Modeling of Impact Ionization and Charge Trapping in SuperCDMS HVeV Detectors

Ponce, F.; Page, W.; Brink, P. L.; Cabrera, B.; Cherry, M.; Fink, C.; Kurinsky, N.; Partridge, R.; Pyle, M.; Sadoulet, B.; Serfass, B.; Stanford, C.; Watkins, S.; Yellin, S.; Young, B. A.

doi:10.1007/s10909-020-02349-x

Title: Modeling of Impact Ionization and Charge Trapping in SuperCDMS HVeV Detectors

Abstract

Herein a model for charge trapping and impact ionization and an experiment to measure these parameters are presented for the SuperCDMS HVeV detector. A procedure to isolate and quantify the main sources of noise (bulk and surface charge leakage) in the measurements is also described. This sets the stage to precisely measure the charge trapping and impact ionization probabilities in order to incorporate this model into future dark matter searches.

Authors:

^[1]; Page, W. ^[2]; Brink, P. L. ^[3]; Cabrera, B. ^[4]; Cherry, M. ^[3]; Fink, C. ^[2]; Kurinsky, N. ^[5]; Partridge, R. ^[3]; Pyle, M. ^[2]; Sadoulet, B. ^[2]; Serfass, B. ^[2]; Stanford, C. ^[1]; Watkins, S. ^[2]; Yellin, S. ^[1]; Young, B. A. ^[6]

Stanford Univ., CA (United States)
Univ. of California, Berkeley, CA (United States)
SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., CA (United States). Kavli Inst. for Particle Astrophysics and Cosmology (KIPAC)
Stanford Univ., CA (United States). Dept. of Physics and Kavli Inst. for Particle Astrophysics and Cosmology (KIPAC); SLAC National Accelerator Lab., Menlo Park, CA (United States)
Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
Santa Clara Univ., Santa Clara, CA (United States)

Publication Date:: Sat Feb 01 00:00:00 EST 2020

Research Org.:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States); Fermi National Accelerator Laboratory (FNAL), Batavia, IL (United States)

Sponsoring Org.:: National Science foundation (NSF); USDOE Office of Science (SC), High Energy Physics (HEP)

OSTI Identifier:: 1605192

Grant/Contract Number:: AC02-76SF00515; AC02-07CH11359

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Low Temperature Physics

Additional Journal Information:: Journal Volume: 199; Journal ID: ISSN 0022-2291

Publisher:: Springer

Country of Publication:: United States

Language:: English

Subject:: 72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS; Electron; Hole; e−h+ pairs; Quantization; Phonons; Quasiparticles; Silicon; Superconducting TES; Impact ionization; Charge trapping

Citation Formats


                    Ponce, F., Page, W., Brink, P. L., Cabrera, B., Cherry, M., Fink, C., Kurinsky, N., Partridge, R., Pyle, M., Sadoulet, B., Serfass, B., Stanford, C., Watkins, S., Yellin, S., and Young, B. A. Modeling of Impact Ionization and Charge Trapping in SuperCDMS HVeV Detectors.  United States: N. p., 2020. 
Web.  doi:10.1007/s10909-020-02349-x.

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                    Ponce, F., Page, W., Brink, P. L., Cabrera, B., Cherry, M., Fink, C., Kurinsky, N., Partridge, R., Pyle, M., Sadoulet, B., Serfass, B., Stanford, C., Watkins, S., Yellin, S., & Young, B. A. Modeling of Impact Ionization and Charge Trapping in SuperCDMS HVeV Detectors.  United States.  https://doi.org/10.1007/s10909-020-02349-x

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                    Ponce, F., Page, W., Brink, P. L., Cabrera, B., Cherry, M., Fink, C., Kurinsky, N., Partridge, R., Pyle, M., Sadoulet, B., Serfass, B., Stanford, C., Watkins, S., Yellin, S., and Young, B. A. Sat .  
"Modeling of Impact Ionization and Charge Trapping in SuperCDMS HVeV Detectors".  United States.  https://doi.org/10.1007/s10909-020-02349-x.  https://www.osti.gov/servlets/purl/1605192.

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@article{osti_1605192,

  title        = {Modeling of Impact Ionization and Charge Trapping in SuperCDMS HVeV Detectors},

  author       = {Ponce, F. and Page, W. and Brink, P. L. and Cabrera, B. and Cherry, M. and Fink, C. and Kurinsky, N. and Partridge, R. and Pyle, M. and Sadoulet, B. and Serfass, B. and Stanford, C. and Watkins, S. and Yellin, S. and Young, B. A.},

  abstractNote = {Herein a model for charge trapping and impact ionization and an experiment to measure these parameters are presented for the SuperCDMS HVeV detector. A procedure to isolate and quantify the main sources of noise (bulk and surface charge leakage) in the measurements is also described. This sets the stage to precisely measure the charge trapping and impact ionization probabilities in order to incorporate this model into future dark matter searches.},

  doi          = {10.1007/s10909-020-02349-x},

  journal      = {Journal of Low Temperature Physics},

  number       = ,

  volume       = 199,

  place        = {United States},

  year         = {Sat Feb 01 00:00:00 EST 2020},

  month        = {Sat Feb 01 00:00:00 EST 2020}

}

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Works referenced in this record:

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First Dark Matter Constraints from a SuperCDMS Single-Charge Sensitive Detector
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Title: Modeling of Impact Ionization and Charge Trapping in SuperCDMS HVeV Detectors

Abstract

Citation Formats

Voltage‐assisted calorimetric ionization detector journal, December 1988

Thermal detection of single e-h pairs in a biased silicon crystal detector journal, January 2018

Single-Electron and Single-Photon Sensitivity with a Silicon Skipper CCD journal, September 2017

Energy-Resolved Measurements of the Phonon-Ionization of D − and A + Centers in Silicon with Superconducting-Al Tunnel Junctions journal, November 1984

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Searching for ϵ charges and a new U(1) journal, September 1986

A method to define the energy threshold depending on noise level for rare event searches journal, October 2019

Direct detection of sub-GeV dark matter journal, April 2012

First Dark Matter Constraints from a SuperCDMS Single-Charge Sensitive Detector journal, August 2018

Thermal detection of single e-h pairs in a biased silicon crystal detector text, January 2017

First Dark Matter Constraints from a SuperCDMS Single-Charge Sensitive Detector text, January 2018

Electronic structure of copper, silver, and gold impurities in silicon journal, July 1985

Voltage‐assisted calorimetric ionization detector
journal, December 1988

Thermal detection of single e-h pairs in a biased silicon crystal detector
journal, January 2018

Single-Electron and Single-Photon Sensitivity with a Silicon Skipper CCD
journal, September 2017

Energy-Resolved Measurements of the Phonon-Ionization of $D^{-}$ and $A^{+}$ Centers in Silicon with Superconducting-Al Tunnel Junctions
journal, November 1984

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