DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Reverse Heterojunction (Al)GaInP Solar Cells for Improved Efficiency at Concentration

Journal Article · · IEEE Journal of Photovoltaics

Mitigating series resistance is crucial to the efficiency of concentrator solar cells at high current density. Conventional AlGaInP junction designs for the top junction of III-V multijunction cells present a challenging tradeoff between series resistance on the one hand and current collection and voltage on the other hand. In this article we discuss the physics of a reverse heterojunction solar cell that aims to improve on this tradeoff by combining a high bandgap Al0.18Ga0.33In0.49P base and a lower bandgap (Al)GaInP emitter. The high mobility of the emitter leads to a relatively low series resistance, compared with a high bandgap homojunction cell. Furthermore, the electroluminescence spectrum shows emission peaks from both the emitter and base, leading to an open-circuit voltage that is not strictly dominated by either layer. The reverse heterojunction design is increasingly beneficial as the one-sun voltage increases.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
Grant/Contract Number:
AC36-08GO28308
OSTI ID:
1605706
Report Number(s):
NREL/JA--5900-74125; MainId:24483; UUID:f891a7d6-0888-e911-9c21-ac162d87dfe5; MainAdminID:12959
Journal Information:
IEEE Journal of Photovoltaics, Journal Name: IEEE Journal of Photovoltaics Journal Issue: 2 Vol. 10; ISSN 2156-3381
Publisher:
IEEECopyright Statement
Country of Publication:
United States
Language:
English