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Title: Large amplitude charge noise and random telegraph fluctuations in room-temperature graphene single-electron transistors

Abstract

We analyze the noise in liquid-gated, room temperature, graphene quantum dots. These devices display extremely large noise amplitudes. The observed noise is explained in terms of a charge noise model by considering fluctuations in the applied source–drain and gate potentials. We show that the liquid environment and substrate have little effect on the observed noise and as such attribute the noise to charge trapping/detrapping at the disordered graphene edges. The trapping/detrapping of individual charges can be tuned by gating the device, which can result in stable two-level fluctuations in the measured current. These results have important implications for the use of electronic graphene nanodevices in single-molecule biosensing.

Authors:
ORCiD logo [1];  [1];  [1]; ORCiD logo [2]; ORCiD logo [1]; ORCiD logo [1]
  1. Univ. of Oxford (United Kingdom)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1607151
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Nanoscale
Additional Journal Information:
Journal Volume: 12; Journal Issue: 2; Journal ID: ISSN 2040-3364
Publisher:
Royal Society of Chemistry
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Fried, Jasper P., Bian, Xinya, Swett, Jacob L., Kravchenko, Ivan I., Briggs, G. Andrew D., and Mol, Jan A. Large amplitude charge noise and random telegraph fluctuations in room-temperature graphene single-electron transistors. United States: N. p., 2019. Web. https://doi.org/10.1039/c9nr08574b.
Fried, Jasper P., Bian, Xinya, Swett, Jacob L., Kravchenko, Ivan I., Briggs, G. Andrew D., & Mol, Jan A. Large amplitude charge noise and random telegraph fluctuations in room-temperature graphene single-electron transistors. United States. https://doi.org/10.1039/c9nr08574b
Fried, Jasper P., Bian, Xinya, Swett, Jacob L., Kravchenko, Ivan I., Briggs, G. Andrew D., and Mol, Jan A. Thu . "Large amplitude charge noise and random telegraph fluctuations in room-temperature graphene single-electron transistors". United States. https://doi.org/10.1039/c9nr08574b. https://www.osti.gov/servlets/purl/1607151.
@article{osti_1607151,
title = {Large amplitude charge noise and random telegraph fluctuations in room-temperature graphene single-electron transistors},
author = {Fried, Jasper P. and Bian, Xinya and Swett, Jacob L. and Kravchenko, Ivan I. and Briggs, G. Andrew D. and Mol, Jan A.},
abstractNote = {We analyze the noise in liquid-gated, room temperature, graphene quantum dots. These devices display extremely large noise amplitudes. The observed noise is explained in terms of a charge noise model by considering fluctuations in the applied source–drain and gate potentials. We show that the liquid environment and substrate have little effect on the observed noise and as such attribute the noise to charge trapping/detrapping at the disordered graphene edges. The trapping/detrapping of individual charges can be tuned by gating the device, which can result in stable two-level fluctuations in the measured current. These results have important implications for the use of electronic graphene nanodevices in single-molecule biosensing.},
doi = {10.1039/c9nr08574b},
journal = {Nanoscale},
number = 2,
volume = 12,
place = {United States},
year = {2019},
month = {12}
}

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