Nonvolatile Multilevel States in Multiferroic Tunnel Junctions
Abstract
Manipulation of tunneling spin-polarized electrons via a ferroelectric interlayer sandwiched between two ferromagnetic electrodes, dubbed multiferroic tunnel junctions (MFTJs), can be achieved not only by the magnetic alignment of two ferromagnets, but also by the electric polarization of the ferroelectric interlayer; this provides great opportunities for next-generation multistate memory devices. Here, we show that a La0.67Sr0.33MnO3(LSMO)/PbZr0.2Ti0.8O3(PZT)/Co structured MFTJ device can exhibit multilevel resistance states in the presence of gradually reversed ferroelectric domains via tunneling electroresistance and tunneling magnetoresistance, respectively. Nonvolatile ferroelectric control in the MFTJ can be attributed to separate contributions that arise from two independent ferroelectric channels in the PZT interlayer with opposite polarization. Our study shows the dominant role of “mixed” ferroelectric states on achieving accumulative electrical modulation of multilevel resistance states in MFTJs; thus paving the way for multifunctional device applications.
- Authors:
-
- Central South Univ. (China)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- North Carolina State Univ., Raleigh, NC (United States)
- Univ. of Nebraska, Lincoln, NE (United States)
- Fudan Univ., Shanghai (China)
- Publication Date:
- Research Org.:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1606673
- Grant/Contract Number:
- AC05-00OR22725
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review Applied
- Additional Journal Information:
- Journal Volume: 12; Journal Issue: 4; Journal ID: ISSN 2331-7019
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Electrical conductivity; Ferroelectricity; Ferromagnetism; Magnetoresistance; Spintronics; Artificial neural networks; Magnetic tunnel junctions; Multiferroics
Citation Formats
Fang, Mei, Zhang, Sangjian, Zhang, Wenchao, Jiang, Lu, Vetter, Eric, Lee, Ho Nyung, Xu, Xiaoshan, Sun, Dali, and Shen, Jian. Nonvolatile Multilevel States in Multiferroic Tunnel Junctions. United States: N. p., 2019.
Web. doi:10.1103/PhysRevApplied.12.044049.
Fang, Mei, Zhang, Sangjian, Zhang, Wenchao, Jiang, Lu, Vetter, Eric, Lee, Ho Nyung, Xu, Xiaoshan, Sun, Dali, & Shen, Jian. Nonvolatile Multilevel States in Multiferroic Tunnel Junctions. United States. https://doi.org/10.1103/PhysRevApplied.12.044049
Fang, Mei, Zhang, Sangjian, Zhang, Wenchao, Jiang, Lu, Vetter, Eric, Lee, Ho Nyung, Xu, Xiaoshan, Sun, Dali, and Shen, Jian. Tue .
"Nonvolatile Multilevel States in Multiferroic Tunnel Junctions". United States. https://doi.org/10.1103/PhysRevApplied.12.044049. https://www.osti.gov/servlets/purl/1606673.
@article{osti_1606673,
title = {Nonvolatile Multilevel States in Multiferroic Tunnel Junctions},
author = {Fang, Mei and Zhang, Sangjian and Zhang, Wenchao and Jiang, Lu and Vetter, Eric and Lee, Ho Nyung and Xu, Xiaoshan and Sun, Dali and Shen, Jian},
abstractNote = {Manipulation of tunneling spin-polarized electrons via a ferroelectric interlayer sandwiched between two ferromagnetic electrodes, dubbed multiferroic tunnel junctions (MFTJs), can be achieved not only by the magnetic alignment of two ferromagnets, but also by the electric polarization of the ferroelectric interlayer; this provides great opportunities for next-generation multistate memory devices. Here, we show that a La0.67Sr0.33MnO3(LSMO)/PbZr0.2Ti0.8O3(PZT)/Co structured MFTJ device can exhibit multilevel resistance states in the presence of gradually reversed ferroelectric domains via tunneling electroresistance and tunneling magnetoresistance, respectively. Nonvolatile ferroelectric control in the MFTJ can be attributed to separate contributions that arise from two independent ferroelectric channels in the PZT interlayer with opposite polarization. Our study shows the dominant role of “mixed” ferroelectric states on achieving accumulative electrical modulation of multilevel resistance states in MFTJs; thus paving the way for multifunctional device applications.},
doi = {10.1103/PhysRevApplied.12.044049},
journal = {Physical Review Applied},
number = 4,
volume = 12,
place = {United States},
year = {Tue Oct 22 00:00:00 EDT 2019},
month = {Tue Oct 22 00:00:00 EDT 2019}
}
Web of Science
Figures / Tables:
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