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Title: Experimental observations of large changes in electron density distributions in β - Ge

Journal Article · · Physical Review B
 [1];  [2];  [3]; ORCiD logo [3];  [3]; ORCiD logo [3]
  1. Chinese Academy of Sciences (CAS), Beijing (China); Carnegie Inst. for Science, Washington, DC (United States)
  2. Chinese Academy of Sciences (CAS), Beijing (China)
  3. Argonne National Lab. (ANL), Argonne, IL (United States). HPCAT

We report the electron density distributions in β-Ge have been experimentally determined at in situ high-pressure conditions using synchrotron diffraction techniques in a diamond anvil cell. Upon decompression, the electron density along the $$c$$ axis in tetragonal β-Ge displays a sudden drop at 10–11 GPa close to that of the structural α-β transition, while the β-Ge samples remain as single crystals until transforming to metastable Ge phases around 6.7–8.5 GPa. In contrast to the covalently bonded α-Ge that displays only a weak participation of $$d$$ electrons in the valence band under compression above 7.7 GPa, our experimental results suggest that a large change in $$d$$-orbital participation can occur in the β-Ge lattice which has mixed covalent and metallic bonding. The β-Ge below 10 GPa may display large fluctuations in electronic properties, which sheds light for exploring novel materials with intriguing electronic and optical properties.

Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Sponsoring Organization:
China Scholarship Council (CSC); Chinese Academy of Sciences (CAS); National Natural Science Foundation of China (NSFC); USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Grant/Contract Number:
AC02-06CH11357; FG02-99ER45775
OSTI ID:
1607449
Journal Information:
Physical Review B, Journal Name: Physical Review B Journal Issue: 22 Vol. 100; ISSN 2469-9950; ISSN PRBMDO
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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