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Title: Dynamics and manipulation of ferroelectric domain walls in bismuth ferrite thin films

Abstract

Ferroelectric domain walls differ from domains not only in their crystalline and discrete symmetry, but also in their electronic, magnetic, and mechanical properties. Although domain walls provide a degree of freedom to regulate the physical properties at the nanoscale, the relatively lower controllability prevents their practical applications in nano-devices. In this work, with the advantages of 3D domain configuration detection based on piezoresponse force microscopy, we find that the mobility of three types of domain walls (tail-to-tail, head-to-tail, head-to-head) in (001) BiFeO3 films varies with the applied electrical field. Under low voltages, head-to-tail domain walls are more mobile than other domain walls, while, under high voltages, tail-to-tail domain walls become rather active and possess relatively long average lengths. This is due to the high nucleation energy and relatively low growth energy for charged domain walls. Finally, we demonstrate the manipulation of domain walls through successive electric writings, resulting in well-aligned conduction paths as designed, paving the way for their application in advanced spintronic, memory and communication nano-devices.

Authors:
ORCiD logo [1];  [1];  [2];  [3]; ORCiD logo [4];  [1];  [2];  [1]
  1. Nanjing Univ. (China). National Lab. of Solid State Microstructures. Physics School
  2. Nanjing Univ. (China). National Lab. of Solid State Microstructures. Physics School; Nanjing Univ. (China). Collaborative Innovation Center of Advanced Microstructures
  3. Rutgers Univ., Piscataway, NJ (United States). Dept. of Physics and Astronomy. Rutgers Center for Emergent Materials
  4. Chinese Academy of Sciences, Shenzhen (China). Shenzhen Insts. of Advanced Technology. Shenzhen Key Lab. of Nanobiomechanics; Univ. of Washington, Seattle, WA (United States). Dept. of Mechanical Engineering
Publication Date:
Research Org.:
Rutgers Univ., Piscataway, NJ (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1604835
Alternate Identifier(s):
OSTI ID: 1800456
Grant/Contract Number:  
FG02-07ER46382
Resource Type:
Published Article
Journal Name:
National Science Review
Additional Journal Information:
Journal Volume: 7; Journal Issue: 2; Journal ID: ISSN 2095-5138
Publisher:
China Science Publishing
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Science & Technology - Other Topics; domain wall; ferroelectric; thin film; piezoresponse force microscopy; dynamics

Citation Formats

Xiao, Shuyu, Jin, Yaming, Lu, Xiaomei, Cheong, Sang-Wook, Li, Jiangyu, Li, Yang, Huang, Fengzhen, and Zhu, Jinsong. Dynamics and manipulation of ferroelectric domain walls in bismuth ferrite thin films. United States: N. p., 2019. Web. doi:10.1093/nsr/nwz176.
Xiao, Shuyu, Jin, Yaming, Lu, Xiaomei, Cheong, Sang-Wook, Li, Jiangyu, Li, Yang, Huang, Fengzhen, & Zhu, Jinsong. Dynamics and manipulation of ferroelectric domain walls in bismuth ferrite thin films. United States. https://doi.org/10.1093/nsr/nwz176
Xiao, Shuyu, Jin, Yaming, Lu, Xiaomei, Cheong, Sang-Wook, Li, Jiangyu, Li, Yang, Huang, Fengzhen, and Zhu, Jinsong. Fri . "Dynamics and manipulation of ferroelectric domain walls in bismuth ferrite thin films". United States. https://doi.org/10.1093/nsr/nwz176.
@article{osti_1604835,
title = {Dynamics and manipulation of ferroelectric domain walls in bismuth ferrite thin films},
author = {Xiao, Shuyu and Jin, Yaming and Lu, Xiaomei and Cheong, Sang-Wook and Li, Jiangyu and Li, Yang and Huang, Fengzhen and Zhu, Jinsong},
abstractNote = {Ferroelectric domain walls differ from domains not only in their crystalline and discrete symmetry, but also in their electronic, magnetic, and mechanical properties. Although domain walls provide a degree of freedom to regulate the physical properties at the nanoscale, the relatively lower controllability prevents their practical applications in nano-devices. In this work, with the advantages of 3D domain configuration detection based on piezoresponse force microscopy, we find that the mobility of three types of domain walls (tail-to-tail, head-to-tail, head-to-head) in (001) BiFeO3 films varies with the applied electrical field. Under low voltages, head-to-tail domain walls are more mobile than other domain walls, while, under high voltages, tail-to-tail domain walls become rather active and possess relatively long average lengths. This is due to the high nucleation energy and relatively low growth energy for charged domain walls. Finally, we demonstrate the manipulation of domain walls through successive electric writings, resulting in well-aligned conduction paths as designed, paving the way for their application in advanced spintronic, memory and communication nano-devices.},
doi = {10.1093/nsr/nwz176},
journal = {National Science Review},
number = 2,
volume = 7,
place = {United States},
year = {2019},
month = {11}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1093/nsr/nwz176

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Cited by: 15 works
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