: (a) Colorized SEM image; yellow indicates inner and outer gold electrodes, and blue denotes the top gate; (b) diagram of the device structure; and (c) band structure of the QWs.

Save / Share:

Works referenced in this record:

Backscattering between helical edge states via dynamic nuclear polarization
journal, April 2013


Magnetotransport of coupled electron-holes
journal, August 2001


Topological insulators and superconductors
journal, October 2011


Z 2 Peak of Noise Correlations in a Quantum Spin Hall Insulator
journal, June 2013


Enhanced shot noise from tunneling and space-charge positive feedback
journal, December 2000


Single-edge transport in an InAs/GaSb quantum spin Hall insulator
journal, July 2016


Effects of dephasing and dissipation on quantum noise in conductors
journal, August 1992


Z2 Topological Order and the Quantum Spin Hall Effect
journal, September 2005


Quantum Spin Hall Insulator State in HgTe Quantum Wells
journal, November 2007


Nonlocal transport via edge states in InAs/GaSb coupled quantum wells
journal, August 2015


Decoupling Edge Versus Bulk Conductance in the Trivial Regime of an InAs / GaSb Double Quantum Well Using Corbino Ring Geometry
journal, August 2016


Fermi-level pinning position at the Au–InAs interface determined using ballistic electron emission microscopy
journal, February 1997

  • Bhargava, S.; Blank, H. -R.; Narayanamurti, V.
  • Applied Physics Letters, Vol. 70, Issue 6
  • DOI: 10.1063/1.118271

Highly sensitive and broadband carbon nanotube radio-frequency single-electron transistor
journal, August 2008

  • Andresen, S. E. S.; Wu, F.; Danneau, R.
  • Journal of Applied Physics, Vol. 104, Issue 3
  • DOI: 10.1063/1.2968123

Colloquium: Topological insulators
journal, November 2010


Cross-correlation measurement of quantum shot noise using homemade transimpedance amplifiers
journal, May 2014

  • Hashisaka, Masayuki; Ota, Tomoaki; Yamagishi, Masakazu
  • Review of Scientific Instruments, Vol. 85, Issue 5
  • DOI: 10.1063/1.4875588

Transport phenomena in helical edge state interferometers: A Green's function approach
journal, October 2013


Current Noise from a Magnetic Moment in a Helical Edge
journal, March 2017


Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
journal, December 2006

  • Bernevig, B. A.; Hughes, T. L.; Zhang, S.-C.
  • Science, Vol. 314, Issue 5806, p. 1757-1761
  • DOI: 10.1126/science.1133734

Quantum Spin Hall Effect in Inverted Type-II Semiconductors
journal, June 2008


Evidence of a Hybridization Gap in ``Semimetallic'' InAs/GaSb Systems
journal, June 1997


Shot noise in the edge states of two-dimensional topological insulators
journal, July 2016


Suppression of shot noise in metallic diffusive conductors
journal, July 1992


Tuning Edge States in Strained-Layer InAs / GaInSb Quantum Spin Hall Insulators
journal, August 2017


Shot noise in silicon Schottky barrier diodes
journal, October 1968

  • Cowley, A. M.; Zettler, R. A.
  • IEEE Transactions on Electron Devices, Vol. 15, Issue 10
  • DOI: 10.1109/T-ED.1968.16512

Helical Edge Resistance Introduced by Charge Puddles
journal, May 2013


Robust Helical Edge Transport in Gated InAs / GaSb Bilayers
journal, March 2015


Gate-controlled semimetal-topological insulator transition in an InAs/GaSb heterostructure
journal, June 2015


Noise in the Helical Edge Channel Anisotropically Coupled to a Local Spin
journal, November 2018


Temporal Correlation of Electrons: Suppression of Shot Noise in a Ballistic Quantum Point Contact
journal, October 1995


Mesoscopic noise: Common sense view
journal, September 1996


Current noise enhancement: channel mixing and possible nonequilibrium phonon backaction in atomic-scale Au junctions
journal, October 2016


Current Correlations in Quantum Spin Hall Insulators
journal, August 2011


Chaotic quantum transport near the charge neutrality point in inverted type-II InAs/GaSb field-effect transistors
journal, January 2013

  • Pan, W.; Klem, J. F.; Kim, J. K.
  • Applied Physics Letters, Vol. 102, Issue 3
  • DOI: 10.1063/1.4789555

Fast and accurate shot noise measurements on atomic-size junctions in the MHz regime
journal, September 2017

  • Tewari, Sumit; Sabater, Carlos; Kumar, Manohar
  • Review of Scientific Instruments, Vol. 88, Issue 9
  • DOI: 10.1063/1.5003391

Evidence for Helical Edge Modes in Inverted InAs / GaSb Quantum Wells
journal, September 2011


Shot Noise Suppression at Room Temperature in Atomic-Scale Au Junctions
journal, April 2010

  • Wheeler, P. J.; Russom, J. N.; Evans, K.
  • Nano Letters, Vol. 10, Issue 4
  • DOI: 10.1021/nl904052r

Edge transport in the trivial phase of InAs/GaSb
journal, July 2016


Electric and Magnetic Tuning Between the Trivial and Topological Phases in InAs/GaSb Double Quantum Wells
journal, July 2015


Noise and current correlations in tunnel junctions of quantum spin Hall edge states
journal, October 2015


Shot noise in mesoscopic conductors
journal, September 2000


Observation of Hot-Electron Shot Noise in a Metallic Resistor
journal, May 1996

  • Steinbach, Andrew H.; Martinis, John M.; Devoret, Michel H.
  • Physical Review Letters, Vol. 76, Issue 20
  • DOI: 10.1103/PhysRevLett.76.3806

Finite conductivity in mesoscopic Hall bars of inverted InAs/GaSb quantum wells
journal, May 2010


    Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.