Dynamics and manipulation of ferroelectric domain walls in bismuth ferrite thin films
Abstract
Abstract Ferroelectric domain walls differ from domains not only in their crystalline and discrete symmetry, but also in their electronic, magnetic, and mechanical properties. Although domain walls provide a degree of freedom to regulate the physical properties at the nanoscale, the relatively lower controllability prevents their practical applications in nano-devices. In this work, with the advantages of 3D domain configuration detection based on piezoresponse force microscopy, we find that the mobility of three types of domain walls (tail-to-tail, head-to-tail, head-to-head) in (001) BiFeO3 films varies with the applied electrical field. Under low voltages, head-to-tail domain walls are more mobile than other domain walls, while, under high voltages, tail-to-tail domain walls become rather active and possess relatively long average lengths. This is due to the high nucleation energy and relatively low growth energy for charged domain walls. Finally, we demonstrate the manipulation of domain walls through successive electric writings, resulting in well-aligned conduction paths as designed, paving the way for their application in advanced spintronic, memory and communication nano-devices.
- Authors:
-
[1];
[4];
- National Laboratory of Solid State Microstructures and Physics School, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures and Physics School, Nanjing University, Nanjing 210093, China, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USA
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China, Department of Mechanical Engineering, University of Washington, Seattle, WA 98195, USA
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1604835
- Grant/Contract Number:
- FG02-07ER46382
- Resource Type:
- Published Article
- Journal Name:
- National Science Review
- Additional Journal Information:
- Journal Name: National Science Review Journal Volume: 7 Journal Issue: 2; Journal ID: ISSN 2095-5138
- Publisher:
- Oxford University Press
- Country of Publication:
- China
- Language:
- English
Citation Formats
Xiao, Shuyu, Jin, Yaming, Lu, Xiaomei, Cheong, Sang-Wook, Li, Jiangyu, Li, Yang, Huang, Fengzhen, and Zhu, Jinsong. Dynamics and manipulation of ferroelectric domain walls in bismuth ferrite thin films. China: N. p., 2019.
Web. doi:10.1093/nsr/nwz176.
Xiao, Shuyu, Jin, Yaming, Lu, Xiaomei, Cheong, Sang-Wook, Li, Jiangyu, Li, Yang, Huang, Fengzhen, & Zhu, Jinsong. Dynamics and manipulation of ferroelectric domain walls in bismuth ferrite thin films. China. doi:https://doi.org/10.1093/nsr/nwz176
Xiao, Shuyu, Jin, Yaming, Lu, Xiaomei, Cheong, Sang-Wook, Li, Jiangyu, Li, Yang, Huang, Fengzhen, and Zhu, Jinsong. Fri .
"Dynamics and manipulation of ferroelectric domain walls in bismuth ferrite thin films". China. doi:https://doi.org/10.1093/nsr/nwz176.
@article{osti_1604835,
title = {Dynamics and manipulation of ferroelectric domain walls in bismuth ferrite thin films},
author = {Xiao, Shuyu and Jin, Yaming and Lu, Xiaomei and Cheong, Sang-Wook and Li, Jiangyu and Li, Yang and Huang, Fengzhen and Zhu, Jinsong},
abstractNote = {Abstract Ferroelectric domain walls differ from domains not only in their crystalline and discrete symmetry, but also in their electronic, magnetic, and mechanical properties. Although domain walls provide a degree of freedom to regulate the physical properties at the nanoscale, the relatively lower controllability prevents their practical applications in nano-devices. In this work, with the advantages of 3D domain configuration detection based on piezoresponse force microscopy, we find that the mobility of three types of domain walls (tail-to-tail, head-to-tail, head-to-head) in (001) BiFeO3 films varies with the applied electrical field. Under low voltages, head-to-tail domain walls are more mobile than other domain walls, while, under high voltages, tail-to-tail domain walls become rather active and possess relatively long average lengths. This is due to the high nucleation energy and relatively low growth energy for charged domain walls. Finally, we demonstrate the manipulation of domain walls through successive electric writings, resulting in well-aligned conduction paths as designed, paving the way for their application in advanced spintronic, memory and communication nano-devices.},
doi = {10.1093/nsr/nwz176},
journal = {National Science Review},
number = 2,
volume = 7,
place = {China},
year = {2019},
month = {11}
}
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DOI: https://doi.org/10.1093/nsr/nwz176
DOI: https://doi.org/10.1093/nsr/nwz176
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Works referenced in this record:
Domain wall dynamics in ferroelectric/ferroelastic molybdates
journal, March 1975
- Flippen, R. B.
