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Title: High-field spatial imaging of charge transport in silicon at low temperature

Journal Article · · AIP Advances
DOI: https://doi.org/10.1063/1.5131171 · OSTI ID:1608949
ORCiD logo [1];  [1]; ORCiD logo [2];  [3]; ORCiD logo [4];  [3];  [1];  [3]; ORCiD logo [1];  [5]; ORCiD logo [1];  [6]
  1. Stanford Univ., CA (United States)
  2. Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States); Univ. of Chicago, IL (United States)
  3. SLAC National Accelerator Lab., Menlo Park, CA (United States)
  4. Stanford Univ., CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
  5. San Diego State Univ., San Diego, CA (United States)
  6. Santa Clara Univ., CA (United States)
+ Show Author Affiliations

We present direct imaging measurements of charge transport across a 1 cm × 1 cm × 4 mm-thick crystal of high purity silicon (~15 kΩ-cm) at temperatures of 5 K and 500 mK. We use these data to measure lateral diffusion of electrons and holes as a function of the electric field applied along the [111] crystal axis and to verify our low-temperature Monte Carlo software. The range of field strengths in this paper exceed those used in our previous study [R. A. Moffatt et al., Appl. Phys. Lett. 114, 032104 (2019)] by a factor of 10 and now encompass the region in which some recent silicon dark matter detectors operate [R. Agnese et al., Phys. Rev. Lett. 121, 051301 (2018)]. Finally, we also report on a phenomenon of surface charge trapping, which can reduce expected charge collection.

Research Organization:
SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States); Fermi National Accelerator Laboratory (FNAL), Batavia, IL (United States)
Sponsoring Organization:
National Science Foundation (NSF); USDOE Office of Science (SC), High Energy Physics (HEP)
Grant/Contract Number:
1161130-110-SDDTA; AC02-76SF00515; AC02-07CH11359
OSTI ID:
1608949
Alternate ID(s):
OSTI ID: 1598914; OSTI ID: 1615366
Report Number(s):
arXiv:1910.02169; FERMILAB-PUB-19-695-AE; TRN: US2105133
Journal Information:
AIP Advances, Vol. 10, Issue 2; ISSN 2158-3226
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 4 works
Citation information provided by
Web of Science

References (8)

Energy-Band Structure of Germanium and Silicon: The k·p Method journal February 1966
Acoustic mobility and nonparabolicity in semiconductors journal August 1975
Energy band structure in p-type germanium and silicon journal September 1956
First Dark Matter Constraints from a SuperCDMS Single-Charge Sensitive Detector journal August 2018
Thermal detection of single e-h pairs in a biased silicon crystal detector journal January 2018
Single-Electron and Single-Photon Sensitivity with a Silicon Skipper CCD journal September 2017
SENSEI: Direct-Detection Constraints on Sub-GeV Dark Matter from a Shallow Underground Run Using a Prototype Skipper CCD journal April 2019
Spatial imaging of charge transport in silicon at low temperature journal January 2019

Cited By (1)

Diamond Detectors for Direct Detection of Sub-GeV Dark Matter text January 2019

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