Modeling of Impact Ionization and Charge Trapping in SuperCDMS HVeV Detectors
Abstract
Herein a model for charge trapping and impact ionization and an experiment to measure these parameters are presented for the SuperCDMS HVeV detector. A procedure to isolate and quantify the main sources of noise (bulk and surface charge leakage) in the measurements is also described. This sets the stage to precisely measure the charge trapping and impact ionization probabilities in order to incorporate this model into future dark matter searches.
- Authors:
-
- Stanford Univ., CA (United States)
- Univ. of California, Berkeley, CA (United States)
- SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., CA (United States). Kavli Inst. for Particle Astrophysics and Cosmology (KIPAC)
- Stanford Univ., CA (United States). Dept. of Physics and Kavli Inst. for Particle Astrophysics and Cosmology (KIPAC); SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
- Santa Clara Univ., Santa Clara, CA (United States)
- Publication Date:
- Research Org.:
- SLAC National Accelerator Lab., Menlo Park, CA (United States); Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
- Sponsoring Org.:
- National Science foundation (NSF); USDOE Office of Science (SC), High Energy Physics (HEP)
- OSTI Identifier:
- 1605192
- Grant/Contract Number:
- AC02-76SF00515; AC02-07CH11359
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Low Temperature Physics
- Additional Journal Information:
- Journal Volume: 199; Journal ID: ISSN 0022-2291
- Publisher:
- Springer
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS; Electron; Hole; e−h+ pairs; Quantization; Phonons; Quasiparticles; Silicon; Superconducting TES; Impact ionization; Charge trapping
Citation Formats
Ponce, F., Page, W., Brink, P. L., Cabrera, B., Cherry, M., Fink, C., Kurinsky, N., Partridge, R., Pyle, M., Sadoulet, B., Serfass, B., Stanford, C., Watkins, S., Yellin, S., and Young, B. A. Modeling of Impact Ionization and Charge Trapping in SuperCDMS HVeV Detectors. United States: N. p., 2020.
Web. doi:10.1007/s10909-020-02349-x.
Ponce, F., Page, W., Brink, P. L., Cabrera, B., Cherry, M., Fink, C., Kurinsky, N., Partridge, R., Pyle, M., Sadoulet, B., Serfass, B., Stanford, C., Watkins, S., Yellin, S., & Young, B. A. Modeling of Impact Ionization and Charge Trapping in SuperCDMS HVeV Detectors. United States. doi:https://doi.org/10.1007/s10909-020-02349-x
Ponce, F., Page, W., Brink, P. L., Cabrera, B., Cherry, M., Fink, C., Kurinsky, N., Partridge, R., Pyle, M., Sadoulet, B., Serfass, B., Stanford, C., Watkins, S., Yellin, S., and Young, B. A. Sat .
"Modeling of Impact Ionization and Charge Trapping in SuperCDMS HVeV Detectors". United States. doi:https://doi.org/10.1007/s10909-020-02349-x. https://www.osti.gov/servlets/purl/1605192.
@article{osti_1605192,
title = {Modeling of Impact Ionization and Charge Trapping in SuperCDMS HVeV Detectors},
author = {Ponce, F. and Page, W. and Brink, P. L. and Cabrera, B. and Cherry, M. and Fink, C. and Kurinsky, N. and Partridge, R. and Pyle, M. and Sadoulet, B. and Serfass, B. and Stanford, C. and Watkins, S. and Yellin, S. and Young, B. A.},
abstractNote = {Herein a model for charge trapping and impact ionization and an experiment to measure these parameters are presented for the SuperCDMS HVeV detector. A procedure to isolate and quantify the main sources of noise (bulk and surface charge leakage) in the measurements is also described. This sets the stage to precisely measure the charge trapping and impact ionization probabilities in order to incorporate this model into future dark matter searches.},
doi = {10.1007/s10909-020-02349-x},
journal = {Journal of Low Temperature Physics},
number = ,
volume = 199,
place = {United States},
year = {2020},
month = {2}
}
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