- Journal of Applied Physics, Vol. 46, Issue 3
Manipulation of Conductive Domain Walls in Confined Ferroelectric Nanoislands
journal, May 2019
- Tian, Guo; Yang, Wenda; Song, Xiao
- Advanced Functional Materials, Vol. 29, Issue 32
Intrinsic defects in multiferroic BiFeO and their effect on magnetism
journal, March 2012
- Paudel, Tula R.; Jaswal, Sitaram S.; Tsymbal, Evgeny Y.
- Physical Review B, Vol. 85, Issue 10
Reliable polarization switching of BiFeO 3
journal, October 2012
- Baek, S. H.; Eom, C. B.
- Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, Vol. 370, Issue 1977
Ferroelectric charged domain walls in an applied electric field
journal, September 2012
- Gureev, M. Y.; Mokrý, P.; Tagantsev, A. K.
- Physical Review B, Vol. 86, Issue 10
Conducting Domain Walls in Lithium Niobate Single Crystals
journal, May 2012
- Schröder, Mathias; Haußmann, Alexander; Thiessen, Andreas
- Advanced Functional Materials, Vol. 22, Issue 18
Vector Piezoresponse Force Microscopy
journal, May 2006
- Kalinin, Sergei V.; Rodriguez, Brian J.; Jesse, Stephen
- Microscopy and Microanalysis, Vol. 12, Issue 03
Direct visualization of magnetoelectric domains
journal, December 2013
- Geng, Yanan; Das, Hena; Wysocki, Aleksander L.
- Nature Materials, Vol. 13, Issue 2
Polarization charge as a reconfigurable quasi-dopant in ferroelectric thin films
journal, June 2015
- Crassous, Arnaud; Sluka, Tomas; Tagantsev, Alexander K.
- Nature Nanotechnology, Vol. 10, Issue 7
Ferroelastic switching for nanoscale non-volatile magnetoelectric devices
journal, February 2010
- Baek, S. H.; Jang, H. W.; Folkman, C. M.
- Nature Materials, Vol. 9, Issue 4
Growth dynamics of ferroelectric domains in chiral hexatic liquid crystals
journal, November 2001
- Dierking, I.; Ghosh, A. K.; Haase, W.
- Journal of Physics: Condensed Matter, Vol. 13, Issue 46
Domain wall dynamics in ultrathin Pt/Co/AlOx microstrips under large combined magnetic fields
journal, January 2016
- Jué, E.; Thiaville, A.; Pizzini, S.
- Physical Review B, Vol. 93, Issue 1
Pinning of a ferroelectric Bloch wall at a paraelectric layer
journal, January 2018
- Stepkova, Vilgelmina; Hlinka, Jiří
- Beilstein Journal of Nanotechnology, Vol. 9
Enhancing the Domain Wall Conductivity in Lithium Niobate Single Crystals
journal, April 2017
- Godau, Christian; Kämpfe, Thomas; Thiessen, Andreas
- ACS Nano, Vol. 11, Issue 5
Domain wall Dynamics, Memory, and Phase Transitions in Cobalt-Bromine and Cobalt-Chlorine Boracites
journal, March 2010
- Moctezuma, R. E.; Carrillo, J. L.; Mendoza, M. E.
- Integrated Ferroelectrics, Vol. 111, Issue 1
Studying the Polarization Switching in Polycrystalline BiFeO3 Films by 2D Piezoresponse Force Microscopy
journal, July 2015
- Jin, Yaming; Lu, Xiaomei; Zhang, Junting
- Scientific Reports, Vol. 5, Issue 1
Domain Walls Creep in Thin Ferroelectric Films
journal, February 2015
- Sidorkin, A. S.; Nesterenko, L. P.; Pakhomov, A. Yu.
- Ferroelectrics, Vol. 476, Issue 1
Domain wall conductivity in semiconducting hexagonal ferroelectric TbMnO 3 thin films
journal, March 2016
- Kim, D. J.; Connell, J. G.; Seo, S. S. A.
- Nanotechnology, Vol. 27, Issue 15
Conduction at domain walls in oxide multiferroics
journal, January 2009
- Seidel, J.; Martin, L. W.; He, Q.
- Nature Materials, Vol. 8, Issue 3
Domain wall dynamics in easy-cone magnets
journal, January 2019
- Jang, Peong-Hwa; Oh, Se-Hyeok; Kim, Se Kwon
- Physical Review B, Vol. 99, Issue 2
First-principles studies of the effect of oxygen vacancies on the electronic structure and linear optical response of multiferroic BiFeO3
journal, December 2009
- Ju, Sheng; Cai, Tian-Yi
- Applied Physics Letters, Vol. 95, Issue 23
Functional domain walls in multiferroics
journal, November 2015
- Meier, Dennis
- Journal of Physics: Condensed Matter, Vol. 27, Issue 46
Insulating interlocked ferroelectric and structural antiphase domain walls in multiferroic YMnO3
journal, February 2010
- Choi, T.; Horibe, Y.; Yi, H. T.
