Light-Induced Currents at Domain Walls in Multiferroic BiFeO3
Abstract
Multiferroic BiFeO3 (BFO) films with spontaneously formed periodic stripe domains can generate above-gap open circuit voltages under visible light illumination; nevertheless the underlying mechanism behind this intriguing optoelectronic response has not been understood to date. Here, we make contact-free measurements of light-induced currents in epitaxial BFO films via detecting terahertz radiation emanated by these currents, enabling a direct probe of the intrinsic charge separation mechanisms along with quantitative measurements of the current amplitudes and their directions. In the periodic stripe samples, we find that the net photocurrent is dominated by the charge separation across the domain walls, whereas in the monodomain samples the photovoltaic response arises from a bulk shift current associated with the non-centrosymmetry of the crystal. The peak current amplitude driven by the charge separation at the domain walls is found to be 2 orders of magnitude higher than the bulk shift current response, indicating the prominent role of domain walls acting as nanoscale junctions to efficiently separate photogenerated charges in the stripe domain BFO films. These findings show that domain-wall-engineered BFO thin films offer exciting prospects for ferroelectric-based optoelectronics, as well as bias-free strong terahertz emitters.
- Authors:
-
[1];
[3];
[4];
[3];
[1]
- Stanford Univ., CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Cornell Univ., Ithaca, NY (United States)
- Univ. of California, Berkeley, CA (United States)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Stanford Univ., CA (United States)
- Publication Date:
- Research Org.:
- SLAC National Accelerator Lab., Menlo Park, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); US Army Research Office (ARO); National Science Foundation (NSF); Semiconductor Research Corporation (SRC); National Nanotechnology Coordinated Infrastructure (NNCI)
- OSTI Identifier:
- 1605384
- Alternate Identifier(s):
- OSTI ID: 1604721
- Grant/Contract Number:
- AC02-76SF00515; W911NF-14-1-0104; AC02-05CH11231; 2758.003; DMR-1708615; ECCS 1740136
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nano Letters
- Additional Journal Information:
- Journal Volume: 20; Journal Issue: 1; Journal ID: ISSN 1530-6984
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; ferroelectrics; BiFeO3; domain walls; photovoltaic effect; shift current; terahertz emission
Citation Formats
Guzelturk, Burak, Mei, Antonio B., Zhang, Lei, Tan, Liang Z., Donahue, Patrick, Singh, Anisha G., Schlom, Darrell G., Martin, Lane W., and Lindenberg, Aaron M. Light-Induced Currents at Domain Walls in Multiferroic BiFeO3. United States: N. p., 2019.
Web. doi:10.1021/acs.nanolett.9b03484.
Guzelturk, Burak, Mei, Antonio B., Zhang, Lei, Tan, Liang Z., Donahue, Patrick, Singh, Anisha G., Schlom, Darrell G., Martin, Lane W., & Lindenberg, Aaron M. Light-Induced Currents at Domain Walls in Multiferroic BiFeO3. United States. https://doi.org/10.1021/acs.nanolett.9b03484
Guzelturk, Burak, Mei, Antonio B., Zhang, Lei, Tan, Liang Z., Donahue, Patrick, Singh, Anisha G., Schlom, Darrell G., Martin, Lane W., and Lindenberg, Aaron M. Wed .
"Light-Induced Currents at Domain Walls in Multiferroic BiFeO3". United States. https://doi.org/10.1021/acs.nanolett.9b03484. https://www.osti.gov/servlets/purl/1605384.
@article{osti_1605384,
title = {Light-Induced Currents at Domain Walls in Multiferroic BiFeO3},
author = {Guzelturk, Burak and Mei, Antonio B. and Zhang, Lei and Tan, Liang Z. and Donahue, Patrick and Singh, Anisha G. and Schlom, Darrell G. and Martin, Lane W. and Lindenberg, Aaron M.},
abstractNote = {Multiferroic BiFeO3 (BFO) films with spontaneously formed periodic stripe domains can generate above-gap open circuit voltages under visible light illumination; nevertheless the underlying mechanism behind this intriguing optoelectronic response has not been understood to date. Here, we make contact-free measurements of light-induced currents in epitaxial BFO films via detecting terahertz radiation emanated by these currents, enabling a direct probe of the intrinsic charge separation mechanisms along with quantitative measurements of the current amplitudes and their directions. In the periodic stripe samples, we find that the net photocurrent is dominated by the charge separation across the domain walls, whereas in the monodomain samples the photovoltaic response arises from a bulk shift current associated with the non-centrosymmetry of the crystal. The peak current amplitude driven by the charge separation at the domain walls is found to be 2 orders of magnitude higher than the bulk shift current response, indicating the prominent role of domain walls acting as nanoscale junctions to efficiently separate photogenerated charges in the stripe domain BFO films. These findings show that domain-wall-engineered BFO thin films offer exciting prospects for ferroelectric-based optoelectronics, as well as bias-free strong terahertz emitters.},
doi = {10.1021/acs.nanolett.9b03484},
journal = {Nano Letters},
number = 1,
volume = 20,
place = {United States},
year = {Wed Nov 20 00:00:00 EST 2019},
month = {Wed Nov 20 00:00:00 EST 2019}
}
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