Tackling Challenges in Seebeck Coefficient Measurement of Ultra-High Resistance Samples with an AC Technique

Pan, Zhenyu; Zhu, Zheng; Wilcox, Jonathon; Urban, Jeffrey J.; Yang, Fan; Wang, Heng

doi:10.1002/aelm.201901340

Title: Tackling Challenges in Seebeck Coefficient Measurement of Ultra-High Resistance Samples with an AC Technique

Journal Article · 14 January 2020 · Advanced Electronic Materials

DOI: https://doi.org/10.1002/aelm.201901340 · OSTI ID:1607412

Pan, Zhenyu ^[1]; Zhu, Zheng ^[1]; Wilcox, Jonathon ^[1]; Urban, Jeffrey J. ^[2]; Yang, Fan ^[3];

^[1]

Illinois Inst. of Technology, Chicago, IL (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Stevens Inst. of Technology, Hoboken, NJ (United States)

Seebeck coefficient is a widely studied semiconductor property. Conventional Seebeck coefficient measurements are based on DC voltage measurement. Normally this is performed on samples with moderate resistances (e.g., below a few MΩ level). Certain semiconductors are intrinsic and highly resistive. Many examples can be found in optical and photovoltaic materials. The hybrid halide perovskites that have gained extensive attention recently are a good example. Despite great attention from the materials and physics communities, few successful studies exist of the Seebeck coefficient of these compounds, for example CH₃NH₃PbI₃. An AC-technique-based Seebeck coefficient measurement is reported, which makes high-quality Seebeck voltage measurements on samples with resistances up to the 100 GΩ level. This is achieved through a specifically designed setup to enhance sample isolation and increase capacitive impedance. As a demonstration, Seebeck coefficient measurement of a CH₃NH₃PbI₃ thin film is performed at dark, with sample resistance 150 GΩ, and found S = +550 µV K^-1. Finally, the strategy reported could be applied to the studies of fundamental transport parameters of all intrinsic semiconductors that have not been feasible.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1607412

Journal Information:: Advanced Electronic Materials, Journal Name: Advanced Electronic Materials Journal Issue: 3 Vol. 6; ISSN 2199-160X

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Title: Tackling Challenges in Seebeck Coefficient Measurement of Ultra-High Resistance Samples with an AC Technique

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