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Title: Interfacial Impurities and Their Electronic Signatures in High-Voltage Regrown Nonpolar m-Plane GaN Vertical p–n Diodes

Abstract

Impacts of silicon, carbon, and oxygen interfacial impurities on the performance of high-voltage vertical GaN-based p–n diodes are investigated. The results indicate that moderate levels (≈5 × 1017 cm-3) of all interfacial impurities lead to reverse blocking voltages (Vb) greater than 200 V at 1 μA cm-2 and forward leakage of less than 1 µA cm-2 at 1.7 V. At higher interfacial impurity levels, the performance of the diodes becomes compromised. Herein, it is concluded that each impurity has a different effect on the device performance. For example, a high carbon spike at the junction correlates with high off-state leakage current in forward bias (≈100× higher forward leakage current compared with a reference diode), whereas the reverse bias behavior is not severely affected (> 200 V at 1 μA cm-2). High silicon and oxygen spikes at the junction strongly affect the reverse leakage currents (≈ 1–10 V at 1 μA cm-2). Regrown diodes with impurity (silicon, oxygen, and carbon) levels below 5 × 1017 cm-3 show comparable forward and reverse results with the reference continuously grown diodes. The effect of the regrowth interface position relative to the metallurgical junction on the diode performance is also discussed.

Authors:
ORCiD logo [1];  [1];  [1];  [2];  [2];  [2];  [2];  [1]
  1. Univ. of New Mexico, Albuquerque, NM (United States). Center for High-Technology Materials
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1605717
Alternate Identifier(s):
OSTI ID: 1580285
Report Number(s):
SAND-2020-2474J
Journal ID: ISSN 1862-6300; 684316
Grant/Contract Number:  
AC04-94AL85000; 16-CJ000-10-04
Resource Type:
Accepted Manuscript
Journal Name:
Physica Status Solidi. A, Applications and Materials Science
Additional Journal Information:
Journal Volume: 217; Journal Issue: 7; Journal ID: ISSN 1862-6300
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
GaN; interfacial impurities; nonpolar; p–n diodes; power electronics

Citation Formats

Aragon, Andrew, Monavarian, Morteza, Stricklin, Isaac, Pickrell, Greg, Crawford, Mary, Allerman, Andrew, Armstrong, Andrew M., and Feezell, Daniel. Interfacial Impurities and Their Electronic Signatures in High-Voltage Regrown Nonpolar m-Plane GaN Vertical p–n Diodes. United States: N. p., 2019. Web. doi:10.1002/pssa.201900757.
Aragon, Andrew, Monavarian, Morteza, Stricklin, Isaac, Pickrell, Greg, Crawford, Mary, Allerman, Andrew, Armstrong, Andrew M., & Feezell, Daniel. Interfacial Impurities and Their Electronic Signatures in High-Voltage Regrown Nonpolar m-Plane GaN Vertical p–n Diodes. United States. doi:https://doi.org/10.1002/pssa.201900757
Aragon, Andrew, Monavarian, Morteza, Stricklin, Isaac, Pickrell, Greg, Crawford, Mary, Allerman, Andrew, Armstrong, Andrew M., and Feezell, Daniel. Tue . "Interfacial Impurities and Their Electronic Signatures in High-Voltage Regrown Nonpolar m-Plane GaN Vertical p–n Diodes". United States. doi:https://doi.org/10.1002/pssa.201900757. https://www.osti.gov/servlets/purl/1605717.
@article{osti_1605717,
title = {Interfacial Impurities and Their Electronic Signatures in High-Voltage Regrown Nonpolar m-Plane GaN Vertical p–n Diodes},
author = {Aragon, Andrew and Monavarian, Morteza and Stricklin, Isaac and Pickrell, Greg and Crawford, Mary and Allerman, Andrew and Armstrong, Andrew M. and Feezell, Daniel},
abstractNote = {Impacts of silicon, carbon, and oxygen interfacial impurities on the performance of high-voltage vertical GaN-based p–n diodes are investigated. The results indicate that moderate levels (≈5 × 1017 cm-3) of all interfacial impurities lead to reverse blocking voltages (Vb) greater than 200 V at 1 μA cm-2 and forward leakage of less than 1 µA cm-2 at 1.7 V. At higher interfacial impurity levels, the performance of the diodes becomes compromised. Herein, it is concluded that each impurity has a different effect on the device performance. For example, a high carbon spike at the junction correlates with high off-state leakage current in forward bias (≈100× higher forward leakage current compared with a reference diode), whereas the reverse bias behavior is not severely affected (> 200 V at 1 μA cm-2). High silicon and oxygen spikes at the junction strongly affect the reverse leakage currents (≈ 1–10 V at 1 μA cm-2). Regrown diodes with impurity (silicon, oxygen, and carbon) levels below 5 × 1017 cm-3 show comparable forward and reverse results with the reference continuously grown diodes. The effect of the regrowth interface position relative to the metallurgical junction on the diode performance is also discussed.},
doi = {10.1002/pssa.201900757},
journal = {Physica Status Solidi. A, Applications and Materials Science},
number = 7,
volume = 217,
place = {United States},
year = {2019},
month = {12}
}

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