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Title: Nonvolatile Multilevel States in Multiferroic Tunnel Junctions

Abstract

Manipulation of tunneling spin-polarized electrons via a ferroelectric interlayer sandwiched between two ferromagnetic electrodes, dubbed multiferroic tunnel junctions (MFTJs), can be achieved not only by the magnetic alignment of two ferromagnets, but also by the electric polarization of the ferroelectric interlayer; this provides great opportunities for next-generation multistate memory devices. Here, we show that a La0.67Sr0.33MnO3(LSMO)/PbZr0.2Ti0.8O3(PZT)/Co structured MFTJ device can exhibit multilevel resistance states in the presence of gradually reversed ferroelectric domains via tunneling electroresistance and tunneling magnetoresistance, respectively. Nonvolatile ferroelectric control in the MFTJ can be attributed to separate contributions that arise from two independent ferroelectric channels in the PZT interlayer with opposite polarization. Our study shows the dominant role of “mixed” ferroelectric states on achieving accumulative electrical modulation of multilevel resistance states in MFTJs; thus paving the way for multifunctional device applications.

Authors:
ORCiD logo [1];  [1];  [1];  [2];  [3]; ORCiD logo [2];  [4];  [3];  [5]
  1. Central South Univ. (China)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  3. North Carolina State Univ., Raleigh, NC (United States)
  4. Univ. of Nebraska, Lincoln, NE (United States)
  5. Fudan Univ., Shanghai (China)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1606673
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Applied
Additional Journal Information:
Journal Volume: 12; Journal Issue: 4; Journal ID: ISSN 2331-7019
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Electrical conductivity; Ferroelectricity; Ferromagnetism; Magnetoresistance; Spintronics; Artificial neural networks; Magnetic tunnel junctions; Multiferroics

Citation Formats

Fang, Mei, Zhang, Sangjian, Zhang, Wenchao, Jiang, Lu, Vetter, Eric, Lee, Ho Nyung, Xu, Xiaoshan, Sun, Dali, and Shen, Jian. Nonvolatile Multilevel States in Multiferroic Tunnel Junctions. United States: N. p., 2019. Web. doi:10.1103/PhysRevApplied.12.044049.
Fang, Mei, Zhang, Sangjian, Zhang, Wenchao, Jiang, Lu, Vetter, Eric, Lee, Ho Nyung, Xu, Xiaoshan, Sun, Dali, & Shen, Jian. Nonvolatile Multilevel States in Multiferroic Tunnel Junctions. United States. https://doi.org/10.1103/PhysRevApplied.12.044049
Fang, Mei, Zhang, Sangjian, Zhang, Wenchao, Jiang, Lu, Vetter, Eric, Lee, Ho Nyung, Xu, Xiaoshan, Sun, Dali, and Shen, Jian. Tue . "Nonvolatile Multilevel States in Multiferroic Tunnel Junctions". United States. https://doi.org/10.1103/PhysRevApplied.12.044049. https://www.osti.gov/servlets/purl/1606673.
@article{osti_1606673,
title = {Nonvolatile Multilevel States in Multiferroic Tunnel Junctions},
author = {Fang, Mei and Zhang, Sangjian and Zhang, Wenchao and Jiang, Lu and Vetter, Eric and Lee, Ho Nyung and Xu, Xiaoshan and Sun, Dali and Shen, Jian},
abstractNote = {Manipulation of tunneling spin-polarized electrons via a ferroelectric interlayer sandwiched between two ferromagnetic electrodes, dubbed multiferroic tunnel junctions (MFTJs), can be achieved not only by the magnetic alignment of two ferromagnets, but also by the electric polarization of the ferroelectric interlayer; this provides great opportunities for next-generation multistate memory devices. Here, we show that a La0.67Sr0.33MnO3(LSMO)/PbZr0.2Ti0.8O3(PZT)/Co structured MFTJ device can exhibit multilevel resistance states in the presence of gradually reversed ferroelectric domains via tunneling electroresistance and tunneling magnetoresistance, respectively. Nonvolatile ferroelectric control in the MFTJ can be attributed to separate contributions that arise from two independent ferroelectric channels in the PZT interlayer with opposite polarization. Our study shows the dominant role of “mixed” ferroelectric states on achieving accumulative electrical modulation of multilevel resistance states in MFTJs; thus paving the way for multifunctional device applications.},
doi = {10.1103/PhysRevApplied.12.044049},
journal = {Physical Review Applied},
number = 4,
volume = 12,
place = {United States},
year = {2019},
month = {10}
}

Journal Article:
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Cited by: 7 works
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Figures / Tables:

FIG. 1 FIG. 1: Multiferroic tunnel junctions. (a) Schematic image of the LSMO/PZT/Co MFTJs. (b) Magnetic hysteresis loops of the LSMO and Co films used from FM electrodes with coercive fields of 40 Oe and 500 Oe, respectively. (c) IV curves of the junction (measured at 10 K and 2000 Oe) withmore » the PZT poled up and down, respectively. (d) Dynamic conductance (red square dots, PZT poled up) as a function of voltage, calculated from the I-V curve and the fit by the Brinkman model (blue solid line) in small voltage range. (e) Energy diagram of the MFTJ with PZT poled up and down, respectively.« less

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Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.