- Nature Materials, Vol. 9, Issue 3
Anisotropic conductance at improper ferroelectric domain walls
journal, February 2012
- Meier, D.; Seidel, J.; Cano, A.
- Nature Materials, Vol. 11, Issue 4
Domain-wall conduction in ferroelectric BiFeO3 controlled by accumulation of charged defects
journal, November 2016
- Rojac, Tadej; Bencan, Andreja; Drazic, Goran
- Nature Materials, Vol. 16, Issue 3
Selective control of multiple ferroelectric switching pathways using a trailing flexoelectric field
journal, March 2018
- Park, Sung Min; Wang, Bo; Das, Saikat
- Nature Nanotechnology, Vol. 13, Issue 5
Functional electronic inversion layers at ferroelectric domain walls
journal, March 2017
- Mundy, J. A.; Schaab, J.; Kumagai, Y.
- Nature Materials, Vol. 16, Issue 6
Domain Wall Creep in Epitaxial Ferroelectric Thin Films
journal, August 2002
- Tybell, T.; Paruch, P.; Giamarchi, T.
- Physical Review Letters, Vol. 89, Issue 9
Conductive tail-to-tail domain walls in epitaxial BiFeO 3 films
journal, August 2018
- Jin, Yaming; Xiao, Shuyu; Yang, Jan-Chi
- Applied Physics Letters, Vol. 113, Issue 8
Current-driven and field-driven domain walls at nonzero temperature
journal, June 2009
- Lucassen, M. E.; van Driel, H. J.; Smith, C. Morais
- Physical Review B, Vol. 79, Issue 22
Current-driven vortex domain wall dynamics by micromagnetic simulations
journal, May 2006
- He, J.; Li, Z.; Zhang, S.
- Physical Review B, Vol. 73, Issue 18
Lattice-Scale Domain Wall Dynamics in Ferroelectrics
journal, November 2003
- Ma, Hongzhou; Kim, Won-Jeong; Horwitz, James S.
- Physical Review Letters, Vol. 91, Issue 21
Domain wall nanoelectronics
journal, February 2012
- Catalan, G.; Seidel, J.; Ramesh, R.
- Reviews of Modern Physics, Vol. 84, Issue 1
Ferroelectric 180° Domain Wall Motion Controlled by Biaxial Strain
journal, January 2015
- Guo, Er-Jia; Roth, Robert; Herklotz, Andreas
- Advanced Materials, Vol. 27, Issue 9
Motion of a magnetic domain wall traversed by fast‐rising current pulses
journal, March 1992
- Berger, L.
- Journal of Applied Physics, Vol. 71, Issue 6
Dynamics of two interacting 180° domain walls of different polarity in a uniaxial ferromagnet
journal, June 2009
- Shamsutdinov, M. A.; Nazarov, V. N.
- The Physics of Metals and Metallography, Vol. 107, Issue 6
Deterministic control of ferroelastic switching in multiferroic materials
journal, October 2009
- Balke, N.; Choudhury, S.; Jesse, S.
- Nature Nanotechnology, Vol. 4, Issue 12, p. 868-875
In Situ 3D Observation of the Domain Wall Dynamics in a Triglycine Sulfate Single Crystal upon Ferroelectric Phase Transition
journal, October 2017
- Wehmeier, Lukas; Kämpfe, Thomas; Haußmann, Alexander
- physica status solidi (RRL) - Rapid Research Letters, Vol. 11, Issue 11
Rewritable ferroelectric vortex pairs in BiFeO3
journal, August 2017
- Li, Yang; Jin, Yaming; Lu, Xiaomei
- npj Quantum Materials, Vol. 2, Issue 1
Dipole-Tunneling Model from Asymmetric Domain-Wall Conductivity in Single Crystals
journal, September 2018
- Xiao, S. Y.; Kämpfe, T.; Jin, Y. M.
- Physical Review Applied, Vol. 10, Issue 3
Velocity of domain-wall motion during polarization reversal in ferroelectric thin films: Beyond Merz's Law
journal, February 2015
- Meng, Qingping; Han, Myung-Geun; Tao, Jing
- Physical Review B, Vol. 91, Issue 5
Domain Wall Dynamics Near the Phase Transition in PZN-9%PT
journal, January 2011
- Reyes, J. A.; Mendoza, M. E.; Carrillo, J. L.
- Integrated Ferroelectrics, Vol. 126, Issue 1
Stable charged antiparallel domain walls in hyperferroelectrics
journal, May 2017
- Liu, S.; Cohen, R. E.
- Journal of Physics: Condensed Matter, Vol. 29, Issue 24
Polarization switching in epitaxial BiFeO3 films
journal, December 2005
- Zavaliche, F.; Shafer, P.; Ramesh, R.
- Applied Physics Letters, Vol. 87, Issue 25