Significantly enhanced magnetoresistance in monolayer WTe2 via heterojunction engineering: a first-principles study

Hu, Lin; Kang, Lei; Yang, Jinlong; Huang, Bing; Liu, Feng

doi:10.1039/c8nr04391d

Title: Significantly enhanced magnetoresistance in monolayer WTe₂ via heterojunction engineering: a first-principles study

Journal Article · 01 November 2018 · Nanoscale

DOI: https://doi.org/10.1039/c8nr04391d · OSTI ID:1609548

^[1];

^[2];

^[3]; Huang, Bing ^[4]; Liu, Feng ^[5]

Beijing Computational Science Research Center, Beijing (China); Univ. of Utah, Salt Lake City, UT (United States); DOE/OSTI
Beijing Computational Science Research Center, Beijing (China)
Univ. of Science and Technology of China, Hefei (China)
Beijing Computational Science Research Center, Beijing (China); Univ. of Utah, Salt Lake City, UT (United States)
Univ. of Utah, Salt Lake City, UT (United States); Collaborative Innovation Center of Quantum Matter, Beijing (China)

The large non-saturating magnetoresistance (MR) of bulk WTe₂ is known to be greatly reduced in thin films with decreasing thickness. In this study, based on first-principles calculations, we demonstrate that 2D WTe₂ bonded to graphene, through a WTe₂/graphene van der Waals (vdW) heterojunction, can exhibit a significantly enhanced MR, which can be even larger than that of bulk WTe₂. Moreover, the MR shows a strong stacking-orientation-dependent behavior, which facilitates a tunable MR effect. We report our findings illustrate a new route to enhancing the MR of WTe₂ and other 2D semimetals via heterojunction engineering, which is useful for a range of applications in information technology.

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Research Organization:: Univ. of Utah, Salt Lake City, UT (United States)

Sponsoring Organization:: China Postdoctoral Science Foundation; National Key Research and Development Program of China; National Natural Science Foundation of China (NSFC); Science Challenge Project; USDOE; USDOE Office of Science (SC)

Grant/Contract Number:: FG02-04ER46148

OSTI ID:: 1609548

Journal Information:: Nanoscale, Journal Name: Nanoscale Journal Issue: 47 Vol. 10; ISSN NANOHL; ISSN 2040-3364

Publisher:: Royal Society of ChemistryCopyright Statement

Country of Publication:: United States

Language:: English

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