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Title: First‐Principles Simulation of Carrier Recombination Mechanisms in Halide Perovskites

 [1]; ORCiD logo [2];  [1]
  1. Materials Department University of California Santa Barbara CA 93106‐5050 USA
  2. Department of Physics University of California Santa Barbara CA 93106‐9530 USA
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Advanced Energy Materials
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Journal Name: Advanced Energy Materials Journal Volume: 10 Journal Issue: 13; Journal ID: ISSN 1614-6832
Wiley Blackwell (John Wiley & Sons)
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Zhang, Xie, Shen, Jimmy‐Xuan, and Van de Walle, Chris G. First‐Principles Simulation of Carrier Recombination Mechanisms in Halide Perovskites. Germany: N. p., 2019. Web. doi:10.1002/aenm.201902830.
Zhang, Xie, Shen, Jimmy‐Xuan, & Van de Walle, Chris G. First‐Principles Simulation of Carrier Recombination Mechanisms in Halide Perovskites. Germany. doi:
Zhang, Xie, Shen, Jimmy‐Xuan, and Van de Walle, Chris G. Tue . "First‐Principles Simulation of Carrier Recombination Mechanisms in Halide Perovskites". Germany. doi:
title = {First‐Principles Simulation of Carrier Recombination Mechanisms in Halide Perovskites},
author = {Zhang, Xie and Shen, Jimmy‐Xuan and Van de Walle, Chris G.},
abstractNote = {},
doi = {10.1002/aenm.201902830},
journal = {Advanced Energy Materials},
number = 13,
volume = 10,
place = {Germany},
year = {2019},
month = {11}

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