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Title: Measuring the impact ionization and charge trapping probabilities in SuperCDMS HVeV phonon sensing detectors

Abstract

A 0.93 g 1×1×0.4 cm3 SuperCDMS silicon HVeV detector operated at 30 mK was illuminated by 1.91 eV photons using a room temperature pulsed laser coupled to the cryostat via fiber optic. In this work, the detector’s response under a variety of specific operating conditions was used to study the detector leakage current, charge trapping, and impact ionization in the high-purity Si substrate. The measured probabilities for a charge carrier in the detector to undergo charge trapping (0.713±0.093%) or cause impact ionization (1.576±0.110%) were found to be nearly independent of bias polarity and charge-carrier type (electron or hole) for substrate biases of ±140 V.

Authors:
ORCiD logo [1];  [1]; ORCiD logo [1];  [2];  [2];  [2];  [2];  [2];  [2];  [3];  [3]; ORCiD logo [3];  [4];  [5]; ORCiD logo [6]
  1. Stanford Univ., CA (United States). Dept. of Physics
  2. Univ. of California, Berkeley, CA (United States). Dept. of Physics
  3. SLAC National Accelerator Lab., Menlo Park, CA (United States)
  4. SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., CA (United States). Dept. of Physics
  5. Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
  6. Santa Clara Univ., Santa Clara, CA (United States)
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States); Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), High Energy Physics (HEP); National Science Foundation (NSF)
OSTI Identifier:
1604762
Alternate Identifier(s):
OSTI ID: 1574976; OSTI ID: 1599668
Report Number(s):
arXiv:1910.02162; FERMILAB-PUB-19-556-AE
Journal ID: ISSN 2470-0010; PRVDAQ
Grant/Contract Number:  
AC02-07CH11359; AC02-76SF00515
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review D
Additional Journal Information:
Journal Volume: 101; Journal Issue: 3; Journal ID: ISSN 2470-0010
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY

Citation Formats

Ponce, F., Stanford, C., Yellin, S., Page, W., Fink, C., Pyle, M., Sadoulet, B., Serfass, B., Watkins, S. L., Brink, P. L., Cherry, M., Partridge, R., Cabrera, B., Kurinsky, N., and Young, B. A. Measuring the impact ionization and charge trapping probabilities in SuperCDMS HVeV phonon sensing detectors. United States: N. p., 2020. Web. doi:10.1103/physrevd.101.031101.
Ponce, F., Stanford, C., Yellin, S., Page, W., Fink, C., Pyle, M., Sadoulet, B., Serfass, B., Watkins, S. L., Brink, P. L., Cherry, M., Partridge, R., Cabrera, B., Kurinsky, N., & Young, B. A. Measuring the impact ionization and charge trapping probabilities in SuperCDMS HVeV phonon sensing detectors. United States. doi:https://doi.org/10.1103/physrevd.101.031101
Ponce, F., Stanford, C., Yellin, S., Page, W., Fink, C., Pyle, M., Sadoulet, B., Serfass, B., Watkins, S. L., Brink, P. L., Cherry, M., Partridge, R., Cabrera, B., Kurinsky, N., and Young, B. A. Thu . "Measuring the impact ionization and charge trapping probabilities in SuperCDMS HVeV phonon sensing detectors". United States. doi:https://doi.org/10.1103/physrevd.101.031101. https://www.osti.gov/servlets/purl/1604762.
@article{osti_1604762,
title = {Measuring the impact ionization and charge trapping probabilities in SuperCDMS HVeV phonon sensing detectors},
author = {Ponce, F. and Stanford, C. and Yellin, S. and Page, W. and Fink, C. and Pyle, M. and Sadoulet, B. and Serfass, B. and Watkins, S. L. and Brink, P. L. and Cherry, M. and Partridge, R. and Cabrera, B. and Kurinsky, N. and Young, B. A.},
abstractNote = {A 0.93 g 1×1×0.4 cm3 SuperCDMS silicon HVeV detector operated at 30 mK was illuminated by 1.91 eV photons using a room temperature pulsed laser coupled to the cryostat via fiber optic. In this work, the detector’s response under a variety of specific operating conditions was used to study the detector leakage current, charge trapping, and impact ionization in the high-purity Si substrate. The measured probabilities for a charge carrier in the detector to undergo charge trapping (0.713±0.093%) or cause impact ionization (1.576±0.110%) were found to be nearly independent of bias polarity and charge-carrier type (electron or hole) for substrate biases of ±140 V.},
doi = {10.1103/physrevd.101.031101},
journal = {Physical Review D},
number = 3,
volume = 101,
place = {United States},
year = {2020},
month = {2}
}

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Works referenced in this record:

Voltage‐assisted calorimetric ionization detector
journal, December 1988

  • Luke, P. N.
  • Journal of Applied Physics, Vol. 64, Issue 12
  • DOI: 10.1063/1.341976

Thermal detection of single e-h pairs in a biased silicon crystal detector
journal, January 2018

  • Romani, R. K.; Brink, P. L.; Cabrera, B.
  • Applied Physics Letters, Vol. 112, Issue 4
  • DOI: 10.1063/1.5010699

Single-Electron and Single-Photon Sensitivity with a Silicon Skipper CCD
journal, September 2017


Dark light, dark matter, and the misalignment mechanism
journal, November 2011


Searching for ϵ charges and a new U(1)
journal, September 1986


Direct detection of sub-GeV dark matter
journal, April 2012


First Dark Matter Constraints from a SuperCDMS Single-Charge Sensitive Detector
journal, August 2018


Modeling of Impact Ionization and Charge Trapping in SuperCDMS HVeV Detectors
journal, February 2020