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Title: Thermal evolution of the indentation-induced phases of silicon

Abstract

Novel phases of Si that are predicted to have industrially desirable properties can be recovered after indentation-induced pressure. However, the thermal stability of these phases is not well understood. Furthermore, in the past, different methods of annealing have resulted in conflicting reports on annealing stability and transformation pathways. This study investigates the thermal stability of several metastable Si phases called r8-Si, bc8-Si, hd-Si, and Si-XIII under furnace annealing, incremental annealing, and laser annealing using Raman microspectroscopy and electron diffraction. The temperature range of stability for these metastable phases is thus determined. Of particular interest, hd-Si is stable to a much higher temperature than previously reported, being the predominant phase observed in this study after annealing at 450 °C. This finding was enabled through a new method for confirming the presence of hd-Si by detailed electron diffraction. In conclusion, this high thermal stability generates renewed interest in exploiting this phase for industrial applications, such as strain-tailored solar absorption.

Authors:
ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [3]; ORCiD logo [4];  [2];  [5]; ORCiD logo [5]
  1. The Australian National Univ., Canberra (Australia); RMIT Univ., Victoria (Australia)
  2. The Univ. of Melbourne, Victoria (Australia)
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  4. Univ. de La Laguna, Tenerife (Spain)
  5. The Australian National Univ., Canberra (Australia)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1607248
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 126; Journal Issue: 10; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Wong, Sherman Y., Johnson, Brett C., Haberl, Bianca, Mujica, A., McCallum, Jeffrey C., Williams, James S., and Bradby, Jodie E. Thermal evolution of the indentation-induced phases of silicon. United States: N. p., 2019. Web. https://doi.org/10.1063/1.5108751.
Wong, Sherman Y., Johnson, Brett C., Haberl, Bianca, Mujica, A., McCallum, Jeffrey C., Williams, James S., & Bradby, Jodie E. Thermal evolution of the indentation-induced phases of silicon. United States. https://doi.org/10.1063/1.5108751
Wong, Sherman Y., Johnson, Brett C., Haberl, Bianca, Mujica, A., McCallum, Jeffrey C., Williams, James S., and Bradby, Jodie E. Mon . "Thermal evolution of the indentation-induced phases of silicon". United States. https://doi.org/10.1063/1.5108751. https://www.osti.gov/servlets/purl/1607248.
@article{osti_1607248,
title = {Thermal evolution of the indentation-induced phases of silicon},
author = {Wong, Sherman Y. and Johnson, Brett C. and Haberl, Bianca and Mujica, A. and McCallum, Jeffrey C. and Williams, James S. and Bradby, Jodie E.},
abstractNote = {Novel phases of Si that are predicted to have industrially desirable properties can be recovered after indentation-induced pressure. However, the thermal stability of these phases is not well understood. Furthermore, in the past, different methods of annealing have resulted in conflicting reports on annealing stability and transformation pathways. This study investigates the thermal stability of several metastable Si phases called r8-Si, bc8-Si, hd-Si, and Si-XIII under furnace annealing, incremental annealing, and laser annealing using Raman microspectroscopy and electron diffraction. The temperature range of stability for these metastable phases is thus determined. Of particular interest, hd-Si is stable to a much higher temperature than previously reported, being the predominant phase observed in this study after annealing at 450 °C. This finding was enabled through a new method for confirming the presence of hd-Si by detailed electron diffraction. In conclusion, this high thermal stability generates renewed interest in exploiting this phase for industrial applications, such as strain-tailored solar absorption.},
doi = {10.1063/1.5108751},
journal = {Journal of Applied Physics},
number = 10,
volume = 126,
place = {United States},
year = {2019},
month = {9}
}

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