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Title: Modeling of Impact Ionization and Charge Trapping in SuperCDMS HVeV Detectors

Abstract

Herein a model for charge trapping and impact ionization and an experiment to measure these parameters are presented for the SuperCDMS HVeV detector. A procedure to isolate and quantify the main sources of noise (bulk and surface charge leakage) in the measurements is also described. This sets the stage to precisely measure the charge trapping and impact ionization probabilities in order to incorporate this model into future dark matter searches.

Authors:
ORCiD logo [1];  [2];  [3];  [4];  [3];  [2];  [5];  [3];  [2];  [2];  [2];  [1];  [2];  [1];  [6]
+ Show Author Affiliations
  1. Stanford Univ., CA (United States)
  2. Univ. of California, Berkeley, CA (United States)
  3. SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., CA (United States). Kavli Inst. for Particle Astrophysics and Cosmology (KIPAC)
  4. Stanford Univ., CA (United States). Dept. of Physics and Kavli Inst. for Particle Astrophysics and Cosmology (KIPAC); SLAC National Accelerator Lab., Menlo Park, CA (United States)
  5. Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
  6. Santa Clara Univ., Santa Clara, CA (United States)
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States); Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
Sponsoring Org.:
National Science foundation (NSF); USDOE Office of Science (SC), High Energy Physics (HEP)
OSTI Identifier:
1605192
Grant/Contract Number:  
AC02-76SF00515; AC02-07CH11359
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Low Temperature Physics
Additional Journal Information:
Journal Volume: 199; Journal ID: ISSN 0022-2291
Publisher:
Springer
Country of Publication:
United States
Language:
English
Subject:
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS; Electron; Hole; e−h+ pairs; Quantization; Phonons; Quasiparticles; Silicon; Superconducting TES; Impact ionization; Charge trapping

Citation Formats

Ponce, F., Page, W., Brink, P. L., Cabrera, B., Cherry, M., Fink, C., Kurinsky, N., Partridge, R., Pyle, M., Sadoulet, B., Serfass, B., Stanford, C., Watkins, S., Yellin, S., and Young, B. A. Modeling of Impact Ionization and Charge Trapping in SuperCDMS HVeV Detectors. United States: N. p., 2020. Web. doi:10.1007/s10909-020-02349-x.
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Ponce, F., Page, W., Brink, P. L., Cabrera, B., Cherry, M., Fink, C., Kurinsky, N., Partridge, R., Pyle, M., Sadoulet, B., Serfass, B., Stanford, C., Watkins, S., Yellin, S., & Young, B. A. Modeling of Impact Ionization and Charge Trapping in SuperCDMS HVeV Detectors. United States. doi:https://doi.org/10.1007/s10909-020-02349-x
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Ponce, F., Page, W., Brink, P. L., Cabrera, B., Cherry, M., Fink, C., Kurinsky, N., Partridge, R., Pyle, M., Sadoulet, B., Serfass, B., Stanford, C., Watkins, S., Yellin, S., and Young, B. A. Sat . "Modeling of Impact Ionization and Charge Trapping in SuperCDMS HVeV Detectors". United States. doi:https://doi.org/10.1007/s10909-020-02349-x. https://www.osti.gov/servlets/purl/1605192.
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@article{osti_1605192,
title = {Modeling of Impact Ionization and Charge Trapping in SuperCDMS HVeV Detectors},
author = {Ponce, F. and Page, W. and Brink, P. L. and Cabrera, B. and Cherry, M. and Fink, C. and Kurinsky, N. and Partridge, R. and Pyle, M. and Sadoulet, B. and Serfass, B. and Stanford, C. and Watkins, S. and Yellin, S. and Young, B. A.},
abstractNote = {Herein a model for charge trapping and impact ionization and an experiment to measure these parameters are presented for the SuperCDMS HVeV detector. A procedure to isolate and quantify the main sources of noise (bulk and surface charge leakage) in the measurements is also described. This sets the stage to precisely measure the charge trapping and impact ionization probabilities in order to incorporate this model into future dark matter searches.},
doi = {10.1007/s10909-020-02349-x},
journal = {Journal of Low Temperature Physics},
number = ,
volume = 199,
place = {United States},
year = {2020},
month = {2}
}
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Journal Article:
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Publisher's Version of Record
DOI:  https://doi.org/10.1007/s10909-020-02349-x
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