Title: Hidden spin current in doped Mott antiferromagnets

Journal Article · · Physical Review B
 [1];  [2];  [3];  [4]
  1. Tsinghua Univ., Beijing (China); DOE/OSTI
  2. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
  3. California State Univ., Northridge, CA (United States)
  4. Tsinghua Univ., Beijing (China)

We investigate the nature of doped Mott insulators using exact diagonalization and density matrix renormalization group methods. Persistent spin currents are revealed in the ground state, which are concomitant with a nonzero total momentum or angular momentum associated with the doped hole. The latter determines a nontrivial ground state degeneracy. By further making superpositions of the degenerate ground states with zero or unidirectional spin currents, we show that different patterns of spatial charge and spin modulations will emerge. Here, such anomaly persists for the odd numbers of holes, but the spin current, ground state degeneracy, and charge/spin modulations completely disappear for even numbers of holes, with the two-hole ground state exhibiting a d-wave symmetry. An understanding of the spin current due to a many-body Berry-like phase and its influence on the momentum distribution of the doped holes will be discussed.

Research Organization:
California State University, Northridge (CSUN), CA (United States)
Sponsoring Organization:
Ministry of Science and Technology of the People’s Republic of China (MOST); National Natural Science Foundation of China (NSFC); Natural Science Foundation of China; USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Grant/Contract Number:
FG02-06ER46305
OSTI ID:
1609732
Journal Information:
Physical Review B, Journal Name: Physical Review B Journal Issue: 16 Vol. 98; ISSN 2469-9950; ISSN PRBMDO
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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