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Title: Titanium Nitride Modified Photoluminescence from Single Semiconductor Nanoplatelets

Abstract

Titanium nitride (TiN) is an alternative plasmonic material that has the potential for visible and near-infrared optical applications due to its distinct properties. In this work, coupling effects between TiN nanohole array films and nearby excitonic emitters, semiconductor nanoplatelets (NPLs), are investigated using single particle spectroscopy. At the emission wavelength of the NPLs, the local field enhancement close to the surface of the TiN nanohole array films induces an increase in the radiative decay rates of the emitters by a factor of up to 2. This effect diminishes quickly as the distance between the TiN nanohole array films and emitters increases. At short wavelengths where the NPLs are excited, the TiN nanohole array films exhibit lossy dielectric characteristics. Local field modification at these wavelengths leads to a reduced local density of electromagnetic states, and hence the photoluminescence intensity of the emitters. This study shows the potential of TiN as an alternative plasmonic material for optoelectronic and photonic applications, especially in the long wavelength ranges.

Authors:
 [1];  [2];  [3];  [4];  [2];  [3]; ORCiD logo [1]
  1. Argonne National Lab. (ANL), Lemont, IL (United States). Center for Nanoscale Materials
  2. Purdue Univ., West Lafayette, IN (United States)
  3. Univ. of Chicago, IL (United States)
  4. Argonne National Lab. (ANL), Lemont, IL (United States)
Publication Date:
Research Org.:
Argonne National Laboratory (ANL), Argonne, IL (United States). Center for Nanoscale Materials
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); US Air Force Office of Scientific Research (AFOSR)
OSTI Identifier:
1605170
Alternate Identifier(s):
OSTI ID: 1572582
Grant/Contract Number:  
AC02-06CH11357; CHE-1611331; FA9550-15-1-0099; DMR-1809520
Resource Type:
Accepted Manuscript
Journal Name:
Advanced Functional Materials
Additional Journal Information:
Journal Volume: 30; Journal Issue: 4; Journal ID: ISSN 1616-301X
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Purcell effect; nanohole array; semiconductor nanoplatelets; surface plasmons; titanium nitride

Citation Formats

Peng, Lintao, Wang, Xuejing, Coropceanu, Igor, Martinson, Alex B., Wang, Haiyan, Talapin, Dmitri V., and Ma, Xuedan. Titanium Nitride Modified Photoluminescence from Single Semiconductor Nanoplatelets. United States: N. p., 2019. Web. doi:10.1002/adfm.201904179.
Peng, Lintao, Wang, Xuejing, Coropceanu, Igor, Martinson, Alex B., Wang, Haiyan, Talapin, Dmitri V., & Ma, Xuedan. Titanium Nitride Modified Photoluminescence from Single Semiconductor Nanoplatelets. United States. doi:https://doi.org/10.1002/adfm.201904179
Peng, Lintao, Wang, Xuejing, Coropceanu, Igor, Martinson, Alex B., Wang, Haiyan, Talapin, Dmitri V., and Ma, Xuedan. Thu . "Titanium Nitride Modified Photoluminescence from Single Semiconductor Nanoplatelets". United States. doi:https://doi.org/10.1002/adfm.201904179. https://www.osti.gov/servlets/purl/1605170.
@article{osti_1605170,
title = {Titanium Nitride Modified Photoluminescence from Single Semiconductor Nanoplatelets},
author = {Peng, Lintao and Wang, Xuejing and Coropceanu, Igor and Martinson, Alex B. and Wang, Haiyan and Talapin, Dmitri V. and Ma, Xuedan},
abstractNote = {Titanium nitride (TiN) is an alternative plasmonic material that has the potential for visible and near-infrared optical applications due to its distinct properties. In this work, coupling effects between TiN nanohole array films and nearby excitonic emitters, semiconductor nanoplatelets (NPLs), are investigated using single particle spectroscopy. At the emission wavelength of the NPLs, the local field enhancement close to the surface of the TiN nanohole array films induces an increase in the radiative decay rates of the emitters by a factor of up to 2. This effect diminishes quickly as the distance between the TiN nanohole array films and emitters increases. At short wavelengths where the NPLs are excited, the TiN nanohole array films exhibit lossy dielectric characteristics. Local field modification at these wavelengths leads to a reduced local density of electromagnetic states, and hence the photoluminescence intensity of the emitters. This study shows the potential of TiN as an alternative plasmonic material for optoelectronic and photonic applications, especially in the long wavelength ranges.},
doi = {10.1002/adfm.201904179},
journal = {Advanced Functional Materials},
number = 4,
volume = 30,
place = {United States},
year = {2019},
month = {10}
}

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