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Title: High temperature Hall-effect investigations of Cd 0.85Mn 0.10Zn 0.05Te crystals

Abstract

High temperature Hall-effect investigations were used to study the change of the concentration and mobility of charge-carriers in Cd 0.85Mn 0.10Zn 0.05Te and Cd 0.85Mn 0.10Zn 0.05Te : In crystals grown by the vertical Bridgman technique. The Cd 0.85Mn 0.10Zn 0.05Te and Cd 0.85Mn 0.10Zn 0.05Te : In samples are characterized by optical and electrical measurements, and by IR-microscopy. We determined that the value of band gap increase with the Mn and Zn amount increasing in the Cd 1-x-yMn xZn yTe crystals. We also show that after the high-temperature Hall-effect measurements performed under Cd overpressure the both crystals resistivity increase from 10 4 Ohm×cm to 10 6 Ohm×cm, and amount and size of Te inclusions decrease. According to the results of the high temperature Hall-effect investigations the temperatures and Cd vapor pressures intervals were established in which Indium plays major role and controls the concentration of charge carriers.

Authors:
 [1];  [1];  [1];  [1];  [1];  [2];  [3]
  1. Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
  3. Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL)
Publication Date:
Research Org.:
Savannah River Site (SRS), Aiken, SC (United States); Savannah River National Lab (SRNL), Aiken, SC (United States)
Sponsoring Org.:
USDOE Office of Environmental Management (EM)
OSTI Identifier:
1604908
Report Number(s):
[SRNL-STI-2019-00486]
[Journal ID: ISSN 0277-786X]
Grant/Contract Number:  
[AC09-08SR22470]
Resource Type:
Accepted Manuscript
Journal Name:
Proceedings of SPIE - The International Society for Optical Engineering
Additional Journal Information:
[ Journal Volume: 111141]; Journal ID: ISSN 0277-786X
Publisher:
SPIE
Country of Publication:
United States
Language:
English
Subject:
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS

Citation Formats

Kopach, Vasylyna, Kopach, Oleh, Kanak, Andriy, Shcherbak, Larysa, Fochuk, Petro, Bolotnikov, Aleksey E., and James, Ralph B. High temperature Hall-effect investigations of Cd0.85Mn0.10Zn0.05Te crystals. United States: N. p., 2019. Web. doi:10.1117/12.2529066.
Kopach, Vasylyna, Kopach, Oleh, Kanak, Andriy, Shcherbak, Larysa, Fochuk, Petro, Bolotnikov, Aleksey E., & James, Ralph B. High temperature Hall-effect investigations of Cd0.85Mn0.10Zn0.05Te crystals. United States. doi:10.1117/12.2529066.
Kopach, Vasylyna, Kopach, Oleh, Kanak, Andriy, Shcherbak, Larysa, Fochuk, Petro, Bolotnikov, Aleksey E., and James, Ralph B. Mon . "High temperature Hall-effect investigations of Cd0.85Mn0.10Zn0.05Te crystals". United States. doi:10.1117/12.2529066.
@article{osti_1604908,
title = {High temperature Hall-effect investigations of Cd0.85Mn0.10Zn0.05Te crystals},
author = {Kopach, Vasylyna and Kopach, Oleh and Kanak, Andriy and Shcherbak, Larysa and Fochuk, Petro and Bolotnikov, Aleksey E. and James, Ralph B.},
abstractNote = {High temperature Hall-effect investigations were used to study the change of the concentration and mobility of charge-carriers in Cd0.85Mn0.10Zn0.05Te and Cd0.85Mn0.10Zn0.05Te : In crystals grown by the vertical Bridgman technique. The Cd0.85Mn0.10Zn0.05Te and Cd0.85Mn0.10Zn0.05Te : In samples are characterized by optical and electrical measurements, and by IR-microscopy. We determined that the value of band gap increase with the Mn and Zn amount increasing in the Cd1-x-yMnxZnyTe crystals. We also show that after the high-temperature Hall-effect measurements performed under Cd overpressure the both crystals resistivity increase from 104 Ohm×cm to 106 Ohm×cm, and amount and size of Te inclusions decrease. According to the results of the high temperature Hall-effect investigations the temperatures and Cd vapor pressures intervals were established in which Indium plays major role and controls the concentration of charge carriers.},
doi = {10.1117/12.2529066},
journal = {Proceedings of SPIE - The International Society for Optical Engineering},
number = ,
volume = [111141],
place = {United States},
year = {2019},
month = {9}
}

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Works referenced in this record:

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