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Title: Strong correlations and orbital texture in single-layer 1T-TaSe2

Abstract

© 2020, The Author(s), under exclusive licence to Springer Nature Limited. Strong electron correlation can induce Mott insulating behaviour and produce intriguing states of matter such as unconventional superconductivity and quantum spin liquids. Recent advances in van der Waals material synthesis enable the exploration of Mott systems in the two-dimensional limit. Here we report characterization of the local electronic properties of single- and few-layer 1T-TaSe2 via spatial- and momentum-resolved spectroscopy involving scanning tunnelling microscopy and angle-resolved photoemission. Our results indicate that electron correlation induces a robust Mott insulator state in single-layer 1T-TaSe2 that is accompanied by unusual orbital texture. Interlayer coupling weakens the insulating phase, as shown by reduction of the energy gap and quenching of the correlation-driven orbital texture in bilayer and trilayer 1T-TaSe2. This establishes single-layer 1T-TaSe2 as a useful platform for investigating strong correlation physics in two dimensions.

Authors:
 [1];  [1];  [1]; ORCiD logo [2];  [3];  [4];  [5];  [5];  [5];  [6];  [7]; ORCiD logo [8];  [8]; ORCiD logo [9]; ORCiD logo [10];  [7];  [1]; ORCiD logo [8]; ORCiD logo [1]; ORCiD logo [11] more »; ORCiD logo [1] « less
  1. Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  2. SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Chinese Academy of Sciences (CAS), Shanghai (China); Shanghai Tech Univ. (China)
  3. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Korea Inst. of Science and Technology, Seoul (South Korea)
  4. Univ. of California, Berkeley, CA (United States); Shenzhen Univ. (China)
  5. Univ. of California, Berkeley, CA (United States)
  6. Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Henan Univ., Kaifeng (China)
  7. Georgetown Univ., Washington, DC (United States)
  8. SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., CA (United States)
  9. Chinese Academy of Sciences (CAS), Shanghai (China)
  10. SLAC National Accelerator Lab., Menlo Park, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  11. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Science Foundation (NSF); National Natural Science Foundation of China (NNSFC); National Research Foundation (NRF), Korea; Max Planc Korea; Shenzhen Peacock Plan; USDOE Office of Science (SC)
OSTI Identifier:
1605380
Alternate Identifier(s):
OSTI ID: 1604730
Grant/Contract Number:  
AC02-05CH11231; DMR-1508412; DMR-1926004; DMR-1507141; EFRI-1433307; 11227902; 2016K1A4A4A01922028; 827-000113; KQJSCX2017070727100802505; KQTD2016053112042971; EFMA-1542741; AC02-76SF00515
Resource Type:
Accepted Manuscript
Journal Name:
Nature Physics
Additional Journal Information:
Journal Volume: 16; Journal Issue: 2; Journal ID: ISSN 1745-2473
Publisher:
Nature Publishing Group (NPG)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; electronic properties and materials; quantum fluids and solids; surfaces, interfaces, and thin films

Citation Formats

Chen, Yi, Ruan, Wei, Wu, Meng, Tang, Shujie, Ryu, Hyejin, Tsai, Hsin-Zon, Lee, Ryan, Kahn, Salman, Liou, Franklin, Jia, Caihong, Albertini, Oliver R., Xiong, Hongyu, Jia, Tao, Liu, Zhi, Sobota, Jonathan A., Liu, Amy Y., Moore, Joel E., Shen, Zhi-Xun, Louie, Steven G., Mo, Sung-Kwan, and Crommie, Michael F. Strong correlations and orbital texture in single-layer 1T-TaSe2. United States: N. p., 2020. Web. doi:10.1038/s41567-019-0744-9.
Chen, Yi, Ruan, Wei, Wu, Meng, Tang, Shujie, Ryu, Hyejin, Tsai, Hsin-Zon, Lee, Ryan, Kahn, Salman, Liou, Franklin, Jia, Caihong, Albertini, Oliver R., Xiong, Hongyu, Jia, Tao, Liu, Zhi, Sobota, Jonathan A., Liu, Amy Y., Moore, Joel E., Shen, Zhi-Xun, Louie, Steven G., Mo, Sung-Kwan, & Crommie, Michael F. Strong correlations and orbital texture in single-layer 1T-TaSe2. United States. doi:https://doi.org/10.1038/s41567-019-0744-9
Chen, Yi, Ruan, Wei, Wu, Meng, Tang, Shujie, Ryu, Hyejin, Tsai, Hsin-Zon, Lee, Ryan, Kahn, Salman, Liou, Franklin, Jia, Caihong, Albertini, Oliver R., Xiong, Hongyu, Jia, Tao, Liu, Zhi, Sobota, Jonathan A., Liu, Amy Y., Moore, Joel E., Shen, Zhi-Xun, Louie, Steven G., Mo, Sung-Kwan, and Crommie, Michael F. Mon . "Strong correlations and orbital texture in single-layer 1T-TaSe2". United States. doi:https://doi.org/10.1038/s41567-019-0744-9. https://www.osti.gov/servlets/purl/1605380.
@article{osti_1605380,
title = {Strong correlations and orbital texture in single-layer 1T-TaSe2},
author = {Chen, Yi and Ruan, Wei and Wu, Meng and Tang, Shujie and Ryu, Hyejin and Tsai, Hsin-Zon and Lee, Ryan and Kahn, Salman and Liou, Franklin and Jia, Caihong and Albertini, Oliver R. and Xiong, Hongyu and Jia, Tao and Liu, Zhi and Sobota, Jonathan A. and Liu, Amy Y. and Moore, Joel E. and Shen, Zhi-Xun and Louie, Steven G. and Mo, Sung-Kwan and Crommie, Michael F.},
abstractNote = {© 2020, The Author(s), under exclusive licence to Springer Nature Limited. Strong electron correlation can induce Mott insulating behaviour and produce intriguing states of matter such as unconventional superconductivity and quantum spin liquids. Recent advances in van der Waals material synthesis enable the exploration of Mott systems in the two-dimensional limit. Here we report characterization of the local electronic properties of single- and few-layer 1T-TaSe2 via spatial- and momentum-resolved spectroscopy involving scanning tunnelling microscopy and angle-resolved photoemission. Our results indicate that electron correlation induces a robust Mott insulator state in single-layer 1T-TaSe2 that is accompanied by unusual orbital texture. Interlayer coupling weakens the insulating phase, as shown by reduction of the energy gap and quenching of the correlation-driven orbital texture in bilayer and trilayer 1T-TaSe2. This establishes single-layer 1T-TaSe2 as a useful platform for investigating strong correlation physics in two dimensions.},
doi = {10.1038/s41567-019-0744-9},
journal = {Nature Physics},
number = 2,
volume = 16,
place = {United States},
year = {2020},
month = {1}
}

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