Search Menu
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information
Search Scholarly Publications

Title: Synchrotron characterization of high-Z, current-mode x-ray detectors

Abstract

Fast x-ray detectors are critical tools in pulsed power and fusion applications, where detector impulse response of a nanosecond or better is often required. Semiconductor detectors can create fast, sensitive devices with extensive operational flexibility. There is typically a trade-off between detector sensitivity and speed, but higher atomic number absorbers can increase hard x-ray absorption without increasing the charge collection time, provided carriers achieve high velocity. This paper presents x-ray pulse characterization conducted at the Advanced Photon Source of x-ray absorption efficiency and temporal impulse response of current-mode semiconductor x-ray detectors composed of Si, GaAs, and CdTe.

Authors:
ORCiD logo [1]; ORCiD logo [1];  [2];  [3];  [3];  [1]
+ Show Author Affiliations
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Argonne National Lab. (ANL), Argonne, IL (United States)
  3. Nagoya Inst. of Technology (Japan)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division
OSTI Identifier:
1605729
Alternate Identifier(s):
OSTI ID: 1599475; OSTI ID: 1614916
Report Number(s):
SAND-2020-2085J
Journal ID: ISSN 0034-6748; 684048; TRN: US2104710
Grant/Contract Number:  
AC04-94AL85000; AC02-06CH11357; NA0003525
Resource Type:
Accepted Manuscript
Journal Name:
Review of Scientific Instruments
Additional Journal Information:
Journal Volume: 91; Journal Issue: 2; Journal ID: ISSN 0034-6748
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION; Synchrotrons; Signal processing; Quantum efficiency; Semiconductor detectors; Monochromators; Epitaxy; Hard X-rays; X-ray absorption spectroscopy

Citation Formats

Looker, Quinn, Wood, Michael G., Miceli, Antonino, Niraula, Madan, Yasuda, Kazuhito, and Porter, John L. Synchrotron characterization of high-Z, current-mode x-ray detectors. United States: N. p., 2020. Web. doi:10.1063/1.5139403.
Copy to clipboard
Looker, Quinn, Wood, Michael G., Miceli, Antonino, Niraula, Madan, Yasuda, Kazuhito, & Porter, John L. Synchrotron characterization of high-Z, current-mode x-ray detectors. United States. https://doi.org/10.1063/1.5139403
Copy to clipboard
Looker, Quinn, Wood, Michael G., Miceli, Antonino, Niraula, Madan, Yasuda, Kazuhito, and Porter, John L. Thu . "Synchrotron characterization of high-Z, current-mode x-ray detectors". United States. https://doi.org/10.1063/1.5139403. https://www.osti.gov/servlets/purl/1605729.
Copy to clipboard
@article{osti_1605729,
title = {Synchrotron characterization of high-Z, current-mode x-ray detectors},
author = {Looker, Quinn and Wood, Michael G. and Miceli, Antonino and Niraula, Madan and Yasuda, Kazuhito and Porter, John L.},
abstractNote = {Fast x-ray detectors are critical tools in pulsed power and fusion applications, where detector impulse response of a nanosecond or better is often required. Semiconductor detectors can create fast, sensitive devices with extensive operational flexibility. There is typically a trade-off between detector sensitivity and speed, but higher atomic number absorbers can increase hard x-ray absorption without increasing the charge collection time, provided carriers achieve high velocity. This paper presents x-ray pulse characterization conducted at the Advanced Photon Source of x-ray absorption efficiency and temporal impulse response of current-mode semiconductor x-ray detectors composed of Si, GaAs, and CdTe.},
doi = {10.1063/1.5139403},
journal = {Review of Scientific Instruments},
number = 2,
volume = 91,
place = {United States},
year = {2020},
month = {2}
}
Copy to clipboard
Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1063/1.5139403
Copyright Statement
Other availability
Search WorldCat Search WorldCat to find libraries that may hold this journal
Citation Metrics:
Cited by: 1 work
Citation information provided by
Web of Science
Save / Share:
Export Metadata
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.

Works referenced in this record:

Picosecond Photoconductors as Radiation Detectors
journal, January 1986

  • Wagner, Ronald S.; Bradley, Jeffrey M.; Hammond, Robert B.
  • IEEE Transactions on Nuclear Science, Vol. 33, Issue 1
  • DOI: 10.1109/tns.1986.4337093

Gallium Arsenide detectors for X-ray and electron (beta particle) spectroscopy
journal, November 2016

  • Lioliou, G.; Barnett, A. M.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 836
  • DOI: 10.1016/j.nima.2016.08.047

Accurate determination of the ionization energy in semiconductor detectors
journal, February 1968

Characterization of CdTe sensors with Schottky contacts coupled to charge-integrating pixel array detectors for X-ray science
journal, December 2016

Development of Large-Area CdTe/n + -Si Epitaxial Layer-Based Heterojunction Diode-Type Gamma-Ray Detector Arrays
journal, April 2018

  • Niraula, M.; Yasuda, K.; Kojima, M.
  • IEEE Transactions on Nuclear Science, Vol. 65, Issue 4
  • DOI: 10.1109/tns.2018.2812154

MOVPE Growth of CdTe on Si Substrates for Gamma Ray Detector Fabrication
journal, June 2009

  • Niraula, Madan; Yasuda, Kazuhito; Watanabe, A.
  • IEEE Transactions on Nuclear Science, Vol. 56, Issue 3
  • DOI: 10.1109/tns.2008.2010256

X-Ray Interactions: Photoabsorption, Scattering, Transmission, and Reflection at E = 50-30,000 eV, Z = 1-92
journal, July 1993

  • Henke, B. L.; Gullikson, E. M.; Davis, J. C.
  • Atomic Data and Nuclear Data Tables, Vol. 54, Issue 2, p. 181-342
  • DOI: 10.1006/adnd.1993.1013

Impact of plasma effects on the performance of silicon sensors at an X-ray FEL
journal, April 2010

  • Becker, Julian; Eckstein, Doris; Klanner, Robert
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 615, Issue 2
  • DOI: 10.1016/j.nima.2010.01.082

Evaluation of epitaxial n-GaAs for nuclear radiation detection
journal, July 1971

A fast white-beam shutter for hard x-ray topography at beamline 1-BM of the Advanced Photon Source
journal, March 2014

GaAs x-ray detectors with sub-nanosecond temporal response
journal, November 2019

  • Looker, Quinn; Wood, Michael G.; Lake, Patrick W.
  • Review of Scientific Instruments, Vol. 90, Issue 11
  • DOI: 10.1063/1.5127294

30 μ m  thick GaAs X-ray p + -i-n + photodiode grown by MBE
journal, December 2019

  • Lioliou, G.; Poyser, C. L.; Butera, S.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 946
  • DOI: 10.1016/j.nima.2019.162670

Chromium compensated gallium arsenide detectors for X-ray and γ-ray spectroscopic imaging
journal, July 2014

  • Veale, M. C.; Bell, S. J.; Duarte, D. D.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 752
  • DOI: 10.1016/j.nima.2014.03.033

Cadmium Telluride Surface Barrier Detectors
journal, November 1970

  • Cornet, A.; Siffert, P.; Coche, A.
  • Applied Physics Letters, Vol. 17, Issue 10
  • DOI: 10.1063/1.1653259
    Sort by:
    [ × clear filter / sort ]

    Similar Records in DOE PAGES and OSTI.GOV collections: