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Title: Pressure effect on the electronic, structural, and vibrational properties of layered 2 H - MoTe 2

Journal Article · · Physical Review B
 [1];  [2];  [2];  [3];  [2];  [4];  [5];  [6]
  1. Center for High Pressure Science and Technology Advanced Research, Shanghai (China); Henan Univ. of Technology, Zhengzhou (China); Carnegie Inst. of Washington, Washington, DC (United States); DOE/OSTI
  2. Carnegie Inst. of Washington, Washington, DC (United States)
  3. Henan Univ. of Technology, Zhengzhou (China)
  4. Carnegie Inst. of Washington, Washington, DC (United States); Center for High Pressure Science and Technology Advanced Research, Shanghai (China)
  5. Russian Academy of Sciences, Moscow (Russia). Inst. for Nuclear Research and FSRC Crystallography and Photonics; Immanuel Kant Baltic Federal Univ., Kaliningrad (Russia)
  6. Center for High Pressure Science and Technology Advanced Research, Shanghai (China); Chinese Academy of Sciences (CAS), Hefei (China); Carnegie Inst. of Washington, Washington, DC (United States)
+ Show Author Affiliations

Layered molybdenum dichalchogenides differ from the classic example of bilayer graphene with their unique electronic properties: the application of pressure can continuously tune electronic structure since the band gap is controlled by delicate interlayer interaction. In this work, we have performed measurements of Raman scattering, synchrotron x-ray diffraction, electrical conductivity, and Hall coefficient combined with density functional theory calculations to synthetically study the pressure effect on $2H$-MoTe2. Both the experiments and calculations consistently demonstrate that MoTe2 undergoes a semiconductor-to-metallic (S-M) transition above 10 GPa. Unlike MoS2, the S-M transition is driven by the gradual tunability of electric structure and band gap without structural transition. The applied pressure also effectively enhances conductivity and carrier concentration while reducing the mobility, which makes MoTe2 more suitable for applications than most other transition-metal dichalchogenides and allows it to be applied in strain-modulated optoelectronic devices.

Research Organization:
Carnegie Inst. of Washington, Washington, DC (United States)
Sponsoring Organization:
USDOE Office of Science (SC); Henan University of Technology; National Natural Science Foundation of China (NSFC); RScF
Grant/Contract Number:
FG02-02ER45955
OSTI ID:
1609392
Journal Information:
Physical Review B, Journal Name: Physical Review B Journal Issue: 2 Vol. 99; ISSN 2469-9950; ISSN PRBMDO
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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Cited By (3)

A new criterion for the prediction of solid-state phase transition in TMDs journal January 2019
Near-field infrared spectroscopy of monolayer MnPS 3 journal August 2019
Effect of strain on the magnetism of Fe-doped MoTe 2 monolayer journal September 2019

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