Titanium Nitride Modified Photoluminescence from Single Semiconductor Nanoplatelets

Peng, Lintao; Wang, Xuejing; Coropceanu, Igor; Martinson, Alex B.; Wang, Haiyan; Talapin, Dmitri V.; Ma, Xuedan

doi:10.1002/adfm.201904179

Title: Titanium Nitride Modified Photoluminescence from Single Semiconductor Nanoplatelets

Journal Article · 31 October 2019 · Advanced Functional Materials

DOI: https://doi.org/10.1002/adfm.201904179 · OSTI ID:1605170

Peng, Lintao ^[1]; Wang, Xuejing ^[2]; Coropceanu, Igor ^[3]; Martinson, Alex B. ^[4]; Wang, Haiyan ^[2]; Talapin, Dmitri V. ^[3];

^[1]

Argonne National Lab. (ANL), Lemont, IL (United States). Center for Nanoscale Materials
Purdue Univ., West Lafayette, IN (United States)
Univ. of Chicago, IL (United States)
Argonne National Lab. (ANL), Lemont, IL (United States)

Titanium nitride (TiN) is an alternative plasmonic material that has the potential for visible and near-infrared optical applications due to its distinct properties. In this work, coupling effects between TiN nanohole array films and nearby excitonic emitters, semiconductor nanoplatelets (NPLs), are investigated using single particle spectroscopy. At the emission wavelength of the NPLs, the local field enhancement close to the surface of the TiN nanohole array films induces an increase in the radiative decay rates of the emitters by a factor of up to 2. This effect diminishes quickly as the distance between the TiN nanohole array films and emitters increases. At short wavelengths where the NPLs are excited, the TiN nanohole array films exhibit lossy dielectric characteristics. Local field modification at these wavelengths leads to a reduced local density of electromagnetic states, and hence the photoluminescence intensity of the emitters. This study shows the potential of TiN as an alternative plasmonic material for optoelectronic and photonic applications, especially in the long wavelength ranges.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States). Center for Nanoscale Materials

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Science Foundation (NSF); US Air Force Office of Scientific Research (AFOSR)

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1605170

Journal Information:: Advanced Functional Materials, Journal Name: Advanced Functional Materials Journal Issue: 4 Vol. 30; ISSN 1616-301X

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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